Overview
The FDMS3669S-SN00345, produced by onsemi, is a dual N-Channel MOSFET designed for high-efficiency power stage applications. This device features two specialized N-Channel MOSFETs in a dual PQFN package, optimized for synchronous buck converters. The internal connection of the switch node simplifies the placement and routing of these converters, enhancing overall system integration and efficiency.
Key Specifications
| Parameter | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| BVDSS (Drain to Source Breakdown Voltage) | ID = 250 μA, VGS = 0 V | - | - | 30 | V |
| VGS(th) (Gate to Source Threshold Voltage) | VGS = VDS, ID = 250 μA | 1.1 | 2 | 2.7 | V |
| RDS(on) (Drain to Source On Resistance) - Q1 | VGS = 10 V, ID = 13 A | 8.1 | 10 | 14.5 | mΩ |
| RDS(on) (Drain to Source On Resistance) - Q2 | VGS = 10 V, ID = 18 A | 2.8 | 5 | 7.1 | mΩ |
| Thermal Resistance, Junction to Ambient (RJA) | - | - | - | 125 | °C/W |
| Thermal Resistance, Junction to Case (RJC) | - | - | - | 5.0 | °C/W |
Key Features
- Dual N-Channel MOSFETs in a single PQFN package, optimized for synchronous buck converters.
- Internally connected switch node for easy placement and routing.
- Low RDS(on) for high power efficiency: Q1 (10 mΩ @ VGS = 10 V, ID = 13 A), Q2 (5 mΩ @ VGS = 10 V, ID = 18 A).
- High gate charge and low gate resistance for fast switching times.
- Integrated Schottky body diode for reduced reverse recovery time and leakage.
- Operating voltage up to 30 V.
Applications
- Synchronous buck converters in power supply units (PSUs).
- DC-DC converters for high-efficiency power management.
- Server and data center power systems.
- Telecom and networking equipment.
- Automotive and industrial power management systems.
Q & A
- What is the FDMS3669S-SN00345?
The FDMS3669S-SN00345 is a dual N-Channel MOSFET from onsemi, designed for high-efficiency power stage applications.
- What is the maximum drain to source breakdown voltage (BVDSS) of the FDMS3669S-SN00345?
The maximum BVDSS is 30 V.
- What are the typical RDS(on) values for Q1 and Q2?
For Q1, RDS(on) is typically 10 mΩ at VGS = 10 V, ID = 13 A. For Q2, RDS(on) is typically 5 mΩ at VGS = 10 V, ID = 18 A.
- What is the thermal resistance, junction to ambient (RJA), of the FDMS3669S-SN00345?
The thermal resistance, junction to ambient (RJA), is 125 °C/W.
- What are the key features of the integrated Schottky body diode in the FDMS3669S-SN00345?
The integrated Schottky body diode reduces reverse recovery time and leakage, similar to a discrete external Schottky diode.
- In what types of applications is the FDMS3669S-SN00345 commonly used?
Common applications include synchronous buck converters, DC-DC converters, server and data center power systems, telecom and networking equipment, and automotive and industrial power management systems.
- What is the operating voltage range of the FDMS3669S-SN00345?
The operating voltage range is up to 30 V.
- How does the internal connection of the switch node benefit the design?
The internal connection simplifies the placement and routing of synchronous buck converters, enhancing overall system integration and efficiency.
- What are the typical gate charge and gate resistance values for the FDMS3669S-SN00345?
The typical gate charge and gate resistance values are designed for fast switching times, with specific values detailed in the datasheet.
- How does the FDMS3669S-SN00345 improve power efficiency in applications?
The device improves power efficiency through low RDS(on) values, high gate charge, and low gate resistance, which contribute to reduced power losses during switching.
- Where can I find detailed specifications and typical characteristics of the FDMS3669S-SN00345?
Detailed specifications and typical characteristics can be found in the datasheet available on the onsemi website or through authorized distributors.
