BDX53BTU
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Fairchild Semiconductor BDX53BTU

Manufacturer No:
BDX53BTU
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Description:
TRANS NPN DARL 80V 8A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BDX53BTU is an NPN Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is part of the BDX53 series, which includes the BDX53, BDX53A, BDX53B, and BDX53C models. The BDX53BTU is a power Darlington transistor designed for high-current applications.

Key Specifications

Parameter Value Units
Collector-Base Voltage (VCBO) 80 V
Collector-Emitter Voltage (VCEO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (DC) (IC) 8 A
Collector Current (Pulse) (ICP) 12 A
Base Current (IB) 0.2 A
Collector Dissipation (PC) 60 W
Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -65 to 150 °C

Key Features

  • Power Darlington Transistor: Designed for high-current applications, providing high current gain and low saturation voltage.
  • Complementary Transistors: The BDX53 series has complementary transistors BDX54, BDX54A, BDX54B, and BDX54C.
  • High Collector Current: Supports up to 8A of continuous collector current and 12A of pulsed collector current.
  • High Collector Dissipation: Capable of dissipating up to 60W of power.

Applications

  • Hammer Drivers: Suitable for applications requiring high current pulses.
  • Audio Amplifiers: Used in audio amplifier circuits due to its high current handling capability.
  • Power Liner and Switching Applications: Ideal for power switching and linear applications where high current and voltage are required.

Q & A

  1. What is the BDX53BTU transistor?

    The BDX53BTU is an NPN Epitaxial Silicon Transistor, part of the BDX53 series, designed for high-current applications.

  2. Who is the manufacturer of the BDX53BTU transistor?

    The BDX53BTU is manufactured by Fairchild Semiconductor, now part of ON Semiconductor.

  3. What is the maximum collector current for the BDX53BTU?

    The maximum continuous collector current is 8A, and the maximum pulsed collector current is 12A.

  4. What are the typical applications of the BDX53BTU transistor?

    It is used in hammer drivers, audio amplifiers, power liner, and switching applications.

  5. What is the collector-emitter voltage rating for the BDX53BTU?

    The collector-emitter voltage rating is 80V.

  6. What is the junction temperature range for the BDX53BTU?

    The junction temperature range is up to 150°C.

  7. Is the BDX53BTU still in production?

    No, the BDX53BTU has been discontinued by Fairchild Semiconductor.

  8. What is the storage temperature range for the BDX53BTU?

    The storage temperature range is -65°C to 150°C.

  9. What is the collector dissipation rating for the BDX53BTU?

    The collector dissipation rating is 60W.

  10. What package type does the BDX53BTU come in?

    The BDX53BTU comes in a TO-220 package.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:2V @ 12mA, 3A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
Power - Max:60 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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Same Series
BDX53ATU
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BDX53TU
BDX53TU
TRANS NPN DARL 45V 8A TO220-3

Similar Products

Part Number BDX53BTU BDX53CTU BDX54BTU BDX53TU BDX53ATU
Manufacturer Fairchild Semiconductor onsemi onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 8 A 8 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 100 V 80 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A 2V @ 12mA, 3A 2V @ 12mA, 3A 2V @ 12mA, 3A 2V @ 12mA, 3A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V
Power - Max 60 W 60 W 60 W 60 W 60 W
Frequency - Transition - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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