MMBT3904T-13
  • Share:

Diodes Incorporated MMBT3904T-13

Manufacturer No:
MMBT3904T-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904T-13, produced by Diodes Incorporated, is a small signal NPN bipolar transistor designed for medium power amplification and switching applications. This transistor is part of the MMBT3904 series and is known for its high reliability and compliance with various industry standards. It features an ultra-small surface mount package (SOT-523) and is fully RoHS compliant, making it suitable for a wide range of electronic devices.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 60 V IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10µA, IC = 0
Collector Current IC 200 mA
Power Dissipation PD 150 mW
Transition Frequency fT 300 MHz VCE = 20V, IC = 10mA, f = 100MHz
DC Current Gain (hFE) hFE 40 - 300 IC = 100µA to 100mA, VCE = 1V
Collector-Emitter Saturation Voltage VCE(SAT) 300 mV IC = 10mA, IB = 1mA
Package SOT-523
Operating Temperature Range TJ -55°C to 150°C

Key Features

  • High Reliability: Qualified to AEC-Q101 standards for automotive applications, ensuring high reliability in demanding environments.
  • Environmental Compliance: Totally lead-free and fully RoHS compliant, with halogen and antimony-free “Green” molding compound.
  • Ultra-Small Package: SOT-523 surface mount package, ideal for space-constrained designs.
  • Complementary PNP Type: Available as MMBT3906T for matching PNP transistor requirements.
  • High Voltage Handling: Collector-Emitter breakdown voltage (BVCEO) of 40V and Collector-Base breakdown voltage (BVCBO) of 60V.
  • Low Saturation Voltage: Collector-Emitter saturation voltage (VCE(SAT)) of 300 mV, enhancing efficiency in switching applications.
  • Fast Switching Times: Delay time (tD), rise time (tR), storage time (tS), and fall time (tF) are all optimized for fast switching performance.

Applications

  • Medium Power Amplification: Suitable for amplifying signals in audio, video, and other electronic circuits.
  • Switching Circuits: Ideal for use in switching applications due to its fast switching times and low saturation voltage.
  • Automotive Electronics: Qualified to AEC-Q101 standards, making it suitable for use in automotive systems.
  • Consumer Electronics: Used in various consumer electronic devices such as TVs, radios, and other household appliances.
  • Industrial Control Systems: Can be used in industrial control circuits for reliable and efficient operation.

Q & A

  1. What is the maximum collector current of the MMBT3904T-13?

    The maximum collector current is 200 mA.

  2. What is the collector-emitter breakdown voltage (BVCEO) of the MMBT3904T-13?

    The BVCEO is 40 V.

  3. Is the MMBT3904T-13 RoHS compliant?

    Yes, it is fully RoHS compliant and lead-free.

  4. What is the package type of the MMBT3904T-13?

    The package type is SOT-523.

  5. What is the operating temperature range of the MMBT3904T-13?

    The operating temperature range is -55°C to 150°C.

  6. What is the transition frequency (fT) of the MMBT3904T-13?

    The transition frequency is 300 MHz.

  7. Is the MMBT3904T-13 suitable for automotive applications?

    Yes, it is qualified to AEC-Q101 standards for automotive use.

  8. What is the typical collector-emitter saturation voltage (VCE(SAT)) of the MMBT3904T-13?

    The typical VCE(SAT) is 300 mV.

  9. What are the switching times for the MMBT3904T-13?

    The delay time (tD) and rise time (tR) are both approximately 35 ns, the storage time (tS) is 200 ns, and the fall time (tF) is 50 ns.

  10. Does the MMBT3904T-13 have a complementary PNP type?

    Yes, the complementary PNP type is the MMBT3906T.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:150 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-523
Supplier Device Package:SOT-523
0 Remaining View Similar

In Stock

-
46

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MMBT3904T-13 MMBT3904-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 150 mW 310 mW
Frequency - Transition 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-523 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-523 SOT-23-3

Related Product By Categories

BCX17,235
BCX17,235
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
NSV1C201LT1G
NSV1C201LT1G
onsemi
TRANS NPN 100V 2A SOT23-3
NSS60200LT1G
NSS60200LT1G
onsemi
TRANS PNP 60V 2A SOT23-3
BC846AW_R1_00001
BC846AW_R1_00001
Panjit International Inc.
TRANS NPN 65V 0.1A SOT323
MMBT3906L3-TP
MMBT3906L3-TP
Micro Commercial Co
TRANS PNP 40V 0.2A DFN1006-3
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
MMBT2222A_D87Z
MMBT2222A_D87Z
onsemi
TRANS NPN 40V 1A SOT23-3
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC857B/DG/B3,215
BC857B/DG/B3,215
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89

Related Product By Brand

BAS40-06-7-F
BAS40-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
MBR10100CT-G1
MBR10100CT-G1
Diodes Incorporated
DIODE SCHOTT 100V 5A TO220AB
BAT54SW-7-G
BAT54SW-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT323
BAT54LP-7B
BAT54LP-7B
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA 2DFN
BAS16LPQ-7
BAS16LPQ-7
Diodes Incorporated
FAST SWITCHING DIODE X1-DFN1006-
1N4148WT-7-G
1N4148WT-7-G
Diodes Incorporated
DIODE GEN PURP 80V 125MA SOD523
BZX84C3V3S-7-F-79
BZX84C3V3S-7-F-79
Diodes Incorporated
DIODE ZENER
BZX84C18-7-F-31
BZX84C18-7-F-31
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
BFS17HTA
BFS17HTA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
MMBT3904-7
MMBT3904-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
BSS84V-7
BSS84V-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SOT-563
BSS138DW-7
BSS138DW-7
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6