2N7002W-7
  • Share:

Diodes Incorporated 2N7002W-7

Manufacturer No:
2N7002W-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT-323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002W-7-F by Diodes Incorporated is a Small Signal Field-Effect Transistor (FET) designed for efficient power control in a compact package. It is an N-channel enhancement mode MOSFET, fabricated using metal-oxide semiconductor technology, which ensures high efficiency and reliability in various circuit designs. This transistor is suitable for moderate power applications due to its drain current (I(D)) of up to 115 mA and a drain-source voltage (Vds) of 60 V. The component is housed in a SOT-323 (SC-70) package, known for its ultra-small size, which is critical for space-constrained applications. The surface mount technology (SMT) design simplifies the assembly process, making it suitable for high-volume manufacturing.

Key Specifications

Attribute Value Unit
FET Type N-Channel
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance (RDS(on)) Max 7.5 Ω
Rated Power Dissipation 200 mW
Package Style SOT-323 (SC-70)
Mounting Method Surface Mount
Operating Temperature Range -55 to +150 °C
Gate Threshold Voltage (Vgs(th)) 2 V
Drain Current (ID) Max 115 mA

Key Features

  • Low-On Resistance (RDS(on))
  • Low Gate Threshold Voltage (Vgs(th))
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package (SOT-323)
  • Operating and Storage Temperature Range: -55 to +150 °C
  • Power Dissipation: 200 mW
  • ESD Protected
  • Rohs Compliant, Pb-Free, and Halogen Free/BFR Free

Applications

The 2N7002W-7-F is versatile and can be used in various applications due to its efficient switching and power control capabilities.

  • Energy and Power Systems: Suitable for smart metering devices, power management modules in renewable energy systems such as solar power inverters, where efficient power conversion and control are crucial.
  • Transportation and Logistics: Can be used in electronic control units (ECUs) for various forms of transportation and in RFID tagging systems for inventory tracking.
  • Telecommunications: Useful in signal amplification and switching applications, such as amplifiers or modulators, where precise control over signal paths is necessary.
  • Portable Applications: Suitable for devices like digital still cameras (DSC), personal digital assistants (PDA), and other portable electronics.
  • DC-DC Converters and Level Shift Circuits: Ideal for applications requiring low side load switching and efficient power management.

Q & A

  1. What is the drain-to-source voltage (Vdss) of the 2N7002W-7-F?

    The drain-to-source voltage (Vdss) of the 2N7002W-7-F is 60 V.

  2. What is the maximum drain-source on resistance (RDS(on)) of the 2N7002W-7-F?

    The maximum drain-source on resistance (RDS(on)) of the 2N7002W-7-F is 7.5 Ω.

  3. What is the package style of the 2N7002W-7-F?

    The package style of the 2N7002W-7-F is SOT-323 (SC-70).

  4. What is the operating temperature range of the 2N7002W-7-F?

    The operating temperature range of the 2N7002W-7-F is -55 to +150 °C.

  5. Is the 2N7002W-7-F RoHS compliant?
  6. What are some typical applications of the 2N7002W-7-F?

    The 2N7002W-7-F can be used in energy and power systems, transportation and logistics, telecommunications, portable applications, and DC-DC converters.

  7. What is the maximum drain current (ID) of the 2N7002W-7-F?

    The maximum drain current (ID) of the 2N7002W-7-F is 115 mA.

  8. Does the 2N7002W-7-F have ESD protection?
  9. What is the gate threshold voltage (Vgs(th)) of the 2N7002W-7-F?

    The gate threshold voltage (Vgs(th)) of the 2N7002W-7-F is approximately 2 V.

  10. How is the 2N7002W-7-F mounted?

    The 2N7002W-7-F is mounted using surface mount technology (SMT).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

-
410

Please send RFQ , we will respond immediately.

Same Series
2N7002W-7
2N7002W-7
MOSFET N-CH 60V 115MA SOT-323

Similar Products

Part Number 2N7002W-7 2N7002W-G 2N7002A-7 2N7002H-7 2N7002K-7 2N7002T-7
Manufacturer Diodes Incorporated Comchip Technology Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Discontinued at Digi-Key Active Active Active Active Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 115mA (Ta) 180mA (Ta) 170mA (Ta) 380mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V 5V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 5Ohm @ 500mA, 10V 6Ohm @ 115mA, 5V 7.5Ohm @ 50mA, 5V 2Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA 2V @ 250µA 3V @ 250µA 2.5V @ 1mA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - - 0.35 nC @ 4.5 V 0.3 nC @ 4.5 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 23 pF @ 25 V 26 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 200mW (Ta) 200mW (Ta) 370mW (Ta) 370mW (Ta) 370mW (Ta) 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323 SOT-23-3 SOT-23-3 SOT-23-3 SOT-523
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS20DWQ-13
BAS20DWQ-13
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
B340A-13-F
B340A-13-F
Diodes Incorporated
DIODE SCHOTTKY 40V 3A SMA
BAT760Q-7
BAT760Q-7
Diodes Incorporated
DIODE SCHOTTKY 30V 1A SOD323
1N4001GL-T
1N4001GL-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
1N4148WT-7-G
1N4148WT-7-G
Diodes Incorporated
DIODE GEN PURP 80V 125MA SOD523
BZX84B4V7Q-7-F
BZX84B4V7Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C16W-7-F
BZX84C16W-7-F
Diodes Incorporated
DIODE ZENER 16V 200MW SOT323
BZX84C10-7-G
BZX84C10-7-G
Diodes Incorporated
DIODE ZENER
BZX84C47-7
BZX84C47-7
Diodes Incorporated
DIODE ZENER 47V 350MW SOT23-3
BZX84C7V5-7-F-79
BZX84C7V5-7-F-79
Diodes Incorporated
DIODE ZENER 7.5V 300MW SOT23
BFS17NQTA
BFS17NQTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23