BSS84-7-F
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Diodes Incorporated BSS84-7-F

Manufacturer No:
BSS84-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 50V 130MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84-7-F is a P-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is part of the BSS138 series and is available in a SOT-23-3 package. It is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.

Key Specifications

Attribute Value Unit
FET Type P-Channel
Drain-to-Source Voltage (Vdss) -50 V
Drain-Source On Resistance-Max (RDS(ON)) 10 Ω
Rated Power Dissipation (PD) 300 mW
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Drain Current (ID) -130 mA
Gate Threshold Voltage (VGS(th)) -0.8 to -2.0 V
Operating and Storage Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Ambient (RθJA) 417 °C/W

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Finish (Lead Free Plating) Solderable per MIL-STD-202, Method 208

Applications

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch
  • High-efficiency power management applications
  • Automotive applications (with the Q-suffix part, BSS84Q)

Q & A

  1. What is the drain-to-source voltage (Vdss) of the BSS84-7-F MOSFET?

    The drain-to-source voltage (Vdss) of the BSS84-7-F MOSFET is -50V.

  2. What is the maximum drain-source on resistance (RDS(ON)) of the BSS84-7-F?

    The maximum drain-source on resistance (RDS(ON)) of the BSS84-7-F is 10Ω at VGS = -5V.

  3. What is the rated power dissipation (PD) of the BSS84-7-F?

    The rated power dissipation (PD) of the BSS84-7-F is 300 mW.

  4. What is the package style and mounting method of the BSS84-7-F?

    The BSS84-7-F is packaged in a SOT-23 (SC-59, TO-236) package and is surface mountable.

  5. What are the key features of the BSS84-7-F MOSFET?

    The key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.

  6. What are the typical applications of the BSS84-7-F MOSFET?

    The BSS84-7-F is typically used in general purpose interfacing switches, power management functions, and as an analog switch.

  7. Is the BSS84-7-F MOSFET RoHS compliant?

    Yes, the BSS84-7-F MOSFET is totally lead-free and fully RoHS compliant.

  8. What is the operating and storage temperature range of the BSS84-7-F?

    The operating and storage temperature range of the BSS84-7-F is -55 to +150 °C.

  9. What is the thermal resistance, junction to ambient (RθJA), of the BSS84-7-F?

    The thermal resistance, junction to ambient (RθJA), of the BSS84-7-F is 417 °C/W.

  10. Is there an automotive-compliant version of the BSS84-7-F MOSFET?

    Yes, an automotive-compliant part is available under the separate datasheet for the BSS84Q.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSS84-7
BSS84-7
MOSFET P-CH 50V 130MA SOT23-3

Similar Products

Part Number BSS84-7-F BSS84W-7-F BSS84Q-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta) 130mA (Ta) 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V
Rds On (Max) @ Id, Vgs 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - 0.59 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 25 V 45 pF @ 25 V 45 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300mW (Ta) 200mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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