2N7002W-7
  • Share:

Diodes Incorporated 2N7002W-7

Manufacturer No:
2N7002W-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT-323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002W-7-F by Diodes Incorporated is a Small Signal Field-Effect Transistor (FET) designed for efficient power control in a compact package. It is an N-channel enhancement mode MOSFET, fabricated using metal-oxide semiconductor technology, which ensures high efficiency and reliability in various circuit designs. This transistor is suitable for moderate power applications due to its drain current (I(D)) of up to 115 mA and a drain-source voltage (Vds) of 60 V. The component is housed in a SOT-323 (SC-70) package, known for its ultra-small size, which is critical for space-constrained applications. The surface mount technology (SMT) design simplifies the assembly process, making it suitable for high-volume manufacturing.

Key Specifications

Attribute Value Unit
FET Type N-Channel
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance (RDS(on)) Max 7.5 Ω
Rated Power Dissipation 200 mW
Package Style SOT-323 (SC-70)
Mounting Method Surface Mount
Operating Temperature Range -55 to +150 °C
Gate Threshold Voltage (Vgs(th)) 2 V
Drain Current (ID) Max 115 mA

Key Features

  • Low-On Resistance (RDS(on))
  • Low Gate Threshold Voltage (Vgs(th))
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package (SOT-323)
  • Operating and Storage Temperature Range: -55 to +150 °C
  • Power Dissipation: 200 mW
  • ESD Protected
  • Rohs Compliant, Pb-Free, and Halogen Free/BFR Free

Applications

The 2N7002W-7-F is versatile and can be used in various applications due to its efficient switching and power control capabilities.

  • Energy and Power Systems: Suitable for smart metering devices, power management modules in renewable energy systems such as solar power inverters, where efficient power conversion and control are crucial.
  • Transportation and Logistics: Can be used in electronic control units (ECUs) for various forms of transportation and in RFID tagging systems for inventory tracking.
  • Telecommunications: Useful in signal amplification and switching applications, such as amplifiers or modulators, where precise control over signal paths is necessary.
  • Portable Applications: Suitable for devices like digital still cameras (DSC), personal digital assistants (PDA), and other portable electronics.
  • DC-DC Converters and Level Shift Circuits: Ideal for applications requiring low side load switching and efficient power management.

Q & A

  1. What is the drain-to-source voltage (Vdss) of the 2N7002W-7-F?

    The drain-to-source voltage (Vdss) of the 2N7002W-7-F is 60 V.

  2. What is the maximum drain-source on resistance (RDS(on)) of the 2N7002W-7-F?

    The maximum drain-source on resistance (RDS(on)) of the 2N7002W-7-F is 7.5 Ω.

  3. What is the package style of the 2N7002W-7-F?

    The package style of the 2N7002W-7-F is SOT-323 (SC-70).

  4. What is the operating temperature range of the 2N7002W-7-F?

    The operating temperature range of the 2N7002W-7-F is -55 to +150 °C.

  5. Is the 2N7002W-7-F RoHS compliant?
  6. What are some typical applications of the 2N7002W-7-F?

    The 2N7002W-7-F can be used in energy and power systems, transportation and logistics, telecommunications, portable applications, and DC-DC converters.

  7. What is the maximum drain current (ID) of the 2N7002W-7-F?

    The maximum drain current (ID) of the 2N7002W-7-F is 115 mA.

  8. Does the 2N7002W-7-F have ESD protection?
  9. What is the gate threshold voltage (Vgs(th)) of the 2N7002W-7-F?

    The gate threshold voltage (Vgs(th)) of the 2N7002W-7-F is approximately 2 V.

  10. How is the 2N7002W-7-F mounted?

    The 2N7002W-7-F is mounted using surface mount technology (SMT).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

-
410

Please send RFQ , we will respond immediately.

Same Series
2N7002W-7
2N7002W-7
MOSFET N-CH 60V 115MA SOT-323

Similar Products

Part Number 2N7002W-7 2N7002W-G 2N7002A-7 2N7002H-7 2N7002K-7 2N7002T-7
Manufacturer Diodes Incorporated Comchip Technology Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Discontinued at Digi-Key Active Active Active Active Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 115mA (Ta) 180mA (Ta) 170mA (Ta) 380mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V 5V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 5Ohm @ 500mA, 10V 6Ohm @ 115mA, 5V 7.5Ohm @ 50mA, 5V 2Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA 2V @ 250µA 3V @ 250µA 2.5V @ 1mA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - - 0.35 nC @ 4.5 V 0.3 nC @ 4.5 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 23 pF @ 25 V 26 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 200mW (Ta) 200mW (Ta) 370mW (Ta) 370mW (Ta) 370mW (Ta) 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323 SOT-23-3 SOT-23-3 SOT-23-3 SOT-523
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET

Related Product By Brand

BAV70HDWQ-13
BAV70HDWQ-13
Diodes Incorporated
DIODE FS 100V 125MA SOT363
BAT54TA
BAT54TA
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT43WS-7-F
BAT43WS-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
BZT52HC30WF-7
BZT52HC30WF-7
Diodes Incorporated
DIODE ZENER 30V 375MW SOD123F
BZX84C33T-7-F
BZX84C33T-7-F
Diodes Incorporated
DIODE ZENER 33V 150MW SOT523
BZX84C27Q-7-F
BZX84C27Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZT52HC18WFQ-7
BZT52HC18WFQ-7
Diodes Incorporated
DIODE ZENER 18V 375MW SOD123F
BZX84C39-7-G
BZX84C39-7-G
Diodes Incorporated
DIODE ZENER
MMBT3904FA-7B
MMBT3904FA-7B
Diodes Incorporated
TRANS NPN 40V 0.2A 3DFN
BCX5310TA
BCX5310TA
Diodes Incorporated
TRANS PNP 80V 1A SOT89-3
2N7002V-7
2N7002V-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
BSS138W-7
BSS138W-7
Diodes Incorporated
MOSFET N-CH 50V 0.2A SOT323