Overview
The NTMD4820NR2G is a dual N-Channel power MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in a SOIC-8 surface mount package, which helps in saving board space. It features low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and optimized gate charge to minimize switching losses. These characteristics make it an ideal choice for various power management and switching applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 6.4 | A |
| Continuous Drain Current (TA = 70°C) | ID | 5.1 | A |
| Power Dissipation (TA = 25°C) | PD | 1.28 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 32 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to +150 | °C |
| Source Current (Body Diode) | IS | 2.0 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 60.5 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Ambient Thermal Resistance (Steady State) | RθJA | 97.5 | °C/W |
| Gate Threshold Voltage | VGS(TH) | 1.5 - 3.0 | V |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V | RDS(on) | 15 - 20 | mΩ |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Dual SOIC-8 surface mount package for space savings
- High continuous drain current and pulsed drain current capabilities
- Wide operating junction and storage temperature range
- Low gate threshold voltage and negative threshold temperature coefficient
Applications
- Disk Drives
- DC-DC Converters
- Printers
Q & A
- What is the maximum drain-to-source voltage of the NTMD4820NR2G?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current at 25°C and 70°C?
The continuous drain current is 6.4 A at 25°C and 5.1 A at 70°C.
- What is the power dissipation at 25°C?
The power dissipation (PD) is 1.28 W at 25°C.
- What is the pulsed drain current for a pulse width of 10 μs?
The pulsed drain current (IDM) is 32 A for a pulse width of 10 μs.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +150 °C.
- What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 60.5 mJ.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes (TL) is 260 °C.
- What is the junction-to-ambient thermal resistance in steady state?
The junction-to-ambient thermal resistance (RθJA) is 97.5 °C/W in steady state.
- What are the typical applications of the NTMD4820NR2G?
The typical applications include disk drives, DC-DC converters, and printers.
- What are the key features of the NTMD4820NR2G?
The key features include low RDS(on), low capacitance, optimized gate charge, and a dual SOIC-8 surface mount package.
