Overview
The FDD8424H-F085A is a dual N and P-Channel enhancement mode PowerTrench MOSFET produced by Fairchild Semiconductor, now part of ON Semiconductor. This device is designed to optimize performance in various power management applications. It features advanced PowerTrench technology, which minimizes on-state resistance and enhances switching performance. Although this device is discontinued and not recommended for new designs, it remains relevant for existing projects and maintenance.
Key Specifications
| Parameter | N-Channel (Q1) | P-Channel (Q2) |
|---|---|---|
| VDS - Drain to Source Voltage | 40 V | -40 V |
| VGS - Gate to Source Voltage | ±20 V | ±20 V |
| ID - Continuous Drain Current (Package Limited) | 20 A | -20 A |
| ID - Continuous Drain Current (Silicon Limited) at TC = 25°C | 26 A | -20 A |
| ID - Pulsed Drain Current | 55 A | -40 A |
| PD - Power Dissipation at TC = 25°C | 30 W | 35 W |
| rDS(on) - On-State Resistance at VGS = 10 V, ID = 9.0 A | 24 mΩ | 54 mΩ |
| rDS(on) - On-State Resistance at VGS = 4.5 V, ID = 7.0 A | 30 mΩ | 70 mΩ |
| Package | TO-252-4L (Dual DPAK) |
Key Features
- Advanced PowerTrench process for low on-state resistance and superior switching performance.
- Dual N and P-Channel configuration for versatile application use.
- Fast switching speed.
- RoHS compliant.
- Low Miller charge and low Qrr body diode for efficient operation.
- UIS (Unclamped Inductive Switching) capability for robust performance in inductive loads.
Applications
- Inverter applications.
- H-Bridge configurations.
- Automotive engine control and powertrain management.
- Solenoid and motor drivers.
- Electronic transmission systems.
- Distributed power architectures.
Q & A
- What is the FDD8424H-F085A MOSFET used for?
The FDD8424H-F085A is used in various power management applications, including inverters, H-Bridge configurations, automotive engine control, and distributed power architectures.
- What are the key specifications of the N-Channel MOSFET in the FDD8424H-F085A?
The N-Channel MOSFET has a VDS of 40 V, ID of 20 A, and rDS(on) of 24 mΩ at VGS = 10 V, ID = 9.0 A.
- What is the package type of the FDD8424H-F085A?
The FDD8424H-F085A comes in a TO-252-4L (Dual DPAK) package.
- Is the FDD8424H-F085A RoHS compliant?
- What is the maximum continuous drain current for the P-Channel MOSFET?
The maximum continuous drain current for the P-Channel MOSFET is -20 A.
- What are the typical on-state resistances for the N and P-Channel MOSFETs at VGS = 4.5 V?
The typical on-state resistance for the N-Channel is 30 mΩ at ID = 7.0 A, and for the P-Channel, it is 70 mΩ at ID = -5.6 A.
- Is the FDD8424H-F085A suitable for new designs?
No, the FDD8424H-F085A is discontinued and not recommended for new designs. Users should contact ON Semiconductor for alternative parts.
- What is the thermal resistance, junction to case, for the N-Channel MOSFET?
The thermal resistance, junction to case, for the N-Channel MOSFET is 4.1 °C/W.
- What are some of the applications where the low Miller charge and low Qrr body diode are beneficial?
These features are beneficial in solenoid and motor drivers, as well as in electronic transmission systems, where efficient and fast switching is critical.
- What is the operating junction temperature range for the FDD8424H-F085A?
The operating junction temperature range is -55 to +150 °C.
