BCP5610TA
  • Share:

Diodes Incorporated BCP5610TA

Manufacturer No:
BCP5610TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5610TA is a medium power NPN silicon planar transistor manufactured by Diodes Incorporated. This transistor is housed in the SOT223 package and is designed for medium power switching or amplification applications. It is part of the BCP54/55/56 series, which offers various voltage and current ratings, making it versatile for different use cases.

The BCP5610TA is notable for its high continuous collector current of 1A, peak pulse current of 2A, and power dissipation of 2W. It also features low saturation voltage and is fully RoHS compliant, making it suitable for a wide range of electronic systems, including automotive applications.

Key Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 45 - - V IC = 100µA
Collector-Emitter Breakdown Voltage BVCEO 45 - - V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 5 - - V IE = 10µA
Collector Cut-Off Current ICBO - - 0.1 µA VCB = 30V
Emitter Cut-Off Current IEBO - - 20 nA VEB = 4V
DC Current Gain hFE 25 40 160 - IC = 150mA, VCE = 2V (Gain Group 10)
Collector-Emitter Saturation Voltage VCE(sat) - - 0.5 V IC = 500mA, IB = 50mA
Base-Emitter Turn-On Voltage VBE(on) - - 1.0 V IC = 500mA, VCE = 2V
Transition Frequency fT 150 - - MHz IC = 50mA, VCE = 10V, f = 100MHz
Output Capacitance Cobo - - 25 pF VCB = 10V, f = 1MHz
Continuous Collector Current IC - - 1 A -
Peak Pulse Current ICM - - 2 A -
Power Dissipation Pd - - 2 W -

Key Features

  • High Continuous Collector Current: Up to 1A.
  • Peak Pulse Current: Up to 2A.
  • Power Dissipation: 2W.
  • Low Saturation Voltage: VCE(sat) < 500mV @ 0.5A.
  • Gain Groups: Available in gain groups 10 and 16.
  • Complementary PNP Types: BCP51, 52, and 53.
  • Environmental Compliance: Totally lead-free, fully RoHS compliant, halogen- and antimony-free.
  • Packaging: SOT223 case with molded plastic, UL flammability rating 94V-0.
  • Terminals: Matte tin plated leads, solderable per MIL-STD-202, Method 208.

Applications

  • Medium Power Switching or Amplification: Suitable for medium power switching and amplification applications.
  • AF Driver and Output Stages: Used in audio frequency driver and output stages.
  • Automotive Applications: Qualified to AEC-Q100/101/200 standards, PPAP capable, and manufactured in IATF 16949 certified facilities.

Q & A

  1. What is the continuous collector current of the BCP5610TA transistor?

    The continuous collector current of the BCP5610TA transistor is up to 1A.

  2. What is the peak pulse current rating of the BCP5610TA?

    The peak pulse current rating of the BCP5610TA is up to 2A.

  3. What is the power dissipation of the BCP5610TA transistor?

    The power dissipation of the BCP5610TA transistor is 2W.

  4. What is the collector-emitter saturation voltage of the BCP5610TA?

    The collector-emitter saturation voltage (VCE(sat)) of the BCP5610TA is less than 500mV at 0.5A.

  5. Is the BCP5610TA RoHS compliant?

    Yes, the BCP5610TA is fully RoHS compliant and lead-free.

  6. What is the packaging type of the BCP5610TA transistor?

    The BCP5610TA transistor is packaged in a SOT223 case.

  7. What are the typical applications of the BCP5610TA transistor?

    The BCP5610TA transistor is typically used in medium power switching or amplification applications and in audio frequency driver and output stages.

  8. Is the BCP5610TA suitable for automotive applications?

    Yes, the BCP5610TA is qualified to AEC-Q100/101/200 standards and is PPAP capable, making it suitable for automotive applications.

  9. What is the transition frequency of the BCP5610TA transistor?

    The transition frequency (fT) of the BCP5610TA transistor is 150 MHz.

  10. What is the output capacitance of the BCP5610TA transistor?

    The output capacitance (Cobo) of the BCP5610TA transistor is up to 25 pF.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
0 Remaining View Similar

In Stock

$0.42
2,228

Please send RFQ , we will respond immediately.

Same Series
BCP5516TA
BCP5516TA
TRANS NPN 60V 1A SOT223-3
BCP5416TA
BCP5416TA
TRANS NPN 45V 1A SOT223-3
BCP5410TA
BCP5410TA
TRANS NPN 45V 1A SOT223-3
BCP5510TA
BCP5510TA
TRANS NPN 60V 1A SOT223

Similar Products

Part Number BCP5610TA BCP5616TA BCP5310TA BCP5410TA BCP5510TA BCP5610QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active
Transistor Type NPN NPN PNP NPN - NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A - 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 45 V - 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA - 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V - 63 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W - 2 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz - 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) - -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA - TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 - SOT-223-3

Related Product By Categories

PMBTA06,235
PMBTA06,235
Nexperia USA Inc.
TRANS NPN 80V 0.5A TO236AB
BC817-16LT1G
BC817-16LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
PBHV9040T,215
PBHV9040T,215
Nexperia USA Inc.
TRANS PNP 400V 0.25A TO236AB
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
TIP147G
TIP147G
onsemi
TRANS PNP DARL 100V 10A TO247-3
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
BCP56H115
BCP56H115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCV46QTA
BCV46QTA
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23

Related Product By Brand

BAW56Q-7-F
BAW56Q-7-F
Diodes Incorporated
DIODE SW DL 75V 150MA SOT23
BAS40V-7
BAS40V-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT563
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
BAS16-7-G
BAS16-7-G
Diodes Incorporated
DIODE GEN PURP SOT23-3
BZX84C39S-7
BZX84C39S-7
Diodes Incorporated
DIODE ZENER ARRAY 39V SOT363
BZX84C3V6-7-F
BZX84C3V6-7-F
Diodes Incorporated
DIODE ZENER 3.6V 300MW SOT23-3
BZX84C33T-7-F
BZX84C33T-7-F
Diodes Incorporated
DIODE ZENER 33V 150MW SOT523
BZX84C9V1W-7
BZX84C9V1W-7
Diodes Incorporated
DIODE ZENER 9.1V 200MW SOT323
BZX84C3V0-7-G
BZX84C3V0-7-G
Diodes Incorporated
DIODE ZENER
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
BSS84TA
BSS84TA
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
2N7002W-7-F-79
2N7002W-7-F-79
Diodes Incorporated
DIODE