Overview
The 2N7002Q-7-F is a single N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to meet the stringent requirements of automotive applications and is qualified to AEC-Q101, supported by a Production Part Approval Process (PPAP). It is manufactured in IATF 16949 certified facilities, ensuring high reliability and quality. The MOSFET features low on-state resistance, low gate threshold voltage, and fast switching speed, making it ideal for high efficiency power management and motor control applications.
Key Specifications
| Attribute | Value | Unit |
|---|---|---|
| Fet Type | N-Ch | |
| No of Channels | 1 | |
| Drain-to-Source Voltage [Vdss] | 60 | V |
| Drain-Source On Resistance-Max | 13.5 | Ω |
| Rated Power Dissipation | 540 | mW |
| Gate Charge [Qg] | 223 | pC |
| Gate-Source Voltage-Max [Vgss] | ±20 | V |
| Drain Current | 210 | mA |
| Turn-on Delay Time | 2.8 | ns |
| Turn-off Delay Time | 7.6 | ns |
| Rise Time | 3 | ns |
| Fall Time | 5.6 | ns |
| Operating Temp Range | -55°C to +150°C | |
| Gate Source Threshold | 2.5 | V |
| Technology | Silicon | |
| Package Style | SOT-23 (SC-59, TO-236) | |
| Mounting Method | Surface Mount |
Key Features
- Low On-Resistance: The MOSFET has a low on-state resistance, which enhances its efficiency in power management applications.
- Low Gate Threshold Voltage: With a gate-source threshold voltage of 2.5V, it is easy to control the MOSFET with low voltage signals.
- Low Input Capacitance: The device features low input capacitance, which contributes to its fast switching speed.
- Fast Switching Speed: The MOSFET has fast turn-on and turn-off delay times, making it suitable for high-frequency applications.
- Small Surface Mount Package: The SOT-23 package is compact and suitable for space-constrained designs.
- Totally Lead-Free & Fully RoHS Compliant: The device is free from lead, halogen, and antimony, making it environmentally friendly.
- AEC-Q101 Qualified and PPAP Capable: It meets the stringent requirements of automotive applications and is manufactured in IATF 16949 certified facilities.
Applications
- Motor Control: The MOSFET is ideal for motor control applications due to its low on-resistance and fast switching capabilities.
- Power Management Functions: It is suitable for various power management functions in automotive and other high-efficiency power management systems.
Q & A
- What is the maximum drain-to-source voltage of the 2N7002Q-7-F MOSFET?
The maximum drain-to-source voltage is 60V.
- What is the typical on-state resistance of the 2N7002Q-7-F?
The typical on-state resistance is 13.5Ω at VGS = 5V).
- What is the maximum power dissipation of the 2N7002Q-7-F?
The maximum power dissipation is 540 mW).
- What is the gate-source threshold voltage of the 2N7002Q-7-F?
The gate-source threshold voltage is 2.5V).
- What is the operating temperature range of the 2N7002Q-7-F?
The operating temperature range is -55°C to +150°C).
- Is the 2N7002Q-7-F AEC-Q101 qualified?
Yes, the 2N7002Q-7-F is AEC-Q101 qualified and PPAP capable).
- What is the package style of the 2N7002Q-7-F?
The package style is SOT-23 (SC-59, TO-236)).
- Is the 2N7002Q-7-F lead-free and RoHS compliant?
Yes, the 2N7002Q-7-F is totally lead-free and fully RoHS compliant).
- What are the typical applications of the 2N7002Q-7-F?
The typical applications include motor control and power management functions).
- What is the maximum gate-source voltage of the 2N7002Q-7-F?
The maximum gate-source voltage is ±20V).
