Overview
The 2N7002DWKX-13 is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The MOSFET features a low gate threshold voltage, low input capacitance, and fast switching speed, which are crucial for efficient operation in various electronic systems.
Key Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 10µA |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Continuous Drain Current | ID | 261 mA (TA = +25°C), 208 mA (TA = +70°C) | VGS = 10V, Steady State | |
| Maximum Continuous Body Diode Forward Current | IS | 261 mA | ||
| Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) | IDM | 1.1 A | ||
| Gate Threshold Voltage | VGS(TH) | 1.0 - 2.0 V | VDS = VGS, ID = 250µA | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.0 Ω @ VGS = 10V, 4.0 Ω @ VGS = 4.5V | Ω | VGS = 10V, ID = 0.5A; VGS = 4.5V, ID = 0.226A |
| Input Capacitance | Ciss | 22 - 50 pF | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Turn-On Delay Time | tD(ON) | 7.0 - 20 ns | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω |
| Turn-Off Delay Time | tD(OFF) | 11.0 - 20 ns | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω |
Key Features
- Dual N-Channel MOSFET
- Low On-Resistance (RDS(ON))
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Ultra-Small Surface Mount Package (SOT363)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable
Applications
- Motor Control
- Power Management Functions
- High-Efficiency Power Management Applications
- Automotive Applications (specifically for those requiring AEC-Q100/101/200 qualification)
Q & A
- What is the maximum drain-source breakdown voltage of the 2N7002DWKX-13?
The maximum drain-source breakdown voltage (BVDSS) is 60V.
- What is the typical on-state resistance (RDS(ON)) of the 2N7002DWKX-13?
The typical on-state resistance (RDS(ON)) is 3.0 Ω at VGS = 10V and 4.0 Ω at VGS = 4.5V.
- What are the key features of the 2N7002DWKX-13 MOSFET?
The key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.
- Is the 2N7002DWKX-13 MOSFET RoHS compliant?
Yes, the 2N7002DWKX-13 is totally lead-free and fully RoHS compliant.
- What are the typical applications of the 2N7002DWKX-13?
The typical applications include motor control, power management functions, and high-efficiency power management applications.
- What is the maximum continuous drain current of the 2N7002DWKX-13 at TA = +25°C?
The maximum continuous drain current (ID) is 261 mA at TA = +25°C.
- Does the 2N7002DWKX-13 have ESD protection?
Yes, the 2N7002DWKX-13 has ESD protection.
- What is the package type of the 2N7002DWKX-13?
The package type is SOT363, an ultra-small surface mount package.
- Is the 2N7002DWKX-13 qualified for automotive applications?
Yes, it is qualified to AEC-Q101 standards for high reliability and is suitable for automotive applications requiring specific change control.
- What is the operating junction temperature range of the 2N7002DWKX-13?
The operating junction temperature range is -55°C to +150°C.
