Overview
The 1N5711W-7-F, produced by Diodes Incorporated, is a surface mount Schottky barrier diode designed for various high-frequency and low-voltage applications. This diode is known for its low forward voltage drop, fast switching time, and low reverse capacitance, making it ideal for use in high-level UHF/VHF detection and pulse applications. The device is packaged in a SOD123 surface mount package, which is suitable for automated insertion and is fully RoHS compliant, halogen-free, and antimony-free.
Key Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 70 | V | @TA = +25°C |
| Working Peak Reverse Voltage | VRWM | 70 | V | @TA = +25°C |
| DC Blocking Voltage | VR | 70 | V | @TA = +25°C |
| RMS Reverse Voltage | VR(RMS) | 49 | V | @TA = +25°C |
| Maximum Forward Current | IFM | 15 | mA | @TA = +25°C |
| Power Dissipation | PD | 333 | mW | @TA = +25°C |
| Thermal Resistance, Junction to Ambient Air | RθJA | 300 | °C/W | @TA = +25°C |
| Operating Temperature Range | TJ | -55 to +125 | °C | |
| Storage Temperature Range | TSTG | -55 to +150 | °C | |
| Forward Voltage Drop | VF | 0.41 to 1.00 | V | IF = 1.0mA to 15mA |
| Reverse Leakage Current | IR | ≤ 200 nA | VR = 50V | |
| Total Capacitance | CT | ≤ 2.0 pF | VR = 0V, f = 1.0MHz | |
| Reverse Recovery Time | trr | ≤ 1.0 ns | IF = IR = 5.0mA, Irr = 0.1 x IR, RL = 100Ω |
Key Features
- Low Forward Voltage Drop: Ensures minimal voltage loss during operation.
- Guard Ring Construction for Transient Protection: Provides enhanced protection against transient voltages.
- Fast Switching Time: Ideal for high-frequency applications.
- Low Reverse Capacitance: Minimizes capacitance effects in high-frequency circuits.
- Surface Mount Package: Suitable for automated insertion and compact designs.
- Totally Lead-Free & Fully RoHS Compliant: Meets environmental regulations and is halogen and antimony free.
Applications
- High-Level UHF/VHF Detection: Suitable for radio frequency detection applications.
- Pulse Applications: Ideal for high-speed switching and pulse circuits.
- Automotive Applications: Qualified to AEC-Q100/101/104/200 standards and manufactured in IATF 16949 certified facilities.
- General Electronic Circuits: Can be used in various low-voltage, high-frequency electronic circuits.
Q & A
- What is the peak repetitive reverse voltage of the 1N5711W-7-F diode?
The peak repetitive reverse voltage (VRRM) is 70V.
- What is the maximum forward current rating of the 1N5711W-7-F diode?
The maximum forward current (IFM) is 15mA.
- What is the typical forward voltage drop of the 1N5711W-7-F diode?
The typical forward voltage drop (VF) ranges from 0.41V to 1.00V for currents from 1.0mA to 15mA.
- Is the 1N5711W-7-F diode RoHS compliant?
Yes, the 1N5711W-7-F diode is fully RoHS compliant, halogen-free, and antimony-free.
- What is the operating temperature range of the 1N5711W-7-F diode?
The operating temperature range is -55°C to +125°C.
- What is the storage temperature range of the 1N5711W-7-F diode?
The storage temperature range is -55°C to +150°C.
- What is the thermal resistance of the 1N5711W-7-F diode?
The thermal resistance (RθJA) is 300°C/W.
- What is the package type of the 1N5711W-7-F diode?
The diode is packaged in a SOD123 surface mount package.
- Is the 1N5711W-7-F diode suitable for automotive applications?
Yes, it is qualified to AEC-Q100/101/104/200 standards and manufactured in IATF 16949 certified facilities.
- What are the key applications of the 1N5711W-7-F diode?
It is primarily used in high-level UHF/VHF detection, pulse applications, and various low-voltage, high-frequency electronic circuits.
