2N7002DW
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onsemi 2N7002DW

Manufacturer No:
2N7002DW
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.115A SC70-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DW is a dual N-Channel Enhancement Mode Field Effect Transistor (MOSFET) produced by onsemi. This device is designed for small signal applications and features advanced trench technology, providing low on-resistance, low gate threshold voltage, and fast switching speeds. The 2N7002DW is packaged in an ultra-small surface mount SOT-363 (SC-70-6, SC-88) package, making it ideal for space-constrained designs. It is also lead-free, halogen-free, and fully RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Symbol Min Typ Max Unit Test Conditions
Drain-Source Voltage VDS 60 V VGS = 0 V, ID = 10 µA
Gate-Source Voltage VGS ±20 V Continuous
Gate Threshold Voltage VGS(th) 1.0 1.76 2.0 V VDS = VGS, ID = 250 µA
Static Drain-Source On-Resistance RDS(on) 7.5 Ω VGS = 5 V, ID = 0.05 A
Maximum Drain Current ID 0.115 A VGS = 10 V
Maximum Junction Temperature TJ 150 °C
Package Style SOT-363 (SC-70-6, SC-88)
Mounting Method Surface Mount

Key Features

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package (SOT-363)
  • Lead Free/RoHS Compliant
  • Halogen and Antimony Free

Applications

  • Consumer Appliances
  • Building & Home Control
  • Motor Control
  • Power Management Functions
  • Battery Operated Systems
  • Solid-State Relays, Drivers for Relays, Displays, Lamps, Solenoids, and Memories

Q & A

  1. What is the maximum drain-source voltage of the 2N7002DW MOSFET?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the gate threshold voltage range of the 2N7002DW?

    The gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.0 V.

  3. What is the maximum drain current of the 2N7002DW?

    The maximum drain current (ID) is 0.115 A at VGS = 10 V.

  4. What is the package style of the 2N7002DW?

    The package style is SOT-363 (SC-70-6, SC-88).

  5. Is the 2N7002DW RoHS compliant?

    Yes, the 2N7002DW is lead-free, halogen-free, and fully RoHS compliant.

  6. What are the typical applications of the 2N7002DW?

    Typical applications include consumer appliances, building and home control, motor control, and power management functions.

  7. What is the maximum junction temperature of the 2N7002DW?

    The maximum junction temperature (TJ) is 150°C.

  8. Does the 2N7002DW have fast switching speeds?

    Yes, the 2N7002DW features fast switching speeds, making it suitable for high-efficiency power management applications.

  9. Is the 2N7002DW suitable for automotive applications?

    For automotive applications requiring specific change control, please refer to the related automotive grade (Q-suffix) part.

  10. What is the input capacitance of the 2N7002DW?

    The input capacitance (Ciss) is typically 37.8 pF to 50 pF at VDS = 25 V, VGS = 0 V, and f = 1.0 MHz.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:115mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:200mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
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