2N7002H-7
  • Share:

Diodes Incorporated 2N7002H-7

Manufacturer No:
2N7002H-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 170MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002H-7 is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is designed for low-power switching applications and is housed in a small SOT-23 package. It features a low threshold voltage and low on-resistance, making it ideal for various electronic devices requiring efficient voltage level shifting, signal amplification, and power management.

Key Specifications

Parameter Value Unit Test Condition
Vds - Drain-Source Breakdown Voltage 60 V VGS = 0V, ID = 10µA
Rds On - Drain-Source Resistance 7.5 Ω VGS = 5V
Id - Continuous Drain Current 210 mA TA = +25°C
Vgs - Gate-Source Voltage -20 to +20 V
Threshold Voltage 1 to 2 V
Qg - Gate Charge 352 pC
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Power Dissipation 510 mW
Fall Time 4.7 ns
Rise Time 2.9 ns
Typical Turn-Off Delay Time 8.4 ns
Typical Turn-On Delay Time 3.7 ns
Package SOT-23

Key Features

  • N-Channel MOSFET
  • Low On-Resistance (7.5Ω @ VGS = 5V)
  • Low Gate Threshold Voltage (1V to 2V)
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package (SOT-23)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Suitable for automotive applications requiring specific change control (AEC-Q101, PPAP capable)

Applications

The 2N7002H-7 is commonly used in various low-power applications such as:

  • Signal switching
  • Impedance matching
  • Interface circuits
  • Portable electronics
  • Battery management
  • Power management systems

Q & A

  1. What is the maximum drain-source breakdown voltage of the 2N7002H-7?

    The maximum drain-source breakdown voltage is 60V.

  2. What is the typical on-resistance of the 2N7002H-7?

    The typical on-resistance is 7.5Ω at VGS = 5V.

  3. What is the continuous drain current rating of the 2N7002H-7?

    The continuous drain current rating is 210mA at TA = +25°C.

  4. What is the gate-source voltage range for the 2N7002H-7?

    The gate-source voltage range is -20V to +20V.

  5. What is the threshold voltage of the 2N7002H-7?

    The threshold voltage is between 1V and 2V.

  6. What is the package type of the 2N7002H-7?

    The package type is SOT-23.

  7. Is the 2N7002H-7 RoHS compliant?

    Yes, the 2N7002H-7 is fully RoHS compliant.

  8. What are the typical turn-on and turn-off delay times for the 2N7002H-7?

    The typical turn-on delay time is 3.7ns, and the typical turn-off delay time is 8.4ns.

  9. What are some common applications of the 2N7002H-7?

    Common applications include signal switching, impedance matching, interface circuits, portable electronics, battery management, and power management systems.

  10. Is the 2N7002H-7 suitable for automotive applications?

    Yes, it is suitable for automotive applications requiring specific change control (AEC-Q101, PPAP capable).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.35 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:26 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.28
1,385

Please send RFQ , we will respond immediately.

Same Series
2N7002H-13
2N7002H-13
MOSFET N-CH 60V 170MA SOT23

Similar Products

Part Number 2N7002H-7 2N7002K-7 2N7002W-7 2N7002T-7 2N7002-7 2N7002A-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 380mA (Ta) 115mA (Ta) 115mA (Ta) 115mA (Ta) 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V, 10V 5V, 10V 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 2Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 7.5Ohm @ 50mA, 5V 7.5Ohm @ 50mA, 5V 6Ohm @ 115mA, 5V
Vgs(th) (Max) @ Id 3V @ 250µA 2.5V @ 1mA 2V @ 250µA 2V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.35 nC @ 4.5 V 0.3 nC @ 4.5 V - - - -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 26 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 23 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 370mW (Ta) 370mW (Ta) 200mW (Ta) 150mW (Ta) 370mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-323 SOT-523 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SOT-523 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

BAV99BRVA-7
BAV99BRVA-7
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT563
BAW56W-7-G
BAW56W-7-G
Diodes Incorporated
DIODE GEN PURPOSE
1N5819HW-7-F
1N5819HW-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 1A SOD123
BAS40T-7-F
BAS40T-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT523
BZX84B30Q-7-F
BZX84B30Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BC857AW-7-F
BC857AW-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT323
BC857CT-7-F
BC857CT-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT523
BC847BLD-7
BC847BLD-7
Diodes Incorporated
TRANS NPN 45V 0.2A SOT23-3
BSS84V-7
BSS84V-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SOT-563
BSS138DW-7
BSS138DW-7
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
BSS8402DW-7
BSS8402DW-7
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6
2N7002-13-F-79
2N7002-13-F-79
Diodes Incorporated
DIODE