FDG6316P
  • Share:

onsemi FDG6316P

Manufacturer No:
FDG6316P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 12V 0.7A SC70-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDG6316P is a P-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance and enhance overall performance. The device is part of onsemi's logic level MOSFET family, making it suitable for a variety of applications requiring low voltage and high current handling capabilities.

Key Specifications

ParameterValue
Transistor PolarityP-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage12 V
Id - Continuous Drain Current700 mA
Vgs(th) - Threshold Voltage-0.8 to -2.5 V
Rds(on) - On-State ResistanceTypically 0.18 Ω at Vgs = -4.5 V

Key Features

  • Advanced POWERTRENCH process for low on-state resistance
  • Logic level gate drive for easy interface with microcontrollers and logic circuits
  • High current handling capability of up to 700 mA
  • Low threshold voltage range of -0.8 to -2.5 V
  • Compact package suitable for space-constrained designs

Applications

  • Power management in portable electronics and battery-powered devices
  • DC-DC converters and switching power supplies
  • Motor control and drive circuits
  • Audio and video switching applications
  • General-purpose switching in industrial and consumer electronics

Q & A

  1. What is the transistor polarity of the FDG6316P? The FDG6316P is a P-Channel MOSFET.
  2. What is the maximum drain-source breakdown voltage of the FDG6316P? The maximum drain-source breakdown voltage is 12 V.
  3. What is the continuous drain current rating of the FDG6316P? The continuous drain current rating is 700 mA.
  4. What is the typical on-state resistance of the FDG6316P? The typical on-state resistance is 0.18 Ω at Vgs = -4.5 V.
  5. What is the threshold voltage range of the FDG6316P? The threshold voltage range is -0.8 to -2.5 V.
  6. Is the FDG6316P suitable for high-frequency applications? Yes, the FDG6316P is suitable for high-frequency applications due to its low on-state resistance and fast switching times.
  7. Can the FDG6316P be used in power management circuits? Yes, the FDG6316P is commonly used in power management circuits, including DC-DC converters and switching power supplies.
  8. What package types are available for the FDG6316P? The FDG6316P is available in compact packages suitable for space-constrained designs.
  9. Is the FDG6316P compatible with microcontrollers? Yes, the FDG6316P is designed for logic level gate drive, making it compatible with microcontrollers and other logic circuits.
  10. What are some common applications of the FDG6316P? Common applications include power management, motor control, audio and video switching, and general-purpose switching in industrial and consumer electronics.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):12V
Current - Continuous Drain (Id) @ 25°C:700mA
Rds On (Max) @ Id, Vgs:270mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:146pF @ 6V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
0 Remaining View Similar

In Stock

$0.44
1,579

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDG6316P FDG6318P FDG6306P FDG6314P
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Standard
Drain to Source Voltage (Vdss) 12V 20V 20V 25V
Current - Continuous Drain (Id) @ 25°C 700mA 500mA 600mA -
Rds On (Max) @ Id, Vgs 270mOhm @ 700mA, 4.5V 780mOhm @ 500mA, 4.5V 420mOhm @ 600mA, 4.5V -
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 4.5V 1.2nC @ 4.5V 2nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 146pF @ 6V 83pF @ 10V 114pF @ 10V -
Power - Max 300mW 300mW 300mW -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88 (SC-70-6) SC-88 (SC-70-6) SC-88 (SC-70-6) SC-88 (SC-70-6)

Related Product By Categories

NTUD3170NZT5G
NTUD3170NZT5G
onsemi
MOSFET 2N-CH 20V 0.22A SOT-963
IPG20N04S4L08ATMA1
IPG20N04S4L08ATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
PMDPB56XNEAX
PMDPB56XNEAX
Nexperia USA Inc.
MOSFET 2N-CH 30V 3.1A DFN2020D-6
PMGD290XN,115
PMGD290XN,115
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.86A 6TSSOP
PMDPB70XPE,115
PMDPB70XPE,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 3A 6HUSON
NX3008NBKSH
NX3008NBKSH
Nexperia USA Inc.
MOSFET 2 N-CH 30V 350MA 6TSSOP
NVMFD5C680NLT1G
NVMFD5C680NLT1G
onsemi
MOSFET 2N-CH 60V 26A S08FL
STL15DN4F5
STL15DN4F5
STMicroelectronics
MOSFET 2N-CH 40V 60A POWERFLAT
NVMFD5C478NLT1G
NVMFD5C478NLT1G
onsemi
40V 14.5 MOHM T8 S08FL DU
FDS4897AC
FDS4897AC
onsemi
MOSFET N/P-CH 40V 6.1A/5.2A 8SO
NVMFD5873NLT1G
NVMFD5873NLT1G
onsemi
MOSFET 2N-CH 60V 10A SO8FL
PMGD175XNEAX
PMGD175XNEAX
Nexperia USA Inc.
MOSFET 2 N-CH 30V 900MA SOT363

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE