BDX53CTU
  • Share:

onsemi BDX53CTU

Manufacturer No:
BDX53CTU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN DARL 100V 8A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BDX53CTU is an 8 A, 100 V, 65 W NPN Darlington Bipolar Power Transistor manufactured by onsemi. This transistor is designed for general purpose and low speed switching applications. It is part of a family of complementary devices that include the BDX53B, BDX53C, BDX54B, and BDX54C. The BDX53CTU features a monolithic Darlington configuration with built-in base-emitter shunt resistors, making it suitable for a variety of power management and control applications.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 100 V
Maximum DC Collector Current (IC) 8 A
Maximum Collector Cut-off Current (ICBO) 0.2 mA
Power Dissipation (PTOT) 60 W
Collector-Emitter Sustaining Voltage (VCEO(sus)) 100 V
Collector-Emitter Saturation Voltage (VCE(sat)) 2.0 V @ IC = 3 A, IB = 12 mA
DC Current Gain (hFE) 750 (Min) @ IC = 3 A, VCE = 3 V
Storage Temperature (Tstg) -65 to 150 °C
Maximum Operating Junction Temperature (TJ) 150 °C

Key Features

  • Monolithic Darlington configuration with built-in base-emitter shunt resistors
  • High DC current gain (hFE = 750 Min @ IC = 3 A, VCE = 3 V)
  • Low collector-emitter saturation voltage (VCE(sat) = 2.0 V @ IC = 3 A, IB = 12 mA)
  • Good hFE linearity and high fT frequency
  • TO-220AB compact package
  • Pb-free packages available

Applications

  • Audio amplifiers
  • Linear and switching industrial equipment
  • General purpose and low speed switching applications

Q & A

  1. What is the maximum DC collector current of the BDX53CTU?

    The maximum DC collector current is 8 A.

  2. What is the collector-base voltage (VCBO) of the BDX53CTU?

    The collector-base voltage (VCBO) is 100 V.

  3. What is the power dissipation (PTOT) of the BDX53CTU?

    The power dissipation (PTOT) is 60 W.

  4. What is the typical DC current gain (hFE) of the BDX53CTU?

    The typical DC current gain (hFE) is 750 @ IC = 3 A, VCE = 3 V.

  5. What is the collector-emitter saturation voltage (VCE(sat)) of the BDX53CTU?

    The collector-emitter saturation voltage (VCE(sat)) is 2.0 V @ IC = 3 A, IB = 12 mA.

  6. What package type does the BDX53CTU come in?

    The BDX53CTU comes in a TO-220AB compact package.

  7. Is the BDX53CTU available in Pb-free packages?
  8. What are some common applications of the BDX53CTU?
  9. What is the maximum operating junction temperature of the BDX53CTU?
  10. What is the storage temperature range for the BDX53CTU?

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2V @ 12mA, 3A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
Power - Max:60 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

$0.84
89

Please send RFQ , we will respond immediately.

Similar Products

Part Number BDX53CTU BDX54CTU BDX53TU BDX33CTU BDX53ATU BDX53BTU
Manufacturer onsemi onsemi onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 8 A 8 A 8 A 10 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 45 V 100 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A 2V @ 12mA, 3A 2V @ 12mA, 3A 2.5V @ 6mA, 3A 2V @ 12mA, 3A 2V @ 12mA, 3A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V
Power - Max 60 W 60 W 60 W 70 W 60 W 60 W
Frequency - Transition - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
NSV1C201MZ4T1G
NSV1C201MZ4T1G
onsemi
TRANS NPN 100V 2A SOT223
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
MJE340STU
MJE340STU
onsemi
TRANS NPN 300V 0.5A TO126-3
PN2222AG
PN2222AG
onsemi
TRANS NPN 40V 0.6A TO92
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC858B-QR
BC858B-QR
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP