Overview
The FDMC8010 is an N-Channel MOSFET produced by ON Semiconductor, utilizing their advanced PowerTrench® process. This technology is specifically designed to minimize on-state resistance, making the device ideal for applications requiring ultra-low RDS(on) in compact spaces. The FDMC8010 is part of the PowerTrench® family, known for its high performance and efficiency.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | 30 | V | ||
| Gate to Source Voltage | VGS | 20 | V | ||
| Drain Current (Continuous, Package limited) | ID | 75 | A | ||
| Drain Current (Continuous, Silicon limited) | ID | 166 | A | ||
| Power Dissipation (T = 25°C) | PD | 54 | W | ||
| Static Drain to Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 0.9 | 1.3 | mΩ | |
| Static Drain to Source On Resistance (VGS = 4.5 V, ID = 25 A) | RDS(on) | 1.3 | 1.8 | mΩ | |
| Thermal Resistance, Junction to Case | RθJC | 1.3 | °C/W | ||
| Thermal Resistance, Junction to Ambient | RθJA | 53 | °C/W |
Key Features
- Advanced PowerTrench® process for ultra-low on-state resistance (RDS(on))
- High performance technology for extremely low RDS(on)
- Lead-free and RoHS compliant
- High efficiency and thermally efficient packages
- Next-generation enhanced body diode technology for soft recovery
- Compact PQFN-8 package (3.3x3.3 mm)
Applications
- High performance VRM (Voltage Regulator Modules)
- POL (Point of Load) applications
- Oring functions
- DC-DC buck converters
- Load switches and low side switching
- AC-DC merchant power supplies
Q & A
- What is the maximum drain to source voltage of the FDMC8010 MOSFET?
The maximum drain to source voltage (VDS) is 30 V.
- What is the typical on-state resistance of the FDMC8010 at VGS = 10 V and ID = 30 A?
The typical on-state resistance (RDS(on)) is 1.3 mΩ at VGS = 10 V and ID = 30 A.
- Is the FDMC8010 MOSFET RoHS compliant?
Yes, the FDMC8010 MOSFET is lead-free and RoHS compliant.
- What are the typical applications of the FDMC8010 MOSFET?
The FDMC8010 is typically used in high performance VRM, POL, Oring functions, DC-DC buck converters, load switches, and low side switching.
- What is the thermal resistance, junction to case, of the FDMC8010?
The thermal resistance, junction to case (RθJC), is 1.3 °C/W.
- What is the maximum continuous drain current of the FDMC8010?
The maximum continuous drain current (ID) is 75 A.
- What package type is used for the FDMC8010 MOSFET?
The FDMC8010 MOSFET is packaged in a PQFN-8 (3.3x3.3 mm) package.
- What is the gate to source threshold voltage of the FDMC8010?
The gate to source threshold voltage (VGS(th)) is between 1.2 V and 2.5 V.
- What is the maximum power dissipation of the FDMC8010 at T = 25°C?
The maximum power dissipation (PD) is 54 W at T = 25°C.
- Is the FDMC8010 suitable for high-efficiency applications?
Yes, the FDMC8010 is designed for high-efficiency applications due to its advanced PowerTrench® process and low on-state resistance.
