NDS355AN-NB9L007A
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Fairchild Semiconductor NDS355AN-NB9L007A

Manufacturer No:
NDS355AN-NB9L007A
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
NDS355AN - N-CHANNEL LOGIC LEVEL
Delivery:
Payment:
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Product Introduction

Overview

The NDS355AN-NB9L007A is a high-performance N-Channel logic level enhancement mode power field effect transistor (MOSFET) produced by Fairchild Semiconductor, now part of onsemi. This device is designed for a wide range of applications requiring low on-resistance and high current handling capabilities. It features a compact industry-standard SOT-23-3 surface mount package, making it ideal for space-constrained designs. The NDS355AN-NB9L007A is Pb-free, ensuring compliance with environmental regulations.

Key Specifications

Product Attribute Attribute Value
Manufacturer Fairchild Semiconductor (onsemi)
Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23-3
Rds On (Max) @ Id, Vgs 85mOhm @ 1.9A, 10V
Power Dissipation (Max) 500mW (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 5 V
FET Type N-Channel
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Drain to Source Voltage (Vdss) 30 V

Key Features

  • Low On-Resistance: The NDS355AN-NB9L007A features a low on-resistance of 85mOhm at 1.9A and 10V, making it suitable for high-efficiency applications.
  • High Current Capability: It can handle a continuous drain current of 1.7A at 25°C, ensuring robust performance in demanding environments.
  • Compact Package: The SOT-23-3 surface mount package is compact and industry-standard, ideal for space-constrained designs.
  • Wide Operating Temperature Range: The device operates over a temperature range of -55°C to 150°C, making it versatile for various applications.
  • Pb-Free Compliance: The NDS355AN-NB9L007A is Pb-free, ensuring compliance with environmental regulations.

Applications

  • Power Management: Suitable for power management in various electronic devices, including DC-DC converters and power supplies.
  • Motor Control: Can be used in motor control circuits due to its high current handling and low on-resistance.
  • Switching Circuits: Ideal for switching applications requiring fast switching times and low power loss.
  • Automotive Systems: Applicable in automotive systems where high reliability and performance are critical.
  • Consumer Electronics: Used in consumer electronics such as smartphones, tablets, and laptops for efficient power management.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the NDS355AN-NB9L007A?

    The maximum drain to source voltage (Vdss) is 30 V.

  2. What is the continuous drain current (Id) at 25°C for this MOSFET?

    The continuous drain current (Id) at 25°C is 1.7A.

  3. What is the maximum power dissipation of the NDS355AN-NB9L007A?

    The maximum power dissipation is 500mW (Ta).

  4. What is the gate threshold voltage (Vgs(th)) of this MOSFET?

    The gate threshold voltage (Vgs(th)) is 2V at 250µA.

  5. What is the package type of the NDS355AN-NB9L007A?

    The package type is SOT-23-3.

  6. Is the NDS355AN-NB9L007A Pb-free?

    Yes, the NDS355AN-NB9L007A is Pb-free.

  7. What is the operating temperature range of this MOSFET?

    The operating temperature range is -55°C to 150°C (TJ).

  8. What is the input capacitance (Ciss) of the NDS355AN-NB9L007A?

    The input capacitance (Ciss) is 195 pF at 15 V.

  9. What is the gate charge (Qg) of this MOSFET?

    The gate charge (Qg) is 5 nC at 5 V.

  10. What are some common applications of the NDS355AN-NB9L007A?

    Common applications include power management, motor control, switching circuits, automotive systems, and consumer electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:85mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:195 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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