NX7002BKXBZ
  • Share:

Nexperia USA Inc. NX7002BKXBZ

Manufacturer No:
NX7002BKXBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.26A 6DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX7002BKXBZ is a 60 V, dual N-channel Trench MOSFET produced by Nexperia USA Inc. This component is designed in a leadless ultra small and ultra thin SMD plastic package, specifically the DFN1010B-6 (SOT1216) package, measuring 1.1 x 1.0 x 0.37 mm. It utilizes Trench MOSFET technology, offering high efficiency and reliability in various electronic applications.

Key Specifications

Parameter Value
Type number NX7002BKXB
Package version DFN1010B-6 (SOT1216)
Channel type N (Dual N-channel)
Number of transistors 2
VDS [max] (V) 60
VGS [max] (V) 20
RDSon [max] @ VGS = 10 V (mΩ) 2800
RDSon [max] @ VGS = 5 V (mΩ) 3200
VESD (kV) (HBM) > 2 kV
Tj [max] (°C) 150
ID [max] (A) 0.33
QGD [typ] (nC) 0.18
QG(tot) [typ] @ VGS = 10 V (nC) 1
Ptot [max] (W) 1.6
VGSth [typ] (V) 0.285
Ciss [typ] (pF) 23.6
Coss [typ] (pF) 4.6
Release date 2014-12-15

Key Features

  • Logic-level compatible: Ensures compatibility with a wide range of logic levels.
  • Leadless ultra small and ultra thin SMD plastic package: The DFN1010B-6 (SOT1216) package measures 1.1 x 1.0 x 0.37 mm, making it ideal for space-constrained designs.
  • Trench MOSFET technology: Offers high efficiency, low on-resistance, and fast switching times.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM: Provides robust protection against ESD events.

Applications

  • Relay driver: Suitable for driving relays in various applications.
  • High-speed line driver: Ideal for high-speed line driving due to its fast switching capabilities.
  • Low-side loadswitch: Can be used as a low-side switch in load switching applications.
  • Switching circuits: Applicable in various switching circuits requiring high efficiency and reliability.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX7002BKXBZ?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the package type of the NX7002BKXBZ?

    The package type is DFN1010B-6 (SOT1216), which is a leadless ultra small and ultra thin SMD plastic package.

  3. What is the maximum gate-source voltage (VGS) of the NX7002BKXBZ?

    The maximum gate-source voltage (VGS) is 20 V.

  4. What is the on-resistance (RDSon) of the NX7002BKXBZ at VGS = 10 V?

    The on-resistance (RDSon) at VGS = 10 V is 2800 mΩ.

  5. Does the NX7002BKXBZ have ESD protection?
  6. What is the maximum junction temperature (Tj) of the NX7002BKXBZ?

    The maximum junction temperature (Tj) is 150 °C.

  7. What is the maximum continuous drain current (ID) of the NX7002BKXBZ?

    The maximum continuous drain current (ID) is 0.33 A.

  8. What are the typical input capacitance (Ciss) and output capacitance (Coss) values of the NX7002BKXBZ?

    The typical input capacitance (Ciss) is 23.6 pF, and the typical output capacitance (Coss) is 4.6 pF.

  9. Is the NX7002BKXBZ RoHS compliant?
  10. What are some common applications of the NX7002BKXBZ?
  11. How can I obtain samples of the NX7002BKXBZ?

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:260mA
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:23.6pF @ 10V
Power - Max:285mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-XFDFN Exposed Pad
Supplier Device Package:DFN1010B-6
0 Remaining View Similar

In Stock

$0.49
1,729

Please send RFQ , we will respond immediately.

Related Product By Categories

NTHC5513T1G
NTHC5513T1G
onsemi
MOSFET N/P-CH 20V CHIPFET
2N7002DW
2N7002DW
onsemi
MOSFET 2N-CH 60V 0.115A SC70-6
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
NTJD1155LT1G
NTJD1155LT1G
onsemi
MOSFET N/P-CH 8V 1.3A SOT363
2N7002PV,115
2N7002PV,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.35A SOT-666
NTZD5110NT1G
NTZD5110NT1G
onsemi
MOSFET 2N-CH 60V 294MA SOT563
BUK9K25-40EX
BUK9K25-40EX
Nexperia USA Inc.
MOSFET 2N-CH 40V 18.2A 56LFPAK
STS8DN3LLH5
STS8DN3LLH5
STMicroelectronics
MOSFET 2N-CH 30V 10A 8SO
NX7002BKXBZ
NX7002BKXBZ
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.26A 6DFN
BUK9K17-60EX
BUK9K17-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 26A 56LFPAK
2N7002DWAQ-7
2N7002DWAQ-7
Diodes Incorporated
2N7002 FAMILY SOT363 T&R 3K
2N7002VAC-7
2N7002VAC-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
PRTR5V0U2AX,215
PRTR5V0U2AX,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
PMEG4030ER-QX
PMEG4030ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
PBSS4540Z,115
PBSS4540Z,115
Nexperia USA Inc.
TRANS NPN 40V 5A SOT223
BC817-40QCH-QZ
BC817-40QCH-QZ
Nexperia USA Inc.
TRANS NPN 45V 0.5A DFN1412D-3
PBSS4021PT,215
PBSS4021PT,215
Nexperia USA Inc.
TRANS PNP 20V 3.5A TO236AB
PBSS4160TVL
PBSS4160TVL
Nexperia USA Inc.
TRANS NPN 60V 1A TO236AB
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
74HCT4051PW,112
74HCT4051PW,112
Nexperia USA Inc.
IC MUX/DEMUX 8X1 16TSSOP
HEF4066BT,652
HEF4066BT,652
Nexperia USA Inc.
IC SWITCH QUAD 1X1 14SOIC
74LVC138APW,112
74LVC138APW,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16TSSOP