Overview
The FDC6561AN is a dual N-Channel Logic Level MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This device is designed to minimize on-state resistance while maintaining low gate charge, ensuring superior switching performance. It is particularly suited for applications where small size and low cost are critical, such as in battery-powered systems and DC/DC conversion.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDSS (Drain-Source Voltage) | - | - | - | 30 | V |
| VGSS (Gate-Source Voltage) | - Continuous | - | - | ±20 | V |
| ID (Drain Current) | - Continuous | - | - | 2.5 | A |
| ID (Drain Current) | - Pulsed | - | - | 10 | A |
| PD (Maximum Power Dissipation) | - | - | - | 0.96 | W |
| TJ, TSTG (Operating and Storage Temperature Range) | - | -55 | - | 150 | °C |
| RDS(ON) (Static Drain-Source On-Resistance) | VGS = 10 V, ID = 2.5 A | - | 0.082 | 0.095 | Ω |
| RDS(ON) (Static Drain-Source On-Resistance) | VGS = 4.5 V, ID = 2.0 A | - | 0.113 | 0.145 | Ω |
| VGS(th) (Gate Threshold Voltage) | VDS = VGS, ID = 250 μA | 1 | 1.8 | 3 | V |
| Qg (Total Gate Charge) | VDS = 15 V, ID = 2.5 A, VGS = 5 V | - | 2.3 | 3.2 | nC |
Key Features
- 2.5 A, 30 V rating, making it suitable for various power management applications.
- Low on-state resistance (RDS(ON)) of 0.095 Ω at VGS = 10 V and 0.145 Ω at VGS = 4.5 V.
- Very fast switching with low gate charge (2.1 nC typical), enhancing efficiency in high-frequency applications.
- SUPERSOT-6 package: small footprint (72% smaller than standard SO-8) and low profile (1 mm thick), ideal for space-constrained designs.
- Pb-Free device, compliant with environmental regulations.
Applications
- DC/DC conversion in battery-powered systems.
- Motor driver applications due to its low on-resistance and fast switching capabilities.
- General power management in small form factor devices.
- Any application requiring low cost, small size, and high efficiency.
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDC6561AN?
The maximum drain-source voltage (VDSS) is 30 V.
- What is the continuous drain current (ID) rating of the FDC6561AN?
The continuous drain current (ID) rating is 2.5 A.
- What is the typical on-state resistance (RDS(ON)) at VGS = 10 V?
The typical on-state resistance (RDS(ON)) at VGS = 10 V is 0.082 Ω.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is from 1 V to 3 V.
- What is the total gate charge (Qg) at VDS = 15 V and ID = 2.5 A?
The total gate charge (Qg) at VDS = 15 V and ID = 2.5 A is typically 2.3 nC.
- What package type is the FDC6561AN available in?
The FDC6561AN is available in the SUPERSOT-6 package.
- Is the FDC6561AN Pb-Free?
- What are the operating and storage temperature ranges for the FDC6561AN?
The operating and storage temperature range is from -55°C to 150°C.
- What are some typical applications for the FDC6561AN?
Typical applications include DC/DC conversion in battery-powered systems, motor driver applications, and general power management in small form factor devices.
- What is the maximum power dissipation (PD) for the FDC6561AN?
The maximum power dissipation (PD) is 0.96 W.
