BCP5610TA
  • Share:

Diodes Incorporated BCP5610TA

Manufacturer No:
BCP5610TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5610TA is a medium power NPN silicon planar transistor manufactured by Diodes Incorporated. This transistor is housed in the SOT223 package and is designed for medium power switching or amplification applications. It is part of the BCP54/55/56 series, which offers various voltage and current ratings, making it versatile for different use cases.

The BCP5610TA is notable for its high continuous collector current of 1A, peak pulse current of 2A, and power dissipation of 2W. It also features low saturation voltage and is fully RoHS compliant, making it suitable for a wide range of electronic systems, including automotive applications.

Key Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 45 - - V IC = 100µA
Collector-Emitter Breakdown Voltage BVCEO 45 - - V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 5 - - V IE = 10µA
Collector Cut-Off Current ICBO - - 0.1 µA VCB = 30V
Emitter Cut-Off Current IEBO - - 20 nA VEB = 4V
DC Current Gain hFE 25 40 160 - IC = 150mA, VCE = 2V (Gain Group 10)
Collector-Emitter Saturation Voltage VCE(sat) - - 0.5 V IC = 500mA, IB = 50mA
Base-Emitter Turn-On Voltage VBE(on) - - 1.0 V IC = 500mA, VCE = 2V
Transition Frequency fT 150 - - MHz IC = 50mA, VCE = 10V, f = 100MHz
Output Capacitance Cobo - - 25 pF VCB = 10V, f = 1MHz
Continuous Collector Current IC - - 1 A -
Peak Pulse Current ICM - - 2 A -
Power Dissipation Pd - - 2 W -

Key Features

  • High Continuous Collector Current: Up to 1A.
  • Peak Pulse Current: Up to 2A.
  • Power Dissipation: 2W.
  • Low Saturation Voltage: VCE(sat) < 500mV @ 0.5A.
  • Gain Groups: Available in gain groups 10 and 16.
  • Complementary PNP Types: BCP51, 52, and 53.
  • Environmental Compliance: Totally lead-free, fully RoHS compliant, halogen- and antimony-free.
  • Packaging: SOT223 case with molded plastic, UL flammability rating 94V-0.
  • Terminals: Matte tin plated leads, solderable per MIL-STD-202, Method 208.

Applications

  • Medium Power Switching or Amplification: Suitable for medium power switching and amplification applications.
  • AF Driver and Output Stages: Used in audio frequency driver and output stages.
  • Automotive Applications: Qualified to AEC-Q100/101/200 standards, PPAP capable, and manufactured in IATF 16949 certified facilities.

Q & A

  1. What is the continuous collector current of the BCP5610TA transistor?

    The continuous collector current of the BCP5610TA transistor is up to 1A.

  2. What is the peak pulse current rating of the BCP5610TA?

    The peak pulse current rating of the BCP5610TA is up to 2A.

  3. What is the power dissipation of the BCP5610TA transistor?

    The power dissipation of the BCP5610TA transistor is 2W.

  4. What is the collector-emitter saturation voltage of the BCP5610TA?

    The collector-emitter saturation voltage (VCE(sat)) of the BCP5610TA is less than 500mV at 0.5A.

  5. Is the BCP5610TA RoHS compliant?

    Yes, the BCP5610TA is fully RoHS compliant and lead-free.

  6. What is the packaging type of the BCP5610TA transistor?

    The BCP5610TA transistor is packaged in a SOT223 case.

  7. What are the typical applications of the BCP5610TA transistor?

    The BCP5610TA transistor is typically used in medium power switching or amplification applications and in audio frequency driver and output stages.

  8. Is the BCP5610TA suitable for automotive applications?

    Yes, the BCP5610TA is qualified to AEC-Q100/101/200 standards and is PPAP capable, making it suitable for automotive applications.

  9. What is the transition frequency of the BCP5610TA transistor?

    The transition frequency (fT) of the BCP5610TA transistor is 150 MHz.

  10. What is the output capacitance of the BCP5610TA transistor?

    The output capacitance (Cobo) of the BCP5610TA transistor is up to 25 pF.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
0 Remaining View Similar

In Stock

$0.42
2,228

Please send RFQ , we will respond immediately.

Same Series
BCP5610TA
BCP5610TA
TRANS NPN 80V 1A SOT223-3
BCP5416TA
BCP5416TA
TRANS NPN 45V 1A SOT223-3
BCP5410TA
BCP5410TA
TRANS NPN 45V 1A SOT223-3
BCP5510TA
BCP5510TA
TRANS NPN 60V 1A SOT223

Similar Products

Part Number BCP5610TA BCP5616TA BCP5310TA BCP5410TA BCP5510TA BCP5610QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active
Transistor Type NPN NPN PNP NPN - NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A - 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 45 V - 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA - 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V - 63 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W - 2 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz - 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) - -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA - TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 - SOT-223-3

Related Product By Categories

BC817-16LT1G
BC817-16LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
NSS20200LT1G
NSS20200LT1G
onsemi
TRANS PNP 20V 2A SOT23-3
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
BC846AQB-QZ
BC846AQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
SS8050-C-AP
SS8050-C-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92
BC857AQBAZ
BC857AQBAZ
Nexperia USA Inc.
BC857AQB/SOT8015/DFN1110D-3
BC857BW/SNX
BC857BW/SNX
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB

Related Product By Brand

BAS70-04Q-7-F
BAS70-04Q-7-F
Diodes Incorporated
DIODE SCHOTTKY 70V 70MA SOT23
BAT54C-7-G
BAT54C-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
1N4004G-T
1N4004G-T
Diodes Incorporated
DIODE GEN PURP 400V 1A DO41
MURS320-13-F
MURS320-13-F
Diodes Incorporated
DIODE GEN PURP 200V 3A SMC
BZX84C39TS-7-F
BZX84C39TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 39V SOT363
BZX84C3V0Q-13-F
BZX84C3V0Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZT52HC3V6WF-7
BZT52HC3V6WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BZT52HC18WFQ-7
BZT52HC18WFQ-7
Diodes Incorporated
DIODE ZENER 18V 375MW SOD123F
BZX84C9V1-7
BZX84C9V1-7
Diodes Incorporated
DIODE ZENER 9.1V 350MW SOT23-3
BC847BVNQ-7
BC847BVNQ-7
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT56
BFS17NQTA
BFS17NQTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23
BC857AT-7-F
BC857AT-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT523