PMDPB80XP,115
  • Share:

Nexperia USA Inc. PMDPB80XP,115

Manufacturer No:
PMDPB80XP,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 2.7A 6HUSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMDPB80XP,115 is a 20 V, dual P-channel Trench MOSFET produced by Nexperia USA Inc. This component is designed using Trench MOSFET technology and is housed in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. The device is optimized for low voltage gate drive with an RDSon of 102 mΩ at VGS = 4.5 V and 125 mΩ at VGS = 2.5 V. It features an exposed drain pad for excellent thermal conduction, making it suitable for various power management and switching applications.

Key Specifications

Parameter Value Unit
Type number PMDPB80XP -
Package DFN2020-6 (SOT1118) -
Channel type P -
Number of transistors 2 -
VDS [max] -20 V
VGS [max] 12 V
RDSon [max] @ VGS = 4.5 V; @25°C 102
RDSon [max] @ VGS = 2.5 V 125
Tj [max] 150 °C
ID [max] -3.7 A
QGD [typ] 0.96 nC
QG(tot) [typ] @ VGS = 4.5 V 5.7 nC
Ptot [max] 0.485 W
VGSth [typ] -0.6 V
Ciss [typ] 550 pF
Coss [typ] 63 pF

Key Features

  • Trench MOSFET technology for enhanced performance and efficiency.
  • Low RDSon of 102 mΩ at VGS = 4.5 V and 125 mΩ at VGS = 2.5 V for low voltage gate drive.
  • Small and leadless ultra thin DFN2020-6 (SOT1118) SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction.
  • RoHS compliant and lead-free.
  • High maximum junction temperature (Tj) of 150°C.

Applications

  • Charging switch for portable devices.
  • DC/DC converters.
  • Small brushless DC motor drive.
  • Power management in battery-driven portables.
  • Hard disc and computing power management.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMDPB80XP?

    The maximum drain-source voltage (VDS) is -20 V.

  2. What is the typical threshold voltage (VGSth) of the PMDPB80XP?

    The typical threshold voltage (VGSth) is -0.6 V.

  3. What is the maximum junction temperature (Tj) of the PMDPB80XP?

    The maximum junction temperature (Tj) is 150°C.

  4. What is the package type of the PMDPB80XP?

    The package type is DFN2020-6 (SOT1118), a small and leadless ultra thin SMD plastic package.

  5. Is the PMDPB80XP RoHS compliant?
  6. What are some typical applications of the PMDPB80XP?

    Typical applications include charging switches for portable devices, DC/DC converters, small brushless DC motor drives, power management in battery-driven portables, and hard disc and computing power management.

  7. What is the maximum continuous drain current (ID) of the PMDPB80XP?

    The maximum continuous drain current (ID) is -3.7 A.

  8. What is the typical gate charge (QGD) of the PMDPB80XP?

    The typical gate charge (QGD) is 0.96 nC.

  9. What is the maximum total power dissipation (Ptot) of the PMDPB80XP?

    The maximum total power dissipation (Ptot) is 0.485 W.

  10. How many transistors are in the PMDPB80XP?

    The PMDPB80XP contains 2 P-channel transistors.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.7A
Rds On (Max) @ Id, Vgs:102mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:550pF @ 10V
Power - Max:485mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UFDFN Exposed Pad
Supplier Device Package:6-HUSON (2x2)
0 Remaining View Similar

In Stock

$0.15
5,385

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMDPB80XP,115 PMDPB70XP,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate, 1.8V Drive Logic Level Gate
Drain to Source Voltage (Vdss) 20V 30V
Current - Continuous Drain (Id) @ 25°C 2.7A 2.9A
Rds On (Max) @ Id, Vgs 102mOhm @ 2.7A, 4.5V 87mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V 7.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 10V 680pF @ 15V
Power - Max 485mW 490mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2) 6-HUSON (2x2)

Related Product By Categories

NTJD4401NT1G
NTJD4401NT1G
onsemi
MOSFET 2N-CH 20V 630MA SOT363
NTMFD4C20NT1G
NTMFD4C20NT1G
onsemi
MOSFET 2N-CH 30V SO8FL
2N7002BKS,115
2N7002BKS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.3A 6TSSOP
FDS8858CZ
FDS8858CZ
onsemi
MOSFET N/P-CH 30V 8.6/7.3A 8SOIC
BUK7K15-80EX
BUK7K15-80EX
Nexperia USA Inc.
MOSFET 2 N-CH 80V 23A LFPAK56D
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
FDMC8200
FDMC8200
onsemi
MOSFET 2N-CH 30V 8A/12A 8POWER33
FDMQ8203
FDMQ8203
onsemi
MOSFET 2N/2P-CH 100V/80V 12-MLP
NX7002BKW,115
NX7002BKW,115
Nexperia USA Inc.
0.24A, 60V, N CHANNEL MOSFET, SC
STS8C5H30L
STS8C5H30L
STMicroelectronics
MOSFET N/P-CH 30V 8A/5.4A 8SOIC
2N7002DW-7
2N7002DW-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.23A SOT-363
2N7002DW-7-F-79
2N7002DW-7-F-79
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363

Related Product By Brand

BAT54S-QR
BAT54S-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAS316/DG/B3,135
BAS316/DG/B3,135
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
BZX84-C3V3/DG/B3,2
BZX84-C3V3/DG/B3,2
Nexperia USA Inc.
DIODE ZENER 3.3V 250MW TO236AB
BC846AW,135
BC846AW,135
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BC857-QR
BC857-QR
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
74AVCH8T245PW,112
74AVCH8T245PW,112
Nexperia USA Inc.
IC TRANSLATION TXRX 3.6V 24TSSOP
74HC2GU04GW-Q100H
74HC2GU04GW-Q100H
Nexperia USA Inc.
IC INVERTER 2CH 2-INP 6TSSOP
74HCT373PW-Q100,11
74HCT373PW-Q100,11
Nexperia USA Inc.
IC TRANSP LATCH OCT D 20TSSOP
BZV55-C39
BZV55-C39
Nexperia USA Inc.
BZV55 SERIES - VOLTAGE REGULATOR