MMBT3904T-13
  • Share:

Diodes Incorporated MMBT3904T-13

Manufacturer No:
MMBT3904T-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904T-13, produced by Diodes Incorporated, is a small signal NPN bipolar transistor designed for medium power amplification and switching applications. This transistor is part of the MMBT3904 series and is known for its high reliability and compliance with various industry standards. It features an ultra-small surface mount package (SOT-523) and is fully RoHS compliant, making it suitable for a wide range of electronic devices.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 60 V IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10µA, IC = 0
Collector Current IC 200 mA
Power Dissipation PD 150 mW
Transition Frequency fT 300 MHz VCE = 20V, IC = 10mA, f = 100MHz
DC Current Gain (hFE) hFE 40 - 300 IC = 100µA to 100mA, VCE = 1V
Collector-Emitter Saturation Voltage VCE(SAT) 300 mV IC = 10mA, IB = 1mA
Package SOT-523
Operating Temperature Range TJ -55°C to 150°C

Key Features

  • High Reliability: Qualified to AEC-Q101 standards for automotive applications, ensuring high reliability in demanding environments.
  • Environmental Compliance: Totally lead-free and fully RoHS compliant, with halogen and antimony-free “Green” molding compound.
  • Ultra-Small Package: SOT-523 surface mount package, ideal for space-constrained designs.
  • Complementary PNP Type: Available as MMBT3906T for matching PNP transistor requirements.
  • High Voltage Handling: Collector-Emitter breakdown voltage (BVCEO) of 40V and Collector-Base breakdown voltage (BVCBO) of 60V.
  • Low Saturation Voltage: Collector-Emitter saturation voltage (VCE(SAT)) of 300 mV, enhancing efficiency in switching applications.
  • Fast Switching Times: Delay time (tD), rise time (tR), storage time (tS), and fall time (tF) are all optimized for fast switching performance.

Applications

  • Medium Power Amplification: Suitable for amplifying signals in audio, video, and other electronic circuits.
  • Switching Circuits: Ideal for use in switching applications due to its fast switching times and low saturation voltage.
  • Automotive Electronics: Qualified to AEC-Q101 standards, making it suitable for use in automotive systems.
  • Consumer Electronics: Used in various consumer electronic devices such as TVs, radios, and other household appliances.
  • Industrial Control Systems: Can be used in industrial control circuits for reliable and efficient operation.

Q & A

  1. What is the maximum collector current of the MMBT3904T-13?

    The maximum collector current is 200 mA.

  2. What is the collector-emitter breakdown voltage (BVCEO) of the MMBT3904T-13?

    The BVCEO is 40 V.

  3. Is the MMBT3904T-13 RoHS compliant?

    Yes, it is fully RoHS compliant and lead-free.

  4. What is the package type of the MMBT3904T-13?

    The package type is SOT-523.

  5. What is the operating temperature range of the MMBT3904T-13?

    The operating temperature range is -55°C to 150°C.

  6. What is the transition frequency (fT) of the MMBT3904T-13?

    The transition frequency is 300 MHz.

  7. Is the MMBT3904T-13 suitable for automotive applications?

    Yes, it is qualified to AEC-Q101 standards for automotive use.

  8. What is the typical collector-emitter saturation voltage (VCE(SAT)) of the MMBT3904T-13?

    The typical VCE(SAT) is 300 mV.

  9. What are the switching times for the MMBT3904T-13?

    The delay time (tD) and rise time (tR) are both approximately 35 ns, the storage time (tS) is 200 ns, and the fall time (tF) is 50 ns.

  10. Does the MMBT3904T-13 have a complementary PNP type?

    Yes, the complementary PNP type is the MMBT3906T.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:150 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-523
Supplier Device Package:SOT-523
0 Remaining View Similar

In Stock

-
46

Please send RFQ , we will respond immediately.

Same Series
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MMBT3904T-13 MMBT3904-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 150 mW 310 mW
Frequency - Transition 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-523 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-523 SOT-23-3

Related Product By Categories

BC858B,215
BC858B,215
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BC847CW_R1_00001
BC847CW_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.1A SOT323
TIP122TU
TIP122TU
Fairchild Semiconductor
TRANS NPN DARL 100V 5A TO220-3
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
SS8050-D-AP
SS8050-D-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92

Related Product By Brand

BAT54A-7-F
BAT54A-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAW56W-7-G
BAW56W-7-G
Diodes Incorporated
DIODE GEN PURPOSE
BAT54C-7-G
BAT54C-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
BZX84C5V6S-7-F
BZX84C5V6S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 5.6V SOT363
BZX84B5V1-7-F
BZX84B5V1-7-F
Diodes Incorporated
DIODE ZENER 5.1V 300MW SOT23
BZX84C2V7T-7-F
BZX84C2V7T-7-F
Diodes Incorporated
DIODE ZENER 2.7V 150MW SOT523
BZX84C20-7
BZX84C20-7
Diodes Incorporated
DIODE ZENER 20V 300MW SOT23-3
BZX84C5V1-7-F-79
BZX84C5V1-7-F-79
Diodes Incorporated
DIODE ZENER 5.1V 300MW SOT23
2N7002TQ-7-F
2N7002TQ-7-F
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT523
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
74LVC1G07FW4-7
74LVC1G07FW4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN