Overview
The MJD44H11TM is an NPN epitaxial silicon transistor produced by Fairchild Semiconductor. This transistor is designed for general-purpose power and switching applications, such as output or driver stages in various electronic systems. It is packaged in a D-PAK (TO-252 3L) surface-mount configuration, making it suitable for a wide range of applications including switching regulators, converters, and power amplifiers.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 80 | V |
| Emitter-Base Voltage (VEB0) | 5 | V |
| Continuous Collector Current (IC) | 8 | A |
| Pulse Collector Current (ICP) | 16 | A |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature Range (TSTG) | -65 to +150 | °C |
| Total Device Dissipation (PD) at TC = 25°C | 20 | W |
| Thermal Resistance, Junction-to-Case (RθJC) | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 71.4 | °C/W |
| DC Current Gain (hFE) at VCE = 1 V, IC = 2 A | 60 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 8 A, IB = 0.4 A | 1 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) at IC = 8 A, IB = 0.8 A | 1.5 | V |
| Current Gain Bandwidth Product (fT) at VCE = 10 V, IC = 0.5 A | 50 | MHz |
| Output Capacitance (Cob) at VCB = 10 V, f = 1 MHz | 130 | pF |
| Turn-On Time (tON) at IC = 5 A, IB1 = -IB2 = 0.5 A | 300 | ns |
| Storage Time (tSTG) at IC = 5 A, IB1 = IB2 = 0.5 A | 500 | ns |
| Fall Time (tF) at IC = 5 A, IB1 = IB2 = 0.5 A | 140 | ns |
Key Features
- General-purpose power and switching transistor suitable for output or driver stages in various applications.
- D-PAK (TO-252 3L) surface-mount package for easy integration into surface-mount designs.
- Lead-formed for surface mount application (no suffix) and straight lead version available.
- Fast switching speeds, making it ideal for high-frequency applications.
- Low collector-emitter saturation voltage (VCE(sat)) of 1 V at IC = 8 A, IB = 0.4 A.
- High DC current gain (hFE) with a minimum value of 40 at VCE = 1 V, IC = 4 A.
- Complementary pairs simplify designs, especially in applications requiring matched NPN and PNP transistors.
- Epoxy meets UL 94 V-0 @ 0.125 in, ensuring high reliability and safety.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Applications
- Switching regulators and converters.
- Power amplifiers and driver stages.
- Automotive applications requiring high reliability and specific control change requirements.
- General-purpose power and switching in various electronic systems.
- High-frequency applications due to its fast switching speeds and high current gain bandwidth product.
Q & A
- What is the maximum collector-emitter voltage of the MJD44H11TM transistor?
The maximum collector-emitter voltage (VCEO) is 80 V.
- What is the continuous collector current rating of the MJD44H11TM transistor?
The continuous collector current (IC) is 8 A.
- What is the typical DC current gain (hFE) of the MJD44H11TM transistor?
The typical DC current gain (hFE) is 60 at VCE = 1 V, IC = 2 A.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MJD44H11TM transistor?
The collector-emitter saturation voltage (VCE(sat)) is 1 V at IC = 8 A, IB = 0.4 A.
- What is the thermal resistance, junction-to-case (RθJC) of the MJD44H11TM transistor?
The thermal resistance, junction-to-case (RθJC) is 6.25 °C/W.
- What is the typical current gain bandwidth product (fT) of the MJD44H11TM transistor?
The typical current gain bandwidth product (fT) is 50 MHz at VCE = 10 V, IC = 0.5 A.
- What is the turn-on time (tON) of the MJD44H11TM transistor?
The turn-on time (tON) is 300 ns at IC = 5 A, IB1 = -IB2 = 0.5 A.
- What is the storage time (tSTG) of the MJD44H11TM transistor?
The storage time (tSTG) is 500 ns at IC = 5 A, IB1 = IB2 = 0.5 A.
- What is the fall time (tF) of the MJD44H11TM transistor?
The fall time (tF) is 140 ns at IC = 5 A, IB1 = IB2 = 0.5 A.
- Is the MJD44H11TM transistor RoHS compliant?
Yes, the MJD44H11TM transistor is RoHS compliant.
- What is the package type of the MJD44H11TM transistor?
The package type is D-PAK (TO-252 3L) surface-mount.
