MMBT3904T-13
  • Share:

Diodes Incorporated MMBT3904T-13

Manufacturer No:
MMBT3904T-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904T-13, produced by Diodes Incorporated, is a small signal NPN bipolar transistor designed for medium power amplification and switching applications. This transistor is part of the MMBT3904 series and is known for its high reliability and compliance with various industry standards. It features an ultra-small surface mount package (SOT-523) and is fully RoHS compliant, making it suitable for a wide range of electronic devices.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 60 V IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10µA, IC = 0
Collector Current IC 200 mA
Power Dissipation PD 150 mW
Transition Frequency fT 300 MHz VCE = 20V, IC = 10mA, f = 100MHz
DC Current Gain (hFE) hFE 40 - 300 IC = 100µA to 100mA, VCE = 1V
Collector-Emitter Saturation Voltage VCE(SAT) 300 mV IC = 10mA, IB = 1mA
Package SOT-523
Operating Temperature Range TJ -55°C to 150°C

Key Features

  • High Reliability: Qualified to AEC-Q101 standards for automotive applications, ensuring high reliability in demanding environments.
  • Environmental Compliance: Totally lead-free and fully RoHS compliant, with halogen and antimony-free “Green” molding compound.
  • Ultra-Small Package: SOT-523 surface mount package, ideal for space-constrained designs.
  • Complementary PNP Type: Available as MMBT3906T for matching PNP transistor requirements.
  • High Voltage Handling: Collector-Emitter breakdown voltage (BVCEO) of 40V and Collector-Base breakdown voltage (BVCBO) of 60V.
  • Low Saturation Voltage: Collector-Emitter saturation voltage (VCE(SAT)) of 300 mV, enhancing efficiency in switching applications.
  • Fast Switching Times: Delay time (tD), rise time (tR), storage time (tS), and fall time (tF) are all optimized for fast switching performance.

Applications

  • Medium Power Amplification: Suitable for amplifying signals in audio, video, and other electronic circuits.
  • Switching Circuits: Ideal for use in switching applications due to its fast switching times and low saturation voltage.
  • Automotive Electronics: Qualified to AEC-Q101 standards, making it suitable for use in automotive systems.
  • Consumer Electronics: Used in various consumer electronic devices such as TVs, radios, and other household appliances.
  • Industrial Control Systems: Can be used in industrial control circuits for reliable and efficient operation.

Q & A

  1. What is the maximum collector current of the MMBT3904T-13?

    The maximum collector current is 200 mA.

  2. What is the collector-emitter breakdown voltage (BVCEO) of the MMBT3904T-13?

    The BVCEO is 40 V.

  3. Is the MMBT3904T-13 RoHS compliant?

    Yes, it is fully RoHS compliant and lead-free.

  4. What is the package type of the MMBT3904T-13?

    The package type is SOT-523.

  5. What is the operating temperature range of the MMBT3904T-13?

    The operating temperature range is -55°C to 150°C.

  6. What is the transition frequency (fT) of the MMBT3904T-13?

    The transition frequency is 300 MHz.

  7. Is the MMBT3904T-13 suitable for automotive applications?

    Yes, it is qualified to AEC-Q101 standards for automotive use.

  8. What is the typical collector-emitter saturation voltage (VCE(SAT)) of the MMBT3904T-13?

    The typical VCE(SAT) is 300 mV.

  9. What are the switching times for the MMBT3904T-13?

    The delay time (tD) and rise time (tR) are both approximately 35 ns, the storage time (tS) is 200 ns, and the fall time (tF) is 50 ns.

  10. Does the MMBT3904T-13 have a complementary PNP type?

    Yes, the complementary PNP type is the MMBT3906T.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:150 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-523
Supplier Device Package:SOT-523
0 Remaining View Similar

In Stock

-
46

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MMBT3904T-13 MMBT3904-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 150 mW 310 mW
Frequency - Transition 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-523 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-523 SOT-23-3

Related Product By Categories

BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
PMBT3904MB,315
PMBT3904MB,315
Nexperia USA Inc.
TRANS NPN 40V 0.2A DFN1006B-3
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
MJD50TF
MJD50TF
onsemi
TRANS NPN 400V 1A DPAK
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC 817-16 E6327
BC 817-16 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC847CW/DG/B2,115
BC847CW/DG/B2,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAS70-04-7-F
BAS70-04-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
MBR10100CT-G1
MBR10100CT-G1
Diodes Incorporated
DIODE SCHOTT 100V 5A TO220AB
BAV23S-7
BAV23S-7
Diodes Incorporated
DIODE ARRAY GP 200V 400MA SOT23
1N4001GL-T
1N4001GL-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAS21W-7
BAS21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BAS16W-7
BAS16W-7
Diodes Incorporated
DIODE GEN PURP 75V 150MA SOT323
BZX84C12W-7-F
BZX84C12W-7-F
Diodes Incorporated
DIODE ZENER 12V 200MW SOT323
BZX84B11-7-F
BZX84B11-7-F
Diodes Incorporated
DIODE ZENER 11V 350MW SOT23
BZX84C10-7-G
BZX84C10-7-G
Diodes Incorporated
DIODE ZENER
BC817-40-7-F
BC817-40-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BC847BFZ-7B
BC847BFZ-7B
Diodes Incorporated
TRANS NPN 45V 0.1A 3DFN
BSS84DW-7
BSS84DW-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6