NX7002BKXBZ
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Nexperia USA Inc. NX7002BKXBZ

Manufacturer No:
NX7002BKXBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.26A 6DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX7002BKXBZ is a 60 V, dual N-channel Trench MOSFET produced by Nexperia USA Inc. This component is designed in a leadless ultra small and ultra thin SMD plastic package, specifically the DFN1010B-6 (SOT1216) package, measuring 1.1 x 1.0 x 0.37 mm. It utilizes Trench MOSFET technology, offering high efficiency and reliability in various electronic applications.

Key Specifications

Parameter Value
Type number NX7002BKXB
Package version DFN1010B-6 (SOT1216)
Channel type N (Dual N-channel)
Number of transistors 2
VDS [max] (V) 60
VGS [max] (V) 20
RDSon [max] @ VGS = 10 V (mΩ) 2800
RDSon [max] @ VGS = 5 V (mΩ) 3200
VESD (kV) (HBM) > 2 kV
Tj [max] (°C) 150
ID [max] (A) 0.33
QGD [typ] (nC) 0.18
QG(tot) [typ] @ VGS = 10 V (nC) 1
Ptot [max] (W) 1.6
VGSth [typ] (V) 0.285
Ciss [typ] (pF) 23.6
Coss [typ] (pF) 4.6
Release date 2014-12-15

Key Features

  • Logic-level compatible: Ensures compatibility with a wide range of logic levels.
  • Leadless ultra small and ultra thin SMD plastic package: The DFN1010B-6 (SOT1216) package measures 1.1 x 1.0 x 0.37 mm, making it ideal for space-constrained designs.
  • Trench MOSFET technology: Offers high efficiency, low on-resistance, and fast switching times.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM: Provides robust protection against ESD events.

Applications

  • Relay driver: Suitable for driving relays in various applications.
  • High-speed line driver: Ideal for high-speed line driving due to its fast switching capabilities.
  • Low-side loadswitch: Can be used as a low-side switch in load switching applications.
  • Switching circuits: Applicable in various switching circuits requiring high efficiency and reliability.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX7002BKXBZ?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the package type of the NX7002BKXBZ?

    The package type is DFN1010B-6 (SOT1216), which is a leadless ultra small and ultra thin SMD plastic package.

  3. What is the maximum gate-source voltage (VGS) of the NX7002BKXBZ?

    The maximum gate-source voltage (VGS) is 20 V.

  4. What is the on-resistance (RDSon) of the NX7002BKXBZ at VGS = 10 V?

    The on-resistance (RDSon) at VGS = 10 V is 2800 mΩ.

  5. Does the NX7002BKXBZ have ESD protection?
  6. What is the maximum junction temperature (Tj) of the NX7002BKXBZ?

    The maximum junction temperature (Tj) is 150 °C.

  7. What is the maximum continuous drain current (ID) of the NX7002BKXBZ?

    The maximum continuous drain current (ID) is 0.33 A.

  8. What are the typical input capacitance (Ciss) and output capacitance (Coss) values of the NX7002BKXBZ?

    The typical input capacitance (Ciss) is 23.6 pF, and the typical output capacitance (Coss) is 4.6 pF.

  9. Is the NX7002BKXBZ RoHS compliant?
  10. What are some common applications of the NX7002BKXBZ?
  11. How can I obtain samples of the NX7002BKXBZ?

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:260mA
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:23.6pF @ 10V
Power - Max:285mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-XFDFN Exposed Pad
Supplier Device Package:DFN1010B-6
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