BD136G
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onsemi BD136G

Manufacturer No:
BD136G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 45V 1.5A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD136G is a plastic, medium-power silicon PNP transistor produced by onsemi. This transistor is designed for use in audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits. It is part of a series that includes the BD138G and BD140G, each offering different voltage ratings. The BD136G is known for its high DC current gain and is RoHS compliant, making it suitable for a wide range of applications where environmental regulations are stringent.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 45 Vdc
Collector-Base Voltage VCBO 45 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 1.5 Adc
Base Current IB 0.5 Adc
Total Device Dissipation @ TA = 25°C PD 1.25 Watts
Thermal Resistance, Junction-to-Case RθJC 10 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 100 °C/W
Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C
DC Current Gain (IC = 0.5 A, VCE = 2 V) hFE 25 - 250
Collector-Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.05 Adc) VCE(sat) 0.5 Vdc
Base-Emitter On Voltage (IC = 0.5 Adc, VCE = 2.0 Vdc) VBE(on) 1 Vdc

Key Features

  • High DC Current Gain: The BD136G offers a high DC current gain, making it suitable for applications requiring high amplification.
  • Complementary Devices: The BD136G is complementary to the BD135G, BD137G, and BD139G, allowing for versatile circuit design.
  • Environmental Compliance: The transistor is Pb-free, halogen-free, and RoHS compliant, ensuring it meets stringent environmental regulations.
  • Medium-Power Capability: With a total device dissipation of up to 1.25 Watts at 25°C, it is suitable for medium-power applications.
  • Wide Operating Temperature Range: The device can operate over a junction temperature range of –55 to +150°C.

Applications

  • Audio Amplifiers: The BD136G is particularly suited for use in audio amplifiers due to its high DC current gain and medium-power handling.
  • Drivers: It can be used as a driver in various electronic circuits requiring high current amplification.
  • Complementary Circuits: The transistor is ideal for use in complementary or quasi-complementary circuits, enhancing the performance of such designs.
  • General-Purpose Amplification: Its versatility makes it a good choice for general-purpose amplification tasks in electronic systems.

Q & A

  1. What is the maximum collector-emitter voltage for the BD136G?

    The maximum collector-emitter voltage (VCEO) for the BD136G is 45 Vdc.

  2. What is the maximum collector current for the BD136G?

    The maximum collector current (IC) for the BD136G is 1.5 Adc.

  3. What is the thermal resistance from junction to case for the BD136G?

    The thermal resistance from junction to case (RθJC) for the BD136G is 10 °C/W.

  4. Is the BD136G RoHS compliant?
  5. What is the operating junction temperature range for the BD136G?

    The operating and storage junction temperature range for the BD136G is –55 to +150 °C.

  6. What is the typical DC current gain for the BD136G?

    The typical DC current gain (hFE) for the BD136G ranges from 25 to 250.

  7. What is the collector-emitter saturation voltage for the BD136G?

    The collector-emitter saturation voltage (VCE(sat)) for the BD136G is 0.5 Vdc.

  8. What is the base-emitter on voltage for the BD136G?

    The base-emitter on voltage (VBE(on)) for the BD136G is 1 Vdc.

  9. In what type of circuits is the BD136G commonly used?

    The BD136G is commonly used in complementary or quasi-complementary circuits, particularly in audio amplifiers and drivers.

  10. What is the package type for the BD136G?

    The BD136G comes in a TO-225 package and is Pb-free.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
BD140
BD140
TRANS PNP 80V 1.5A SOT32-3
BD138G
BD138G
TRANS PNP 60V 1.5A TO126
BD140G
BD140G
TRANS PNP 80V 1.5A TO126
BD136G
BD136G
TRANS PNP 45V 1.5A TO126

Similar Products

Part Number BD136G BD139G BD138G BD137G BD135G BD136
Manufacturer onsemi onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Active Active Active Active
Transistor Type PNP NPN PNP NPN NPN PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 45 V 80 V 60 V 60 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 2V, 150MA
Power - Max 1.25 W 12.5 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126 SOT-32-3

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