2N7002DW
  • Share:

onsemi 2N7002DW

Manufacturer No:
2N7002DW
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.115A SC70-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DW is a dual N-Channel Enhancement Mode Field Effect Transistor (MOSFET) produced by onsemi. This device is designed for small signal applications and features advanced trench technology, providing low on-resistance, low gate threshold voltage, and fast switching speeds. The 2N7002DW is packaged in an ultra-small surface mount SOT-363 (SC-70-6, SC-88) package, making it ideal for space-constrained designs. It is also lead-free, halogen-free, and fully RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Symbol Min Typ Max Unit Test Conditions
Drain-Source Voltage VDS 60 V VGS = 0 V, ID = 10 µA
Gate-Source Voltage VGS ±20 V Continuous
Gate Threshold Voltage VGS(th) 1.0 1.76 2.0 V VDS = VGS, ID = 250 µA
Static Drain-Source On-Resistance RDS(on) 7.5 Ω VGS = 5 V, ID = 0.05 A
Maximum Drain Current ID 0.115 A VGS = 10 V
Maximum Junction Temperature TJ 150 °C
Package Style SOT-363 (SC-70-6, SC-88)
Mounting Method Surface Mount

Key Features

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package (SOT-363)
  • Lead Free/RoHS Compliant
  • Halogen and Antimony Free

Applications

  • Consumer Appliances
  • Building & Home Control
  • Motor Control
  • Power Management Functions
  • Battery Operated Systems
  • Solid-State Relays, Drivers for Relays, Displays, Lamps, Solenoids, and Memories

Q & A

  1. What is the maximum drain-source voltage of the 2N7002DW MOSFET?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the gate threshold voltage range of the 2N7002DW?

    The gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.0 V.

  3. What is the maximum drain current of the 2N7002DW?

    The maximum drain current (ID) is 0.115 A at VGS = 10 V.

  4. What is the package style of the 2N7002DW?

    The package style is SOT-363 (SC-70-6, SC-88).

  5. Is the 2N7002DW RoHS compliant?

    Yes, the 2N7002DW is lead-free, halogen-free, and fully RoHS compliant.

  6. What are the typical applications of the 2N7002DW?

    Typical applications include consumer appliances, building and home control, motor control, and power management functions.

  7. What is the maximum junction temperature of the 2N7002DW?

    The maximum junction temperature (TJ) is 150°C.

  8. Does the 2N7002DW have fast switching speeds?

    Yes, the 2N7002DW features fast switching speeds, making it suitable for high-efficiency power management applications.

  9. Is the 2N7002DW suitable for automotive applications?

    For automotive applications requiring specific change control, please refer to the related automotive grade (Q-suffix) part.

  10. What is the input capacitance of the 2N7002DW?

    The input capacitance (Ciss) is typically 37.8 pF to 50 pF at VDS = 25 V, VGS = 0 V, and f = 1.0 MHz.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:115mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:200mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
0 Remaining View Similar

In Stock

$0.51
632

Please send RFQ , we will respond immediately.

Related Product By Categories

IPG20N04S4L08ATMA1
IPG20N04S4L08ATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
FDMC8010A
FDMC8010A
Fairchild Semiconductor
1-ELEMENT, N-CHANNEL
CSD87502Q2T
CSD87502Q2T
Texas Instruments
MOSFET 2N-CH 30V 5A 6WSON
PMGD290UCEAX
PMGD290UCEAX
Nexperia USA Inc.
MOSFET N/P-CH 20V 6TSSOP
FDG6301N
FDG6301N
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
NTMD6N02R2G
NTMD6N02R2G
onsemi
MOSFET 2N-CH 20V 3.92A 8SOIC
BUK7K15-80EX
BUK7K15-80EX
Nexperia USA Inc.
MOSFET 2 N-CH 80V 23A LFPAK56D
STL8DN6LF3
STL8DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
BSS138DWK-7
BSS138DWK-7
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT363 T&R
STL64DN4F7AG
STL64DN4F7AG
STMicroelectronics
MOSFET N-CH 40V 40A POWERFLAT
NDC7002N_SB9G007
NDC7002N_SB9G007
onsemi
MOSFET 2N-CH 50V 0.51A 6-SSOT
VEC2315-TL-W
VEC2315-TL-W
onsemi
MOSFET 2P-CH 60V 2.5A VEC8

Related Product By Brand

BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP