FQA32N20C
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Fairchild Semiconductor FQA32N20C

Manufacturer No:
FQA32N20C
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
POWER FIELD-EFFECT TRANSISTOR, 3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQA32N20C is an N-Channel enhancement mode power MOSFET produced by Fairchild Semiconductor, utilizing their proprietary planar stripe and DMOS technology. This advanced technology enhances the device's performance, making it suitable for a variety of power management applications. The FQA32N20C is known for its high efficiency, low on-resistance, and robust thermal performance, making it a reliable choice in the field of power electronics.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (Vds)200V
Gate-Source Voltage (Vgs)±20V
Continuous Drain Current (Id)32A
Pulse Drain Current (Idm)64A
On-Resistance (Rds(on))0.082 Ω @ Vgs = 10VΩ
Threshold Voltage (Vth)2-4V
Power Dissipation (Pd)82.5W
PackageTO-3P-3, SC-65-3

Key Features

  • High drain current capability of up to 32A.
  • Low on-resistance of 0.082 Ω at Vgs = 10V.
  • High power dissipation of 82.5W.
  • Enhancement mode operation for efficient power management.
  • Robust thermal performance due to advanced DMOS technology.
  • Available in TO-3P-3 and SC-65-3 packages.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Automotive and industrial power systems.
  • Audio amplifiers and other high-power audio equipment.

Q & A

  1. What is the maximum drain-source voltage of the FQA32N20C?
    The maximum drain-source voltage (Vds) is 200V.
  2. What is the continuous drain current of the FQA32N20C?
    The continuous drain current (Id) is 32A.
  3. What is the on-resistance of the FQA32N20C at Vgs = 10V?
    The on-resistance (Rds(on)) at Vgs = 10V is 0.082 Ω.
  4. What are the package options for the FQA32N20C?
    The FQA32N20C is available in TO-3P-3 and SC-65-3 packages.
  5. What is the power dissipation capability of the FQA32N20C?
    The power dissipation (Pd) is 82.5W.
  6. What technology is used in the FQA32N20C?
    The FQA32N20C uses Fairchild Semiconductor's proprietary planar stripe and DMOS technology.
  7. What are typical applications for the FQA32N20C?
    Typical applications include power supplies, DC-DC converters, motor control systems, high-frequency switching applications, and automotive and industrial power systems.
  8. What is the threshold voltage range of the FQA32N20C?
    The threshold voltage (Vth) range is 2-4V.
  9. What is the pulse drain current of the FQA32N20C?
    The pulse drain current (Idm) is 64A.
  10. Is the FQA32N20C suitable for high-power audio equipment?
    Yes, the FQA32N20C is suitable for high-power audio equipment due to its high current and power handling capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:82mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2220 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):204W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
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