BD140G
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onsemi BD140G

Manufacturer No:
BD140G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 80V 1.5A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD140G is a plastic medium-power silicon PNP transistor manufactured by onsemi. This transistor is designed for use in various applications, including audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits. It is part of a series that includes the BD136G and BD138G, which are complementary to the BD135, BD137, and BD139 transistors. The BD140G is known for its high DC current gain and robust performance, making it suitable for medium-power linear and switching applications.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO80Vdc
Collector-Base VoltageVCBO100Vdc
Emitter-Base VoltageVEBO5.0Vdc
Collector CurrentIC1.5Adc
Base CurrentIB0.5Adc
Total Device Dissipation at TA = 25°CPD12.5Watts
Operating and Storage Junction Temperature RangeTJ, Tstg–55 to +150°C
Transition Frequencyft50MHz
DC Current Gain (hFE) at IC = 0.15 AhFE40 (Min)
Collector-Emitter Saturation Voltage at IC = 0.5 A, IB = 0.05 AVCE(sat)0.5Vdc
Base-Emitter On Voltage at IC = 0.5 A, VCE = 2.0 VdcVBE(on)1Vdc

Key Features

  • High DC current gain (hFE = 40 Min at IC = 0.15 A)
  • Complementary to BD135, BD137, and BD139 transistors
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant
  • High current capability (up to 1.5 A)
  • Low voltage operation (up to 80 V)
  • Suitable for medium-power linear and switching applications

Applications

The BD140G transistor is designed for use in various applications, including:

  • Audio amplifiers and drivers
  • Complementary or quasi-complementary circuits
  • Driver stages in high-fidelity amplifiers
  • Television circuits
  • Medium-power linear and switching applications

Q & A

  1. What is the maximum collector-emitter voltage of the BD140G transistor?
    The maximum collector-emitter voltage (VCEO) of the BD140G transistor is 80 Vdc.
  2. What is the maximum collector current of the BD140G transistor?
    The maximum collector current (IC) of the BD140G transistor is 1.5 Adc.
  3. What is the DC current gain (hFE) of the BD140G transistor?
    The DC current gain (hFE) of the BD140G transistor is 40 (Min) at IC = 0.15 A.
  4. Is the BD140G transistor Pb-Free and RoHS compliant?
    Yes, the BD140G transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  5. What are the typical applications of the BD140G transistor?
    The BD140G transistor is typically used in audio amplifiers, drivers, high-fidelity amplifiers, and television circuits.
  6. What is the transition frequency (ft) of the BD140G transistor?
    The transition frequency (ft) of the BD140G transistor is 50 MHz.
  7. What is the maximum operating junction temperature of the BD140G transistor?
    The maximum operating junction temperature (TJ) of the BD140G transistor is 150°C.
  8. What package type is the BD140G transistor available in?
    The BD140G transistor is available in a TO-126 plastic package.
  9. What are the complementary transistors to the BD140G?
    The BD140G transistor is complementary to the BD135, BD137, and BD139 transistors.
  10. What is the collector-emitter saturation voltage of the BD140G transistor?
    The collector-emitter saturation voltage (VCE(sat)) of the BD140G transistor is 0.5 Vdc at IC = 0.5 A, IB = 0.05 A.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
BD140
BD140
TRANS PNP 80V 1.5A SOT32-3
BD138G
BD138G
TRANS PNP 60V 1.5A TO126
BD140G
BD140G
TRANS PNP 80V 1.5A TO126
BD136G
BD136G
TRANS PNP 45V 1.5A TO126

Similar Products

Part Number BD140G BD180G BD140
Manufacturer onsemi onsemi STMicroelectronics
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 1.5 A 1 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 800mV @ 100mA, 1A 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 1mA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 1.25 W 30 W 1.25 W
Frequency - Transition - 3MHz -
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 SOT-32-3

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