NTLJD3115PT1G
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onsemi NTLJD3115PT1G

Manufacturer No:
NTLJD3115PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 2.3A 6-WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi NTD360N80S3Z is a high-speed, high-power density N-Channel MOSFET designed for power electronics applications. It features ultra-low gate charge, low stored energy in output capacitance, optimized capacitance, and improved ESD capability with a Zener diode. This device operates at 800 V with a maximum junction temperature of 150°C, making it suitable for various demanding power electronics applications.

Key Specifications

CategorySpecification
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C13 A (Tc)
Rds On (Max) @ Id, Vgs360 mΩ @ 6.5 A, 10 V
Gate Charge (Qg) (Max) @ Vgs25.3 nC @ 10 V
Vgs(th) (Max) @ Id3.8 V @ 300 µA
Input Capacitance (Ciss) (Max) @ Vds1143 pF @ 400 V
Power Dissipation (Max)96 W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/CaseTO-252-3, DPAK (2 Leads + Tab), SC-63

Key Features

  • 900 V @ Tj = 150 °C
  • Ultra Low Gate Charge (Typ. Qg = 25.3 nC)
  • Low Stored Energy in Output Capacitance (Eoss = 2.72 µJ @ 400 V)
  • Optimized capacitance
  • ESD Improved Capability with Zener Diode
  • Typical RDS(on) = 300 mΩ
  • RoHS Compliant
  • 100% Avalanche Tested
  • Internal Gate Resistance: 4 Ω

Applications

The NTD360N80S3Z is suitable for various applications, including customized drive systems, robust power supplies, seamless control integration, integrated automation systems, sustainable energy solutions, efficient power management, precision control equipment, reliable power sources, high-performance inverters, and eco-friendly energy solutions.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the NTD360N80S3Z?
    The maximum drain to source voltage (Vdss) is 800 V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 13 A.
  3. What is the typical gate charge (Qg) of the NTD360N80S3Z?
    The typical gate charge (Qg) is 25.3 nC at 10 V.
  4. What are the package types available for the NTD360N80S3Z?
    The package types available are TO-252-3, DPAK (2 Leads + Tab), and SC-63.
  5. Is the NTD360N80S3Z RoHS compliant?
    Yes, the NTD360N80S3Z is RoHS compliant.
  6. What is the maximum operating temperature of the NTD360N80S3Z?
    The maximum operating temperature is 150°C (TJ).
  7. What is the power dissipation capability of the NTD360N80S3Z?
    The maximum power dissipation is 96 W (Tc).
  8. What are some of the key applications of the NTD360N80S3Z?
    Key applications include customized drive systems, robust power supplies, seamless control integration, and sustainable energy solutions.
  9. Does the NTD360N80S3Z have improved ESD capability?
    Yes, it has improved ESD capability with a Zener diode.
  10. Is the NTD360N80S3Z 100% avalanche tested?
    Yes, the NTD360N80S3Z is 100% avalanche tested.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.3A
Rds On (Max) @ Id, Vgs:100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:531pF @ 10V
Power - Max:710mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-WDFN Exposed Pad
Supplier Device Package:6-WDFN (2x2)
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In Stock

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Same Series
NTLJD3115PTAG
NTLJD3115PTAG
MOSFET 2P-CH 20V 2.3A 6-WDFN

Similar Products

Part Number NTLJD3115PT1G NTLJD3115PTAG
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 2.3A 2.3A
Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 4.5V 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V 6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 531pF @ 10V 531pF @ 10V
Power - Max 710mW 710mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)

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