BCP5610TA
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Diodes Incorporated BCP5610TA

Manufacturer No:
BCP5610TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5610TA is a medium power NPN silicon planar transistor manufactured by Diodes Incorporated. This transistor is housed in the SOT223 package and is designed for medium power switching or amplification applications. It is part of the BCP54/55/56 series, which offers various voltage and current ratings, making it versatile for different use cases.

The BCP5610TA is notable for its high continuous collector current of 1A, peak pulse current of 2A, and power dissipation of 2W. It also features low saturation voltage and is fully RoHS compliant, making it suitable for a wide range of electronic systems, including automotive applications.

Key Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 45 - - V IC = 100µA
Collector-Emitter Breakdown Voltage BVCEO 45 - - V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 5 - - V IE = 10µA
Collector Cut-Off Current ICBO - - 0.1 µA VCB = 30V
Emitter Cut-Off Current IEBO - - 20 nA VEB = 4V
DC Current Gain hFE 25 40 160 - IC = 150mA, VCE = 2V (Gain Group 10)
Collector-Emitter Saturation Voltage VCE(sat) - - 0.5 V IC = 500mA, IB = 50mA
Base-Emitter Turn-On Voltage VBE(on) - - 1.0 V IC = 500mA, VCE = 2V
Transition Frequency fT 150 - - MHz IC = 50mA, VCE = 10V, f = 100MHz
Output Capacitance Cobo - - 25 pF VCB = 10V, f = 1MHz
Continuous Collector Current IC - - 1 A -
Peak Pulse Current ICM - - 2 A -
Power Dissipation Pd - - 2 W -

Key Features

  • High Continuous Collector Current: Up to 1A.
  • Peak Pulse Current: Up to 2A.
  • Power Dissipation: 2W.
  • Low Saturation Voltage: VCE(sat) < 500mV @ 0.5A.
  • Gain Groups: Available in gain groups 10 and 16.
  • Complementary PNP Types: BCP51, 52, and 53.
  • Environmental Compliance: Totally lead-free, fully RoHS compliant, halogen- and antimony-free.
  • Packaging: SOT223 case with molded plastic, UL flammability rating 94V-0.
  • Terminals: Matte tin plated leads, solderable per MIL-STD-202, Method 208.

Applications

  • Medium Power Switching or Amplification: Suitable for medium power switching and amplification applications.
  • AF Driver and Output Stages: Used in audio frequency driver and output stages.
  • Automotive Applications: Qualified to AEC-Q100/101/200 standards, PPAP capable, and manufactured in IATF 16949 certified facilities.

Q & A

  1. What is the continuous collector current of the BCP5610TA transistor?

    The continuous collector current of the BCP5610TA transistor is up to 1A.

  2. What is the peak pulse current rating of the BCP5610TA?

    The peak pulse current rating of the BCP5610TA is up to 2A.

  3. What is the power dissipation of the BCP5610TA transistor?

    The power dissipation of the BCP5610TA transistor is 2W.

  4. What is the collector-emitter saturation voltage of the BCP5610TA?

    The collector-emitter saturation voltage (VCE(sat)) of the BCP5610TA is less than 500mV at 0.5A.

  5. Is the BCP5610TA RoHS compliant?

    Yes, the BCP5610TA is fully RoHS compliant and lead-free.

  6. What is the packaging type of the BCP5610TA transistor?

    The BCP5610TA transistor is packaged in a SOT223 case.

  7. What are the typical applications of the BCP5610TA transistor?

    The BCP5610TA transistor is typically used in medium power switching or amplification applications and in audio frequency driver and output stages.

  8. Is the BCP5610TA suitable for automotive applications?

    Yes, the BCP5610TA is qualified to AEC-Q100/101/200 standards and is PPAP capable, making it suitable for automotive applications.

  9. What is the transition frequency of the BCP5610TA transistor?

    The transition frequency (fT) of the BCP5610TA transistor is 150 MHz.

  10. What is the output capacitance of the BCP5610TA transistor?

    The output capacitance (Cobo) of the BCP5610TA transistor is up to 25 pF.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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Similar Products

Part Number BCP5610TA BCP5616TA BCP5310TA BCP5410TA BCP5510TA BCP5610QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active
Transistor Type NPN NPN PNP NPN - NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A - 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 45 V - 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA - 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V - 63 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W - 2 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz - 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) - -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA - TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 - SOT-223-3

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