BAV70HDWQ-13
  • Share:

Diodes Incorporated BAV70HDWQ-13

Manufacturer No:
BAV70HDWQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE FS 100V 125MA SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV70HDWQ-13 is a high-performance switching diode array produced by Diodes Incorporated. This component is part of a series designed for automotive applications, offering superior performance even in harsh environments. The BAV70HDWQ-13 is packaged in the compact SOT363 surface mount package, making it ideal for applications where space is limited. It features two BAV70 circuits in a common cathode configuration, providing low forward voltage, high reverse breakdown voltage, and super-fast switching speeds.

Key Specifications

Parameter Value Unit
Configuration Dual-Dual, Common Cathode
Maximum Forward Continuous Current (IFM) 125 mA
Peak Repetitive Reverse Voltage (VRRM) 100 V
Maximum Forward Voltage Drop (VF) 1.25 V @ 50mA
Maximum Reverse Current (IR) 0.5 µA @ 80V
Maximum Peak Forward Surge Current (IFSM) 4 A
Maximum Reverse Recovery Time (tRR) 4 ns
Total Capacitance (CT) 1.5 pF
Maximum Power Dissipation (PD) 350 mW

Key Features

  • Super-Fast Switching Speed: With a maximum reverse recovery time of 4ns, this diode array is suitable for high-frequency switching applications.
  • Low Forward Voltage: The BAV70HDWQ-13 has a low forward voltage drop of 1.25V at 50mA.
  • High Reverse Breakdown Voltage: It features a peak repetitive reverse voltage of 100V.
  • Low Leakage Current: The maximum reverse current is 0.5µA at 80V.
  • Compact Packaging: The SOT363 package ensures a small footprint, making it ideal for space-constrained designs.
  • Automotive Grade: Qualified to AEC-Q101 standards and supported by a PPAP, ensuring reliability in harsh automotive environments.

Applications

The BAV70HDWQ-13 is primarily targeted for the automotive industry due to its robust performance and compliance with automotive standards. It is suitable for various applications including:

  • General purpose switching
  • High-frequency switching applications
  • Automotive systems requiring high reliability and low leakage current

Q & A

  1. What is the configuration of the BAV70HDWQ-13 diode array?

    The BAV70HDWQ-13 is configured as a dual-dual common cathode diode array.

  2. What is the maximum forward continuous current of the BAV70HDWQ-13?

    The maximum forward continuous current is 125mA.

  3. What is the peak repetitive reverse voltage of the BAV70HDWQ-13?

    The peak repetitive reverse voltage is 100V.

  4. What is the maximum forward voltage drop of the BAV70HDWQ-13?

    The maximum forward voltage drop is 1.25V at 50mA.

  5. What is the reverse recovery time of the BAV70HDWQ-13?

    The maximum reverse recovery time is 4ns.

  6. Is the BAV70HDWQ-13 suitable for high-frequency applications?

    Yes, it is suitable for high-frequency switching applications due to its super-fast reverse recovery time.

  7. What is the packaging type of the BAV70HDWQ-13?

    The BAV70HDWQ-13 is packaged in the SOT363 surface mount package.

  8. Is the BAV70HDWQ-13 qualified for automotive use?

    Yes, it is qualified to AEC-Q101 standards and supported by a PPAP, making it suitable for automotive applications.

  9. What are the key applications of the BAV70HDWQ-13?

    The key applications include general purpose switching, high-frequency switching, and automotive systems requiring high reliability.

  10. What is the maximum power dissipation of the BAV70HDWQ-13?

    The maximum power dissipation is 350mW.

Product Attributes

Diode Configuration:2 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):125mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 50 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.39
125

Please send RFQ , we will respond immediately.

Related Product By Categories

BAT54S-AU_R1_000A1
BAT54S-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BAV99 RFG
BAV99 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
BAV99SH6327XTSA1
BAV99SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS40-06-E3-08
BAS40-06-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
STPS30L60CW
STPS30L60CW
STMicroelectronics
DIODE ARRAY SCHOTTKY 60V TO247-3
NRVHP620MFDT1G
NRVHP620MFDT1G
onsemi
DIODE ULT FAST 3A 200V SO8FL
BAV99BRW-TP
BAV99BRW-TP
Micro Commercial Co
DIODE ARRAY GP 75V 150MA SOT363
BAS40-04E6327
BAS40-04E6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
MURB1620CT-T-F
MURB1620CT-T-F
Diodes Incorporated
DIODE ARRAY GP 200V 16A D2PAK
BAW56SH6727XTSA1
BAW56SH6727XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS40-04/ZLVL
BAS40-04/ZLVL
NXP USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT23

Related Product By Brand

BAW56W-7-G
BAW56W-7-G
Diodes Incorporated
DIODE GEN PURPOSE
BAV21WQ-7-F
BAV21WQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
1N4007L-T
1N4007L-T
Diodes Incorporated
DIODE GEN PURP 1KV 1A DO41
BZX84C13-7-F
BZX84C13-7-F
Diodes Incorporated
DIODE ZENER 13V 300MW SOT23-3
BZX84C24-7
BZX84C24-7
Diodes Incorporated
DIODE ZENER 24V 300MW SOT23-3
BZX84C36-7
BZX84C36-7
Diodes Incorporated
DIODE ZENER 36V 300MW SOT23-3
BFS17HTA
BFS17HTA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
MMBTA63-7-F
MMBTA63-7-F
Diodes Incorporated
TRANS PNP DARL 30V 0.5A SOT23-3
BCV46TC
BCV46TC
Diodes Incorporated
TRANS PNP DARL 60V 0.5A SOT23-3
BSN20Q-7
BSN20Q-7
Diodes Incorporated
MOSFET N-CH 50V 500MA SOT23
74LVC1G07FW5-7
74LVC1G07FW5-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN
74HC164D14
74HC164D14
Diodes Incorporated
IC SHIFT REGISTER SER 14DIP