2N7002W-7-F
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Diodes Incorporated 2N7002W-7-F

Manufacturer No:
2N7002W-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002W-7-F is a Small Signal Field-Effect Transistor (FET) produced by Diodes Incorporated. This N-channel enhancement-mode MOSFET is designed for efficient power control in compact packages, making it suitable for a variety of applications requiring moderate power handling. It features a drain-source voltage (Vds) of 60V and a drain current (Id) of 0.115A, making it ideal for high-speed switching and power management tasks. The transistor is housed in an ultra-small SOT-323 package, which is surface mountable, simplifying the assembly process and making it suitable for high-volume manufacturing.

Key Specifications

Attribute Value
FET Type N-Channel Enhancement Mode
Drain-to-Source Voltage (Vdss) 60V
Drain-Source On Resistance (Rds(on)) 7.5Ω (max)
Continuous Drain Current (Id) 0.115A
Rated Power Dissipation 200 mW
Package Style SOT-323 (SC-70)
Mounting Method Surface Mount
Gate-Source Threshold Voltage (Vgs(th)) ±2V
Operating Temperature Range -55°C to +150°C
Moisture Sensitivity Level Level 1 per J-STD-020
UL Flammability Classification 94V-0

Key Features

  • Low-On Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package (SOT-323)
  • Totally Lead-Free & Fully RoHS compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to JEDEC standards for High Reliability
  • Operating and Storage Temperature Range: -55°C to +150°C

Applications

The 2N7002W-7-F is versatile and can be used in various applications, including:

  • Power Management
  • Defence, Military & Aerospace
  • Automotive
  • Consumer Electronics
  • High-Speed Switching Circuits
  • Common Drain Amplifiers

Q & A

  1. What is the drain-source voltage (Vds) of the 2N7002W-7-F?

    The drain-source voltage (Vds) of the 2N7002W-7-F is 60V.

  2. What is the maximum drain current (Id) of the 2N7002W-7-F?

    The maximum drain current (Id) of the 2N7002W-7-F is 0.115A.

  3. What is the package style of the 2N7002W-7-F?

    The package style of the 2N7002W-7-F is SOT-323 (SC-70).

  4. Is the 2N7002W-7-F RoHS compliant?

    Yes, the 2N7002W-7-F is fully RoHS compliant.

  5. What is the operating temperature range of the 2N7002W-7-F?

    The operating temperature range of the 2N7002W-7-F is -55°C to +150°C.

  6. What are some key features of the 2N7002W-7-F?

    Key features include low-on resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.

  7. Is the 2N7002W-7-F suitable for automotive applications?

    Yes, the 2N7002W-7-F can be used in automotive applications, though for specific automotive-grade requirements, the Q-suffix part should be considered.

  8. What is the moisture sensitivity level of the 2N7002W-7-F?

    The moisture sensitivity level of the 2N7002W-7-F is Level 1 per J-STD-020.

  9. What is the UL flammability classification of the 2N7002W-7-F?

    The UL flammability classification of the 2N7002W-7-F is 94V-0.

  10. Is the 2N7002W-7-F halogen and antimony free?

    Yes, the 2N7002W-7-F is halogen and antimony free, classified as a “Green” device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Same Series
2N7002W-7
2N7002W-7
MOSFET N-CH 60V 115MA SOT-323

Similar Products

Part Number 2N7002W-7-F 2N7002E-7-F 2N7002Q-7-F 2N7002T-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 250mA (Ta) 170mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 3Ohm @ 250mA, 10V 5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.22 nC @ 4.5 V 0.233 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 200mW (Ta) 370mW (Ta) 370mW (Ta) 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3 SOT-23-3 SOT-523
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523

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