Overview
The BDX33CTU is a Darlington complementary silicon power transistor produced by onsemi. It is part of the BDX33 series, which includes the BDX33B and BDX33C models. These transistors are designed for general-purpose and low-speed switching applications. They are known for their high DC current gain and robust electrical characteristics, making them suitable for a variety of power linear and switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 | Vdc |
| Collector-Base Voltage | VCB | 100 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current (Continuous) | IC | 10 | A |
| Collector Current (Peak) | ICM | 15 | A |
| Base Current | IB | 0.25 | A |
| Total Device Dissipation at Tc ≤ 25°C | Ptot | 70 | W |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Maximum Operating Junction Temperature | Tj | 150 | °C |
| Thermal Resistance, Junction-to-Case | Rthj-case | 1.78 | °C/W |
| DC Current Gain (hFE) at IC = 3.0 A, VCE = 3.0 V | hFE | 750 | |
| Collector-Emitter Saturation Voltage at IC = 3.0 A, IB = 6.0 mA | VCE(sat) | 2.5 | Vdc |
Key Features
- High DC Current Gain: hFE = 750 (typ.) at IC = 3.0 A, VCE = 3.0 Vdc.
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors.
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.5 Vdc (max) at IC = 3.0 A, IB = 6.0 mA.
- Pb-Free and RoHS Compliant.
- High Collector-Emitter Sustaining Voltage: VCEO(sus) = 100 Vdc (min) for BDX33C.
Applications
The BDX33CTU and its complementary types are intended for use in power linear and switching applications. These include:
- Power amplifiers and drivers.
- Switching regulators and power supplies.
- Motor control and automation systems.
- General-purpose power switching and linear applications.
Q & A
- What is the maximum collector-emitter voltage for the BDX33CTU?
The maximum collector-emitter voltage (VCEO) for the BDX33CTU is 100 Vdc. - What is the typical DC current gain (hFE) of the BDX33CTU?
The typical DC current gain (hFE) is 750 at IC = 3.0 A, VCE = 3.0 Vdc. - What is the maximum collector current for the BDX33CTU?
The maximum continuous collector current (IC) is 10 A, and the peak collector current (ICM) is 15 A. - Is the BDX33CTU Pb-Free and RoHS compliant?
Yes, the BDX33CTU is Pb-Free and RoHS compliant. - What is the thermal resistance, junction-to-case, for the BDX33CTU?
The thermal resistance, junction-to-case (Rthj-case), is 1.78 °C/W. - What are the storage and operating temperature ranges for the BDX33CTU?
The storage temperature range is -65 to +150 °C, and the maximum operating junction temperature is 150 °C. - What is the collector-emitter saturation voltage for the BDX33CTU?
The collector-emitter saturation voltage (VCE(sat)) is 2.5 Vdc (max) at IC = 3.0 A, IB = 6.0 mA. - What type of package does the BDX33CTU come in?
The BDX33CTU comes in a TO-220 plastic package. - What are some typical applications for the BDX33CTU?
Typical applications include power amplifiers, switching regulators, motor control systems, and general-purpose power switching and linear applications. - What is the base-emitter voltage for the BDX33CTU?
The base-emitter voltage (VBE) is 2.5 V at IC = 3.0 A, VCE = 3.0 Vdc.
