2N7002TQ-7-F
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Diodes Incorporated 2N7002TQ-7-F

Manufacturer No:
2N7002TQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002Q, specifically the 2N7002TQ-7-F, is an N-Channel Enhancement Mode Field Effect Transistor (FET) produced by Diodes Incorporated. This MOSFET is designed to meet the stringent requirements of automotive applications and is qualified to AEC-Q101 standards. It is manufactured in IATF 16949 certified facilities and is supported by a Production Part Approval Process (PPAP). The device is totally lead-free, fully RoHS compliant, and free from halogen and antimony, making it a 'green' device. It is packaged in a small SOT23 surface mount package, which is UL flammability classified as 94V-0.

Key Specifications

ParameterValue
Drain-Source Voltage (BVDSS)60V
On-Resistance (RDS(ON))5Ω @ VGS = 10V, 7.5Ω @ VGS = 5V
Drain Current (ID)210mA @ VGS = 10V, 170mA @ VGS = 5V
Gate Threshold Voltage (VGS(th))Not specified, but typically low
Input Capacitance (Ciss)22 - 50 pF @ VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance (Coss)11 - 25 pF
Reverse Transfer Capacitance (Crss)Not specified
PackageSOT23
Case MaterialMolded Plastic, 'Green' Molding Compound
Moisture SensitivityLevel 1 per J-STD-020
TerminalsMatte Tin Plated Leads

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package (SOT23)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free ('Green' Device)
  • AEC-Q101 Qualified and PPAP Capable
  • Manufactured in IATF 16949 Certified Facilities

Applications

The 2N7002Q is ideal for use in various automotive applications, including:

  • Motor Control
  • Power Management Functions

Q & A

  1. What is the maximum drain-source voltage (BVDSS) of the 2N7002Q?
    The maximum drain-source voltage (BVDSS) is 60V.
  2. What is the on-resistance (RDS(ON)) of the 2N7002Q?
    The on-resistance (RDS(ON)) is 5Ω at VGS = 10V and 7.5Ω at VGS = 5V.
  3. What is the maximum drain current (ID) of the 2N7002Q?
    The maximum drain current (ID) is 210mA at VGS = 10V and 170mA at VGS = 5V.
  4. What package type is the 2N7002Q available in?
    The 2N7002Q is available in a SOT23 package.
  5. Is the 2N7002Q RoHS compliant?
    Yes, the 2N7002Q is totally lead-free and fully RoHS compliant.
  6. What are the key applications of the 2N7002Q?
    The key applications include motor control and power management functions in automotive systems.
  7. Is the 2N7002Q suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  8. What is the moisture sensitivity level of the 2N7002Q?
    The moisture sensitivity level is Level 1 per J-STD-020.
  9. What is the terminal finish of the 2N7002Q?
    The terminals have a matte tin plated finish.
  10. Is the 2N7002Q free from halogen and antimony?
    Yes, it is halogen and antimony free, making it a 'green' device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:13.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-523
Package / Case:SOT-523
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Same Series
2N7002TQ-7-F
2N7002TQ-7-F
MOSFET N-CH 60V 115MA SOT523
2N7002T-7
2N7002T-7
MOSFET N-CH 60V 115MA SOT-523

Similar Products

Part Number 2N7002TQ-7-F 2N7002EQ-7-F 2N7002Q-7-F 2N7002T-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 292mA (Ta) 170mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 13.5Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V 5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id - 2.5V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.5 nC @ 10 V 0.233 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 35 pF @ 30 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 150mW (Ta) 500mW (Ta) 370mW (Ta) 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-523 SOT-23-3 SOT-23-3 SOT-523
Package / Case SOT-523 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523

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