Overview
The 2N7002A-7 is an N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for high-efficiency power management applications. It features a low on-resistance, low gate threshold voltage, and low input capacitance, which are crucial for efficient and reliable operation in various electronic systems.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V |
| Gate-Source Voltage (Continuous) | VGSS | ±20 | V |
| Gate-Source Voltage (Non-Repetitive, tp < 50 ms) | VGSS | ±40 | V |
| Maximum Drain Current (Continuous) | ID | 220 | mA (at VGS = 10V, TA = +25°C) |
| Maximum Drain Current (Pulsed, 10µs Pulse, Duty Cycle = 1%) | IDM | 800 | mA |
| Static Drain-Source On-Resistance | RDS(ON) | 6 Ω (at VGS = 5V, ID = 50 mA) | Ω |
| Gate Threshold Voltage | VGS(th) | 1 - 2.5 | V |
| Input Capacitance | Ciss | 22 - 50 | pF (at VDS = 25V, VGS = 0V, f = 1.0 MHz) |
| Output Capacitance | Coss | 11 - 25 | pF |
| Reverse Transfer Capacitance | Crss | 2.0 - 5.0 | pF |
| Total Power Dissipation | PD | 370 mW (at TA = +25°C) | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 348 °C/W | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Key Features
- Low On-Resistance: Minimized on-state resistance for high efficiency.
- Low Gate Threshold Voltage: Ensures easy switching and low power consumption.
- Low Input Capacitance: Reduces the impact on high-frequency operations.
- Fast Switching Speed: Ideal for applications requiring quick and reliable switching.
- Small Surface Mount Package: SOT23 package for compact design.
- ESD Protected Gate: 1.2kV HBM, 1kV CDM protection.
- Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- Halogen and Antimony Free: “Green” device suitable for eco-friendly designs.
Applications
- Motor Control: Suitable for small servo motor control and other motor applications.
- Power Management Functions: Ideal for high-efficiency power management in various electronic systems.
- Switching Applications: Used in power MOSFET gate drivers and other switching applications.
- Automotive Applications: Can be used in automotive systems requiring specific change control and regulatory compliance.
Q & A
- What is the maximum drain-source voltage (VDSS) of the 2N7002A-7 MOSFET?
The maximum drain-source voltage (VDSS) is 60V. - What is the maximum continuous drain current (ID) at 25°C?
The maximum continuous drain current (ID) at 25°C is 220 mA. - What is the typical on-resistance (RDS(ON)) of the 2N7002A-7?
The typical on-resistance (RDS(ON)) is 6 Ω at VGS = 5V and ID = 50 mA. - What is the gate threshold voltage range of the 2N7002A-7?
The gate threshold voltage range is 1 to 2.5 V. - Is the 2N7002A-7 ESD protected?
Yes, the 2N7002A-7 has ESD protection with 1.2kV HBM and 1kV CDM. - What is the operating temperature range of the 2N7002A-7?
The operating and storage temperature range is -55 to +150 °C. - What package type does the 2N7002A-7 come in?
The 2N7002A-7 comes in a SOT23 surface mount package. - Is the 2N7002A-7 RoHS compliant?
Yes, the 2N7002A-7 is totally lead-free and fully RoHS compliant. - What are some common applications of the 2N7002A-7?
Common applications include motor control, power management functions, and switching applications. - What is the maximum total power dissipation of the 2N7002A-7 at 25°C?
The maximum total power dissipation at 25°C is 370 mW.
