Overview
The 2N7002DWK-13, produced by Diodes Incorporated, is a dual N-channel enhancement mode MOSFET designed for high-efficiency power management applications. This device is packaged in a compact SOT-363 (SC-88) package, making it ideal for space-constrained designs. The MOSFET features low on-state resistance, low gate threshold voltage, and fast switching speeds, which are crucial for minimizing power losses and enhancing overall system performance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V |
| Gate-Source Voltage | VGSS | ±20 | V |
| Continuous Drain Current (VGS = 10V, TA = +25°C) | ID | 261 | mA |
| Maximum Continuous Body Diode Forward Current | IS | 261 | mA |
| Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) | IDM | 1.1 | A |
| On-State Drain Current (VGS = 10V, VDS = 7.5V) | ID(on) | 0.50 - 1.43 | A |
| On-Resistance (VGS = 10V, ID = 200mA) | RDS(ON) | 3.0 - 4.0 | Ω |
| Gate Threshold Voltage | VGS(TH) | 2 - 4 | V |
| Input Capacitance (VDS = 25V, VGS = 0V, f = 1.0 MHz) | Ciss | 37.8 - 50 | pF |
| Turn-On Delay Time (VDD = 30V, ID = 0.2A, VGEN = 10V, RL = 150Ω, RGEN = 25Ω) | tD(ON) | 5.85 - 20 | ns |
| Turn-Off Delay Time | tD(OFF) | 12.5 - 20 | ns |
Key Features
- Dual N-Channel MOSFET: Provides two independent N-channel MOSFETs in a single package, enhancing design flexibility.
- Low On-Resistance: Minimizes power losses and improves overall system efficiency.
- Low Gate Threshold Voltage: Ensures easy switching and low gate drive requirements.
- Low Input Capacitance: Reduces the need for large gate drive currents and improves switching speed.
- Fast Switching Speed: Ideal for high-frequency applications requiring rapid switching.
- Low Input/Output Leakage: Minimizes standby power consumption and enhances reliability.
- ESD Protected: Provides protection against electrostatic discharge, enhancing device reliability.
- Totally Lead-Free & Fully RoHS Compliant: Meets environmental regulations and ensures the device is free from hazardous substances.
- Halogen and Antimony Free: Compliant with green device standards, making it suitable for environmentally friendly designs.
- Ultra-Small Surface Mount Package (SOT-363): Ideal for space-constrained applications.
Applications
- Motor Control: Suitable for motor drive applications due to its high efficiency and fast switching capabilities.
- Power Management Functions: Ideal for power management in various electronic systems, including DC-DC converters and power supplies.
- Automotive Applications: Can be used in automotive systems requiring high reliability and efficiency.
- General Purpose Switching: Useful in a wide range of switching applications where low on-resistance and fast switching are critical.
Q & A
- What is the maximum drain-source voltage (VDSS) of the 2N7002DWK-13?
The maximum drain-source voltage (VDSS) is 60V.
- What is the typical on-state resistance (RDS(ON)) of the 2N7002DWK-13?
The typical on-state resistance (RDS(ON)) is 3.0Ω at VGS = 10V and ID = 200mA.
- What is the gate threshold voltage (VGS(TH)) range for the 2N7002DWK-13?
The gate threshold voltage (VGS(TH)) range is 2 to 4V.
- What is the maximum continuous drain current (ID) at TA = +25°C?
The maximum continuous drain current (ID) at TA = +25°C is 261mA.
- Is the 2N7002DWK-13 RoHS compliant?
Yes, the 2N7002DWK-13 is fully RoHS compliant and lead-free.
- What package type is the 2N7002DWK-13 available in?
The 2N7002DWK-13 is available in the SOT-363 (SC-88) package.
- What are the typical turn-on and turn-off delay times for the 2N7002DWK-13?
The typical turn-on delay time (tD(ON)) is 5.85ns, and the typical turn-off delay time (tD(OFF)) is 12.5ns.
- Is the 2N7002DWK-13 ESD protected?
Yes, the 2N7002DWK-13 is ESD protected.
- What are some common applications for the 2N7002DWK-13?
Common applications include motor control, power management functions, automotive applications, and general-purpose switching.
- What is the input capacitance (Ciss) of the 2N7002DWK-13?
The input capacitance (Ciss) is 37.8 to 50pF at VDS = 25V, VGS = 0V, and f = 1.0 MHz.
