Overview
The 2SA2210-EPN-1EX is a PNP epitaxial planar silicon transistor designed for high-current switching applications. It is part of the 2SA2210 series, which is known for its high performance and reliability. This transistor is manufactured by Onsemi, a leading semiconductor company.
The device is housed in the TO-220F-3SG package, making it suitable for a variety of applications that require robust and efficient switching capabilities.
Key Specifications
| Parameter | Symbol | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| Collector-to-Base Voltage | VCBO | - | - | - | -50 | V |
| Collector-to-Emitter Voltage | VCEO | - | - | - | -50 | V |
| Emitter-to-Base Voltage | VEBO | - | - | - | -6 | V |
| Collector Current | IC | - | - | - | -20 | A |
| Collector Current (Pulse) | ICP | - | - | - | -25 | A |
| Base Current | IB | - | - | - | -3 | A |
| Collector Dissipation | PC | Tc = 25°C | - | - | 2 | W |
| Junction Temperature | Tj | - | - | - | 150 | °C |
| Storage Temperature | Tstg | - | -55 to +150 | - | - | °C |
| DC Current Gain | hFE | VCE = -2 V, IC = -1 A | 150 | - | 450 | - |
| Gain-Bandwidth Product | fT | VCE = -10 V, IC = -1 A | - | 140 | - | MHz |
| Output Capacitance | Cob | VCB = -10 V, f = 1 MHz | - | 215 | - | pF |
| Collector-to-Emitter Saturation Voltage | VCE(sat) | IC = -7 A, IB = -350 mA | - | -200 | -500 | mV |
| Base-to-Emitter Saturation Voltage | VBE(sat) | IC = -7 A, IB = -350 mA | - | - | -1.2 | V |
Key Features
- Adoption of MBIT Process: Ensures high reliability and performance.
- Low Collector-to-Emitter Saturation Voltage: Reduces power loss and improves efficiency.
- Large Current Capacitance: Supports high current applications.
- High-Speed Switching: Ideal for applications requiring fast switching times.
- Pb-Free Device: Compliant with environmental regulations.
Applications
- Relay Drivers: Suitable for driving relays in various control systems.
- Lamp Drivers: Can be used to drive lamps in lighting systems.
- Motor Drivers: Ideal for driving motors in industrial and automotive applications.
Q & A
- What is the maximum collector current of the 2SA2210-EPN-1EX?
The maximum collector current is -20 A, with a pulse current of up to -25 A.
- What is the junction temperature rating of this transistor?
The junction temperature rating is 150°C.
- What is the storage temperature range for this device?
The storage temperature range is -55°C to +150°C.
- What is the typical DC current gain (hFE) of the 2SA2210-EPN-1EX?
The typical DC current gain is 150 to 450.
- What is the gain-bandwidth product (fT) of this transistor?
The gain-bandwidth product is 140 MHz.
- What is the collector-to-emitter saturation voltage (VCE(sat))?
The collector-to-emitter saturation voltage is typically -200 mV to -500 mV.
- What are the common applications of the 2SA2210-EPN-1EX?
Common applications include relay drivers, lamp drivers, and motor drivers.
- What package type is the 2SA2210-EPN-1EX available in?
The device is housed in the TO-220F-3SG package.
- Is the 2SA2210-EPN-1EX a Pb-Free device?
Yes, it is a Pb-Free device, making it environmentally compliant.
- What is the turn-on time of the 2SA2210-EPN-1EX?
The turn-on time is typically 60 ns.
