ECH8667-TL-HX-SA
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Sanyo ECH8667-TL-HX-SA

Manufacturer No:
ECH8667-TL-HX-SA
Manufacturer:
Sanyo
Package:
Bulk
Description:
P-CHANNEL SILICON MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ECH8667-TL-HX-SA is a P-Channel Power MOSFET produced by Sanyo, now part of ON Semiconductor. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a dual ECH8 package and is known for its reliability and efficiency in various power management scenarios.

Key Specifications

ParameterSymbolConditionsRatingsUnit
Drain-to-Source VoltageVDSS---30V
Gate-to-Source VoltageVGSS--±20V
Drain Current (DC)ID---5.5A
Drain Current (Pulse)IDPPW≤10μs, duty cycle≤1%-40A
Allowable Power DissipationPDWhen mounted on ceramic substrate (900mm²×0.8mm)1.3W
Total DissipationPTWhen mounted on ceramic substrate (900mm²×0.8mm)1.5W
Channel TemperatureTch--150°C
Storage TemperatureTstg---55 to +150°C
Static Drain-to-Source On-State ResistanceRDS(on)1ID=-2.5A, VGS=-10V30-39
Input CapacitanceCissVDS=-10V, f=1MHz600pF
Output CapacitanceCoss--145pF
Reverse Transfer CapacitanceCrss--110pF

Key Features

  • Low On-Resistance: The ECH8667-TL-HX-SA features a low on-resistance (RDS(on)) of 30-39 mΩ, making it suitable for high-efficiency power management applications.
  • 4V Drive Capability: This MOSFET can be driven with a gate voltage as low as 4V, enhancing its compatibility with various control circuits.
  • Halogen Free Compliance: The device is halogen-free, aligning with environmental and safety standards.
  • Protection Diode: It includes an integrated protection diode, providing additional safety against reverse current.
  • High Current Handling: The MOSFET can handle a DC drain current of up to -5.5A and a pulse current of up to -40A (PW≤10μs, duty cycle≤1%).

Applications

The ECH8667-TL-HX-SA is versatile and can be used in a variety of applications, including:

  • Power Supply Systems: Suitable for DC-DC converters, power adapters, and other power supply systems due to its high efficiency and low on-resistance.
  • Motor Control: Used in motor drive circuits for its ability to handle high currents and provide efficient switching.
  • Automotive Systems: Can be applied in automotive electronics for power management and control.
  • Industrial Control Systems: Ideal for use in industrial control systems requiring reliable and efficient power management.

Q & A

  1. What is the maximum drain-to-source voltage of the ECH8667-TL-HX-SA?
    The maximum drain-to-source voltage (VDSS) is -30V.
  2. What is the typical on-resistance of the ECH8667-TL-HX-SA?
    The typical on-resistance (RDS(on)) is 30-39 mΩ.
  3. Can the ECH8667-TL-HX-SA be driven with a low gate voltage?
    Yes, it can be driven with a gate voltage as low as 4V.
  4. Is the ECH8667-TL-HX-SA halogen-free?
    Yes, the device is halogen-free.
  5. What is the maximum DC drain current of the ECH8667-TL-HX-SA?
    The maximum DC drain current (ID) is -5.5A.
  6. What is the maximum pulse current of the ECH8667-TL-HX-SA?
    The maximum pulse current (IDP) is -40A (PW≤10μs, duty cycle≤1%).
  7. What is the storage temperature range of the ECH8667-TL-HX-SA?
    The storage temperature range (Tstg) is -55 to +150°C.
  8. What is the channel temperature of the ECH8667-TL-HX-SA?
    The channel temperature (Tch) is up to 150°C.
  9. Does the ECH8667-TL-HX-SA include an integrated protection diode?
    Yes, it includes an integrated protection diode.
  10. What are some common applications of the ECH8667-TL-HX-SA?
    Common applications include power supply systems, motor control, automotive systems, and industrial control systems.

Product Attributes

FET Type:- 
FET Feature:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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