NTZD3155CT2G
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onsemi NTZD3155CT2G

Manufacturer No:
NTZD3155CT2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 20V SOT-563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTZD3155CT2G is a small signal MOSFET produced by onsemi, designed to offer high performance and reliability in various electronic applications. This component is part of onsemi's portfolio of MOSFETs that utilize leading trench technology to achieve low RDS(on) performance. The NTZD3155CT2G is particularly noted for its complementary configuration, which includes both N-channel and P-channel MOSFETs, and it features built-in ESD protection.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 20 V
ID (Continuous Drain Current) 540 mA (N-channel), -430 mA (P-channel) mA
RDS(on) (On-Resistance) Typically low, specific values depend on VGS Ω
VGS(th) (Threshold Voltage) 0.5 to 1.5 V (N-channel), -0.5 to -1.5 V (P-channel) V
Package SOT-563 (CASE 463A) -
ESD Protection Yes -

Key Features

  • Leading Trench Technology: Ensures low RDS(on) performance for efficient operation.
  • Complementary Configuration: Includes both N-channel and P-channel MOSFETs for balanced performance.
  • ESD Protection: Built-in protection against electrostatic discharge.
  • Surface Mount Package: SOT-563 package for easy integration into surface mount designs.

Applications

The NTZD3155CT2G is suitable for a variety of applications, including:

  • General-purpose switching and amplification.
  • Audio and video switching.
  • Low-power DC-DC converters.
  • Automotive and industrial control systems.

Q & A

  1. What is the maximum drain-source voltage for the NTZD3155CT2G?

    The maximum drain-source voltage (VDS) is 20 V.

  2. What are the continuous drain current ratings for the N-channel and P-channel MOSFETs?

    The continuous drain current (ID) is 540 mA for the N-channel and -430 mA for the P-channel.

  3. What is the typical on-resistance (RDS(on)) of the NTZD3155CT2G?

    The on-resistance is typically low, with specific values depending on the gate-source voltage (VGS).

  4. Does the NTZD3155CT2G have built-in ESD protection?

    Yes, the NTZD3155CT2G includes built-in ESD protection.

  5. What package type is used for the NTZD3155CT2G?

    The NTZD3155CT2G is packaged in a SOT-563 (CASE 463A) package..

  6. What are some common applications for the NTZD3155CT2G?

    Common applications include general-purpose switching and amplification, audio and video switching, low-power DC-DC converters, and automotive and industrial control systems.

  7. What is the threshold voltage range for the NTZD3155CT2G?

    The threshold voltage (VGS(th)) range is 0.5 to 1.5 V for the N-channel and -0.5 to -1.5 V for the P-channel.

  8. Is the NTZD3155CT2G suitable for surface mount assembly?

    Yes, the SOT-563 package is designed for surface mount assembly..

  9. Where can I find detailed specifications for the NTZD3155CT2G?

    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser Electronics..

  10. What is the significance of the 'T2G' suffix in the part number NTZD3155CT2G?

    The 'T2G' suffix typically indicates the packaging and handling details, such as tape and reel packaging, but specific details should be verified from the datasheet or manufacturer's documentation..

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:540mA, 430mA
Rds On (Max) @ Id, Vgs:550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:150pF @ 16V
Power - Max:250mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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Same Series
NTZD3155CT1G
NTZD3155CT1G
MOSFET N/P-CH 20V SOT-563
NTZD3155CT5G
NTZD3155CT5G
MOSFET N/P-CH 20V SOT-563

Similar Products

Part Number NTZD3155CT2G NTZD3155CT5G NTZD3156CT2G NTZD3155CT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Active
FET Type N and P-Channel N and P-Channel N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V 20V 20V
Current - Continuous Drain (Id) @ 25°C 540mA, 430mA 540mA, 430mA 540mA, 430mA 540mA, 430mA
Rds On (Max) @ Id, Vgs 550mOhm @ 540mA, 4.5V 550mOhm @ 540mA, 4.5V 550mOhm @ 540mA, 4.5V 550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V 2.5nC @ 4.5V 2.5nC @ 4.5V 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V 150pF @ 16V 72pF @ 16V 150pF @ 16V
Power - Max 250mW 250mW 250mW 250mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563 SOT-563

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