Overview
The BSS138K-13 is an N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This small signal MOSFET is designed for low power applications and is characterized by its low on-resistance, low input capacitance, and fast switching speed. It is packaged in a SOT23-3 surface mount package, making it suitable for compact and efficient circuit designs. The device is fully RoHS compliant, lead-free, and halogen and antimony free, aligning with environmental and regulatory standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | 50 | V |
| Gate-Source Voltage | VGSS | ±20 | V |
| Continuous Drain Current | ID | 0.31 A (at TA = +25°C) | A |
| Pulsed Drain Current | IDM | 0.8 A (10µs Pulse, Duty Cycle = 1%) | A |
| Drain-Source On-Resistance | RDS(ON) | 3.5 Ω (at VGS = 10V) | Ω |
| Gate-Source Threshold Voltage | VGS(th) | 0.5 V to 1.5 V | V |
| Input Capacitance | Ciss | 23.2 pF (at VDS = 25 V) | pF |
| Total Power Dissipation | PD | 0.38 W (at TA = +25°C) | W |
| Thermal Resistance, Junction to Ambient | RθJA | 338 °C/W (Steady State) | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 °C | °C |
Key Features
- Low On-Resistance: The BSS138K-13 features a low on-resistance of 3.5 Ω at VGS = 10V, making it efficient for power management applications.
- Low Input Capacitance: With an input capacitance of 23.2 pF at VDS = 25 V, this MOSFET minimizes input loading and enhances switching performance.
- Fast Switching Speed: The device boasts fast switching times, including a typical turn-on delay time of 3.2 ns and a typical turn-off delay time of 13.8 ns.
- ESD Protected Gate: The MOSFET includes ESD protection for the gate, ensuring robustness against electrostatic discharge.
- Environmentally Friendly: It is totally lead-free, halogen and antimony free, and fully RoHS compliant.
- Compact Package: The SOT23-3 surface mount package is ultra-small, making it ideal for space-constrained designs.
Applications
- Power Management Circuits: The BSS138K-13 is suitable for high-efficiency power management applications due to its low on-resistance and fast switching speed.
- Load Switches: It can be used as a load switch in various electronic circuits where low power consumption and fast switching are required.
- Automotive Applications: For automotive applications requiring specific change control, this MOSFET can be qualified to AEC-Q100/101/104/200 standards and is manufactured in IATF 16949 certified facilities.
- General Electronic Circuits: It is also suitable for general low power applications in consumer electronics, industrial control, and other fields where small signal MOSFETs are needed.
Q & A
- What is the maximum drain-source breakdown voltage of the BSS138K-13?
The maximum drain-source breakdown voltage is 50 V.
- What is the continuous drain current rating of the BSS138K-13 at 25°C?
The continuous drain current rating is 0.31 A at 25°C.
- What is the typical on-resistance of the BSS138K-13?
The typical on-resistance is 3.5 Ω at VGS = 10V.
- What is the gate-source threshold voltage range of the BSS138K-13?
The gate-source threshold voltage range is from 0.5 V to 1.5 V.
- Is the BSS138K-13 RoHS compliant?
Yes, the BSS138K-13 is fully RoHS compliant and lead-free.
- What is the operating temperature range of the BSS138K-13?
The operating temperature range is from -55°C to +150°C.
- What is the typical turn-on and turn-off delay time of the BSS138K-13?
The typical turn-on delay time is 3.2 ns, and the typical turn-off delay time is 13.8 ns.
- What package type is used for the BSS138K-13?
The BSS138K-13 is packaged in a SOT23-3 surface mount package.
- Is the BSS138K-13 suitable for automotive applications?
Yes, it can be qualified to AEC-Q100/101/104/200 standards and is manufactured in IATF 16949 certified facilities.
- What is the maximum power dissipation of the BSS138K-13?
The maximum power dissipation is 0.38 W at 25°C.
