FDMD8560L
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onsemi FDMD8560L

Manufacturer No:
FDMD8560L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 46V 22A POWER
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMD8560L is a dual N-Channel PowerTrench® MOSFET produced by onsemi. This device features two 60V N-Channel MOSFETs packaged in a compact 5 mm x 6 mm dual power package. The internal configuration includes an HS (high-side) source and an LS (low-side) drain, which are internally connected, making it suitable for half-bridge and full-bridge configurations.

Key Specifications

SpecificationValue
Drain to Source Voltage (Vdss)60V
Continuous Drain Current (Id)22A
Pulse Drain Current (Idp)93A
On-Resistance (Rds(on))Typically 10mΩ
Package TypeSurface Mount 8-Power 5x6
FET Type2 N-Channel (Half Bridge)

Key Features

The FDMD8560L offers several key features that make it a versatile and efficient choice for various applications. These include:

  • Compact Package: The 5 mm x 6 mm package size makes it ideal for space-constrained designs.
  • High Current Capability: With a continuous drain current of 22A and a pulse drain current of 93A, it can handle high current requirements.
  • Low On-Resistance: The device has a low on-resistance of typically 10mΩ, which minimizes power losses.
  • Internal Configuration: The internal connection of the HS source and LS drain simplifies the design of half-bridge and full-bridge configurations.

Applications

The FDMD8560L is suitable for a variety of applications due to its robust specifications and features. Some common applications include:

  • Power Supplies: DC-DC converters, power factor correction (PFC) circuits, and other power supply applications benefit from its high current and low on-resistance.
  • Motor Control: The device is used in motor control circuits, including half-bridge and full-bridge configurations for driving motors efficiently.
  • Industrial and Automotive Systems: It is also used in industrial and automotive systems where high reliability and performance are required.

Q & A

  1. What is the drain to source voltage (Vdss) of the FDMD8560L?
    The drain to source voltage (Vdss) of the FDMD8560L is 60V.
  2. What is the continuous drain current (Id) of the FDMD8560L?
    The continuous drain current (Id) of the FDMD8560L is 22A.
  3. What is the pulse drain current (Idp) of the FDMD8560L?
    The pulse drain current (Idp) of the FDMD8560L is 93A.
  4. What is the typical on-resistance (Rds(on)) of the FDMD8560L?
    The typical on-resistance (Rds(on)) of the FDMD8560L is 10mΩ.
  5. What type of package does the FDMD8560L come in?
    The FDMD8560L comes in a surface mount 8-Power 5x6 package.
  6. What is the internal configuration of the FDMD8560L?
    The FDMD8560L has an internal configuration with an HS source and an LS drain, which are internally connected for half-bridge and full-bridge configurations.
  7. What are some common applications of the FDMD8560L?
    The FDMD8560L is commonly used in power supplies, motor control circuits, and industrial and automotive systems.
  8. What is the benefit of the low on-resistance in the FDMD8560L?
    The low on-resistance minimizes power losses, making the device more efficient in high current applications.
  9. How does the compact package size benefit the design?
    The compact 5 mm x 6 mm package size makes it ideal for space-constrained designs, allowing for more compact and efficient system layouts.
  10. Where can I find detailed specifications for the FDMD8560L?
    Detailed specifications for the FDMD8560L can be found on the onsemi website, as well as on distributor sites such as Digi-Key and Mouser.

Product Attributes

FET Type:2 N-Channel (Half Bridge)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:22A, 93A
Rds On (Max) @ Id, Vgs:3.2mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:128nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:11130pF @ 30V
Power - Max:2.2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-Power 5x6
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Similar Products

Part Number FDMD8560L FDMD8260L FDMD8540L
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Last Time Buy Obsolete
FET Type 2 N-Channel (Half Bridge) 2 N-Channel (Dual) 2 N-Channel (Half Bridge)
FET Feature Standard Standard Standard
Drain to Source Voltage (Vdss) 60V 60V 40V
Current - Continuous Drain (Id) @ 25°C 22A, 93A 15A 33A, 156A
Rds On (Max) @ Id, Vgs 3.2mOhm @ 22A, 10V 5.8mOhm @ 15A, 10V 1.5mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V 68nC @ 10V 113nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 11130pF @ 30V 5245pF @ 30V 7940pF @ 20V
Power - Max 2.2W 1W 2.3W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerWDFN 12-PowerWDFN 8-PowerWDFN
Supplier Device Package 8-Power 5x6 12-Power3.3x5 8-Power 5x6

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