FDMC8010A
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Fairchild Semiconductor FDMC8010A

Manufacturer No:
FDMC8010A
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
1-ELEMENT, N-CHANNEL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC8010 is an N-Channel MOSFET produced by ON Semiconductor, utilizing their advanced PowerTrench® process. This technology is specifically designed to minimize on-state resistance, making the device ideal for applications requiring ultra-low RDS(on) in compact spaces. The FDMC8010 is part of the PowerTrench® family, known for its high performance and efficiency.

Key Specifications

Parameter Symbol Min Typ Max Unit
Drain to Source Voltage VDS 30 V
Gate to Source Voltage VGS 20 V
Drain Current (Continuous, Package limited) ID 75 A
Drain Current (Continuous, Silicon limited) ID 166 A
Power Dissipation (T = 25°C) PD 54 W
Static Drain to Source On Resistance (VGS = 10 V, ID = 30 A) RDS(on) 0.9 1.3
Static Drain to Source On Resistance (VGS = 4.5 V, ID = 25 A) RDS(on) 1.3 1.8
Thermal Resistance, Junction to Case RθJC 1.3 °C/W
Thermal Resistance, Junction to Ambient RθJA 53 °C/W

Key Features

  • Advanced PowerTrench® process for ultra-low on-state resistance (RDS(on))
  • High performance technology for extremely low RDS(on)
  • Lead-free and RoHS compliant
  • High efficiency and thermally efficient packages
  • Next-generation enhanced body diode technology for soft recovery
  • Compact PQFN-8 package (3.3x3.3 mm)

Applications

  • High performance VRM (Voltage Regulator Modules)
  • POL (Point of Load) applications
  • Oring functions
  • DC-DC buck converters
  • Load switches and low side switching
  • AC-DC merchant power supplies

Q & A

  1. What is the maximum drain to source voltage of the FDMC8010 MOSFET?

    The maximum drain to source voltage (VDS) is 30 V.

  2. What is the typical on-state resistance of the FDMC8010 at VGS = 10 V and ID = 30 A?

    The typical on-state resistance (RDS(on)) is 1.3 mΩ at VGS = 10 V and ID = 30 A.

  3. Is the FDMC8010 MOSFET RoHS compliant?

    Yes, the FDMC8010 MOSFET is lead-free and RoHS compliant.

  4. What are the typical applications of the FDMC8010 MOSFET?

    The FDMC8010 is typically used in high performance VRM, POL, Oring functions, DC-DC buck converters, load switches, and low side switching.

  5. What is the thermal resistance, junction to case, of the FDMC8010?

    The thermal resistance, junction to case (RθJC), is 1.3 °C/W.

  6. What is the maximum continuous drain current of the FDMC8010?

    The maximum continuous drain current (ID) is 75 A.

  7. What package type is used for the FDMC8010 MOSFET?

    The FDMC8010 MOSFET is packaged in a PQFN-8 (3.3x3.3 mm) package.

  8. What is the gate to source threshold voltage of the FDMC8010?

    The gate to source threshold voltage (VGS(th)) is between 1.2 V and 2.5 V.

  9. What is the maximum power dissipation of the FDMC8010 at T = 25°C?

    The maximum power dissipation (PD) is 54 W at T = 25°C.

  10. Is the FDMC8010 suitable for high-efficiency applications?

    Yes, the FDMC8010 is designed for high-efficiency applications due to its advanced PowerTrench® process and low on-state resistance.

Product Attributes

FET Type:- 
FET Feature:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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