Overview
The 1N5711#T25, produced by Broadcom Limited, is a small signal Schottky diode designed for high-frequency applications. This diode features a patented 'guard ring' design, which enhances its breakdown voltage and overall performance. It is part of the 1N5711 series, known for its high breakdown voltage, low turn-on voltage, and ultrafast switching capabilities. The 1N5711#T25 is packaged in a DO-35 (DO-204AH) axial leaded package, making it suitable for a variety of electronic circuits requiring high reliability and efficiency.
Key Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | - | - | - | 70 | V |
| Forward Continuous Current | IF | Ta = 25°C | - | - | 15 | mA |
| Power Dissipation | Ptot | Ta = 25°C | - | - | 430 | mW |
| Breakdown Voltage | VBR | Tamb = 25°C, IR = 10µA | - | - | 70 | V |
| Forward Voltage | VF | Tamb = 25°C, IF = 1mA | - | 0.41 | 1 | V |
| Reverse Leakage Current | IR | Tamb = 25°C, VR = 50V | - | - | 0.2 | µA |
| Capacitance | C | Tamb = 25°C, VR = 0V, f = 1MHz | - | - | 2 | pF |
| Storage and Junction Temperature Range | Tstg, Tj | - | -65 to 200 | -65 to 200 | - | °C |
| Maximum Lead Temperature for Soldering | TL | During 10s at 4mm from Case | - | - | 230 | °C |
Key Features
- High Breakdown Voltage: The 1N5711#T25 has a repetitive peak reverse voltage (VRRM) of 70V, ensuring robust performance in high-voltage applications.
- Low Turn-On Voltage: With a forward voltage (VF) as low as 0.41V at 1mA, this diode minimizes power loss and enhances efficiency.
- Ultrafast Switching: The diode features ultrafast switching capabilities, making it ideal for high-frequency and pulse applications.
- Low Capacitance: The capacitance (C) is typically 2 pF at 1 MHz, which is beneficial for high-frequency circuits.
- High Reliability: Packaged in a DO-35 axial leaded package, it offers high reliability and ease of use in various electronic circuits.
Applications
- UHF/VHF Detection: The 1N5711#T25 is primarily intended for high-level UHF/VHF detection due to its high breakdown voltage and low turn-on voltage.
- Pulse Applications: Its ultrafast switching capabilities make it suitable for pulse applications with a broad dynamic range.
- RF Circuits: It is used in various RF circuits where high-frequency performance and low power loss are critical.
- General Purpose Diode Applications: It can be used in general-purpose diode applications requiring high reliability and efficiency.
Q & A
- What is the repetitive peak reverse voltage (VRRM) of the 1N5711#T25?
The VRRM of the 1N5711#T25 is 70V.
- What is the forward continuous current (IF) of the 1N5711#T25 at 25°C?
The forward continuous current (IF) is 15 mA at 25°C.
- What is the power dissipation (Ptot) of the 1N5711#T25 at 25°C?
The power dissipation (Ptot) is 430 mW at 25°C.
- What is the typical forward voltage (VF) of the 1N5711#T25 at 1 mA?
The typical forward voltage (VF) is 0.41 V at 1 mA.
- What is the reverse leakage current (IR) of the 1N5711#T25 at 50V and 25°C?
The reverse leakage current (IR) is 0.2 µA at 50V and 25°C.
- What is the capacitance (C) of the 1N5711#T25 at 1 MHz and 0V?
The capacitance (C) is typically 2 pF at 1 MHz and 0V.
- What is the storage and junction temperature range for the 1N5711#T25?
The storage and junction temperature range is -65°C to 200°C.
- What is the maximum lead temperature for soldering the 1N5711#T25?
The maximum lead temperature for soldering is 230°C during 10 seconds at 4mm from the case.
- In what type of package is the 1N5711#T25 available?
The 1N5711#T25 is available in a DO-35 (DO-204AH) axial leaded package.
- What are the primary applications of the 1N5711#T25?
The primary applications include UHF/VHF detection, pulse applications, and general-purpose diode uses in RF circuits.
