BSS84W-7-F
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Diodes Incorporated BSS84W-7-F

Manufacturer No:
BSS84W-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 50V 130MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84W-7-F is a P-Channel Enhancement Mode Field Effect Transistor (MOSFET) manufactured by Diodes Incorporated. This component is designed for small signal applications and is known for its high performance and reliability. The BSS84W-7-F is packaged in a SOT-323 (SC-70) surface mount package, making it suitable for a wide range of electronic designs where space efficiency is crucial.

Key Specifications

FET Type P-Channel
Drain-to-Source Voltage (Vdss) 50 V
Drain-Source On Resistance (Max) 10 Ω
Rated Power Dissipation 200 mW
Package Style SOT-323 (SC-70)
Mounting Method Surface Mount
Operating Temperature Range -55 °C to 150 °C
Maximum Drain Current 0.13 A
Gate Threshold Voltage ±2 V

Key Features

  • Enhancement Mode Operation: The BSS84W-7-F operates in enhancement mode, which means it is normally off and requires a positive gate-source voltage to turn on.
  • Low On-Resistance: With a maximum drain-source on resistance of 10 Ω, this MOSFET minimizes power losses during operation.
  • High Voltage Rating: The component has a drain-to-source voltage rating of 50 V, making it suitable for applications requiring higher voltage handling.
  • Compact Packaging: The SOT-323 (SC-70) package is compact and ideal for space-constrained designs.
  • Broad Operating Temperature Range: The MOSFET can operate over a temperature range of -55 °C to 150 °C, ensuring reliability in various environmental conditions.

Applications

  • Small Signal Switching: The BSS84W-7-F is suitable for switching small signals in electronic circuits.
  • Amplification: It can be used in amplifier circuits where low noise and high fidelity are required.
  • Power Management: This MOSFET can be used in power management circuits to control and regulate power flow.
  • Automotive and Industrial Electronics: Although not specifically rated for automotive use, it can be used in various industrial electronic applications due to its robust specifications.

Q & A

  1. What is the drain-to-source voltage rating of the BSS84W-7-F?

    The drain-to-source voltage rating is 50 V.

  2. What is the maximum drain-source on resistance of the BSS84W-7-F?

    The maximum drain-source on resistance is 10 Ω.

  3. What is the package style of the BSS84W-7-F?

    The package style is SOT-323 (SC-70).

  4. What is the operating temperature range of the BSS84W-7-F?

    The operating temperature range is -55 °C to 150 °C.

  5. What is the maximum drain current of the BSS84W-7-F?

    The maximum drain current is 0.13 A.

  6. Is the BSS84W-7-F suitable for automotive applications?

    No, it is not specifically rated for automotive use.

  7. What is the rated power dissipation of the BSS84W-7-F?

    The rated power dissipation is 200 mW.

  8. How is the BSS84W-7-F typically packaged for shipping?

    The component is shipped in tape and reel packaging.

  9. What is the gate threshold voltage range of the BSS84W-7-F?

    The gate threshold voltage range is ±2 V.

  10. Is the BSS84W-7-F lead-free and RoHS compliant?

    Yes, the BSS84W-7-F is lead-free and RoHS compliant.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Same Series
BSS84W-7-F
BSS84W-7-F
MOSFET P-CH 50V 130MA SOT323
BSS84W-7
BSS84W-7
MOSFET P-CH 50V 130MA SOT323

Similar Products

Part Number BSS84W-7-F BSS84WQ-7-F BSS84-7-F BSS84Q-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta) 130mA (Ta) 130mA (Ta) 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V 5V
Rds On (Max) @ Id, Vgs 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - - 0.59 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 25 V 45 pF @ 25 V 45 pF @ 25 V 45 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 200mW (Ta) 200mW (Ta) 300mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323 SOT-23-3 SOT-23-3
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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