MMBT3904T-13
  • Share:

Diodes Incorporated MMBT3904T-13

Manufacturer No:
MMBT3904T-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904T-13, produced by Diodes Incorporated, is a small signal NPN bipolar transistor designed for medium power amplification and switching applications. This transistor is part of the MMBT3904 series and is known for its high reliability and compliance with various industry standards. It features an ultra-small surface mount package (SOT-523) and is fully RoHS compliant, making it suitable for a wide range of electronic devices.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 60 V IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10µA, IC = 0
Collector Current IC 200 mA
Power Dissipation PD 150 mW
Transition Frequency fT 300 MHz VCE = 20V, IC = 10mA, f = 100MHz
DC Current Gain (hFE) hFE 40 - 300 IC = 100µA to 100mA, VCE = 1V
Collector-Emitter Saturation Voltage VCE(SAT) 300 mV IC = 10mA, IB = 1mA
Package SOT-523
Operating Temperature Range TJ -55°C to 150°C

Key Features

  • High Reliability: Qualified to AEC-Q101 standards for automotive applications, ensuring high reliability in demanding environments.
  • Environmental Compliance: Totally lead-free and fully RoHS compliant, with halogen and antimony-free “Green” molding compound.
  • Ultra-Small Package: SOT-523 surface mount package, ideal for space-constrained designs.
  • Complementary PNP Type: Available as MMBT3906T for matching PNP transistor requirements.
  • High Voltage Handling: Collector-Emitter breakdown voltage (BVCEO) of 40V and Collector-Base breakdown voltage (BVCBO) of 60V.
  • Low Saturation Voltage: Collector-Emitter saturation voltage (VCE(SAT)) of 300 mV, enhancing efficiency in switching applications.
  • Fast Switching Times: Delay time (tD), rise time (tR), storage time (tS), and fall time (tF) are all optimized for fast switching performance.

Applications

  • Medium Power Amplification: Suitable for amplifying signals in audio, video, and other electronic circuits.
  • Switching Circuits: Ideal for use in switching applications due to its fast switching times and low saturation voltage.
  • Automotive Electronics: Qualified to AEC-Q101 standards, making it suitable for use in automotive systems.
  • Consumer Electronics: Used in various consumer electronic devices such as TVs, radios, and other household appliances.
  • Industrial Control Systems: Can be used in industrial control circuits for reliable and efficient operation.

Q & A

  1. What is the maximum collector current of the MMBT3904T-13?

    The maximum collector current is 200 mA.

  2. What is the collector-emitter breakdown voltage (BVCEO) of the MMBT3904T-13?

    The BVCEO is 40 V.

  3. Is the MMBT3904T-13 RoHS compliant?

    Yes, it is fully RoHS compliant and lead-free.

  4. What is the package type of the MMBT3904T-13?

    The package type is SOT-523.

  5. What is the operating temperature range of the MMBT3904T-13?

    The operating temperature range is -55°C to 150°C.

  6. What is the transition frequency (fT) of the MMBT3904T-13?

    The transition frequency is 300 MHz.

  7. Is the MMBT3904T-13 suitable for automotive applications?

    Yes, it is qualified to AEC-Q101 standards for automotive use.

  8. What is the typical collector-emitter saturation voltage (VCE(SAT)) of the MMBT3904T-13?

    The typical VCE(SAT) is 300 mV.

  9. What are the switching times for the MMBT3904T-13?

    The delay time (tD) and rise time (tR) are both approximately 35 ns, the storage time (tS) is 200 ns, and the fall time (tF) is 50 ns.

  10. Does the MMBT3904T-13 have a complementary PNP type?

    Yes, the complementary PNP type is the MMBT3906T.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:150 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-523
Supplier Device Package:SOT-523
0 Remaining View Similar

In Stock

-
46

Please send RFQ , we will respond immediately.

Same Series
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MMBT3904T-13 MMBT3904-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 150 mW 310 mW
Frequency - Transition 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-523 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-523 SOT-23-3

Related Product By Categories

BC858BMTF
BC858BMTF
Fairchild Semiconductor
TRANS PNP 30V 0.1A SOT23-3
BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MJ2955
MJ2955
NTE Electronics, Inc
TRANS PNP 60V 15A TO3
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
TIP30C
TIP30C
NTE Electronics, Inc
TRANS PNP 100V 1A TO220
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
TIP147G
TIP147G
onsemi
TRANS PNP DARL 100V 10A TO247-3
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
2N6107-AP
2N6107-AP
Micro Commercial Co
TRANS PNP 70V 7A TO220AB

Related Product By Brand

1N5711W-7-F
1N5711W-7-F
Diodes Incorporated
DIODE SCHOTTKY 70V 333MW SOD123
1N5711WS-7
1N5711WS-7
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
BAV99BRW-7-F
BAV99BRW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAV170Q-13-F
BAV170Q-13-F
Diodes Incorporated
SWITCHING DIODE BVR <= 100V SOT2
BAV23SQ-13-F
BAV23SQ-13-F
Diodes Incorporated
DIODE ARRAY GP 200V SOT23-3
1N5819HW-7-F
1N5819HW-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 1A SOD123
BAS20-7
BAS20-7
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
BAV170T-7-G
BAV170T-7-G
Diodes Incorporated
DIODE GEN PURPOSE
BZX84C6V8-7-F
BZX84C6V8-7-F
Diodes Incorporated
DIODE ZENER 6.8V 300MW SOT23-3
BZT52HC11WF-7
BZT52HC11WF-7
Diodes Incorporated
DIODE ZENER 11V SOD123F T&R 3K
BZX84C27-7-F-79
BZX84C27-7-F-79
Diodes Incorporated
DIODE ZENER
LM2903TH-13
LM2903TH-13
Diodes Incorporated
IC COMPARATOR DUAL DIFF 8TSSOP