NTMD4820NR2G
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onsemi NTMD4820NR2G

Manufacturer No:
NTMD4820NR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 4.9A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTMD4820NR2G is a dual N-Channel power MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in a SOIC-8 surface mount package, which helps in saving board space. It features low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and optimized gate charge to minimize switching losses. These characteristics make it an ideal choice for various power management and switching applications.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 6.4 A
Continuous Drain Current (TA = 70°C) ID 5.1 A
Power Dissipation (TA = 25°C) PD 1.28 W
Pulsed Drain Current (tp = 10 μs) IDM 32 A
Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C
Source Current (Body Diode) IS 2.0 A
Single Pulse Drain-to-Source Avalanche Energy EAS 60.5 mJ
Lead Temperature for Soldering Purposes TL 260 °C
Junction-to-Ambient Thermal Resistance (Steady State) RθJA 97.5 °C/W
Gate Threshold Voltage VGS(TH) 1.5 - 3.0 V
Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V RDS(on) 15 - 20

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Dual SOIC-8 surface mount package for space savings
  • High continuous drain current and pulsed drain current capabilities
  • Wide operating junction and storage temperature range
  • Low gate threshold voltage and negative threshold temperature coefficient

Applications

  • Disk Drives
  • DC-DC Converters
  • Printers

Q & A

  1. What is the maximum drain-to-source voltage of the NTMD4820NR2G?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C and 70°C?

    The continuous drain current is 6.4 A at 25°C and 5.1 A at 70°C.

  3. What is the power dissipation at 25°C?

    The power dissipation (PD) is 1.28 W at 25°C.

  4. What is the pulsed drain current for a pulse width of 10 μs?

    The pulsed drain current (IDM) is 32 A for a pulse width of 10 μs.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is −55 to +150 °C.

  6. What is the single pulse drain-to-source avalanche energy?

    The single pulse drain-to-source avalanche energy (EAS) is 60.5 mJ.

  7. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes (TL) is 260 °C.

  8. What is the junction-to-ambient thermal resistance in steady state?

    The junction-to-ambient thermal resistance (RθJA) is 97.5 °C/W in steady state.

  9. What are the typical applications of the NTMD4820NR2G?

    The typical applications include disk drives, DC-DC converters, and printers.

  10. What are the key features of the NTMD4820NR2G?

    The key features include low RDS(on), low capacitance, optimized gate charge, and a dual SOIC-8 surface mount package.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:4.9A
Rds On (Max) @ Id, Vgs:20mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:940pF @ 15V
Power - Max:750mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number NTMD4820NR2G NTMD4840NR2G
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 4.9A 4.5A
Rds On (Max) @ Id, Vgs 20mOhm @ 7.5A, 10V 24mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V 9.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 15V 520pF @ 15V
Power - Max 750mW 680mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC

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