Overview
The FDV302P is a P-Channel digital FET (Field Effect Transistor) produced by Fairchild Semiconductor, now part of ON Semiconductor. This device is designed using Fairchild's proprietary high cell density DMOS (Double-Diffused Metal-Oxide-Semiconductor) technology, which minimizes on-state resistance. The FDV302P is particularly suited for low-voltage applications and can replace several digital transistors with different bias resistors, such as the DTCx and DCDx series. It features a compact industry-standard SOT-23 surface mount package and is known for its low level gate drive requirements, making it compatible with 3V circuits.
Key Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain-Source Voltage | VDSS | -25 | V |
| Gate-Source Voltage | VGSS | ±8 | V |
| Continuous Drain Current | ID | -0.12 | A |
| Pulsed Drain Current | ID | -0.5 | A |
| Maximum Power Dissipation | PD | 0.35 | W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C |
| Electrostatic Discharge Rating (Human Body Model) | ESD | 6.0 kV | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 357 | °C/W |
| On-State Drain-Source Resistance | RDS(ON) | 10 Ω @ VGS = -4.5 V, 13 Ω @ VGS = -2.7 V | Ω |
| Gate-Source Threshold Voltage | VGS(th) | < 1.5 V | V |
| Total Gate Charge | Qg | 0.31 nC @ VGS = -4.5 V | nC |
| Input Capacitance | Ciss | 11 pF @ VDS = -10 V | pF |
Key Features
- Very low level gate drive requirements, allowing direct operation in 3V circuits.
- Gate-Source Zener for ESD ruggedness, with a Human Body Model ESD rating of 6.0 kV.
- Compact industry-standard SOT-23 surface mount package.
- Can replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET.
- High cell density DMOS technology to minimize on-state resistance.
- No bias resistors required.
- Operating temperature range from -55°C to 150°C.
Applications
The FDV302P is suitable for a variety of low-voltage applications, including:
- Replacement for digital transistors in logic circuits.
- Low-voltage switching and control circuits.
- Portable electronic devices requiring low power consumption.
- Automotive and industrial control systems.
- General-purpose switching applications where low on-state resistance is critical.
Q & A
- What is the maximum drain-source voltage of the FDV302P?
The maximum drain-source voltage (VDSS) is -25 V.
- What is the continuous drain current rating of the FDV302P?
The continuous drain current (ID) is -0.12 A.
- What is the maximum power dissipation of the FDV302P?
The maximum power dissipation (PD) is 0.35 W.
- What is the operating temperature range of the FDV302P?
The operating temperature range is from -55°C to 150°C.
- What is the ESD rating of the FDV302P?
The ESD rating is 6.0 kV according to the Human Body Model.
- What is the typical on-state resistance of the FDV302P?
The on-state resistance (RDS(ON)) is typically 10 Ω at VGS = -4.5 V and 13 Ω at VGS = -2.7 V.
- What package types are available for the FDV302P?
The FDV302P is available in TO-236-3, SC-59, and SOT-23-3 packages.
- Can the FDV302P replace other types of transistors?
Yes, it can replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET.
- What is the gate-source threshold voltage of the FDV302P?
The gate-source threshold voltage (VGS(th)) is less than 1.5 V.
- What are some common applications for the FDV302P?
Common applications include low-voltage switching and control circuits, portable electronic devices, automotive and industrial control systems, and general-purpose switching applications.
