BD139G
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onsemi BD139G

Manufacturer No:
BD139G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 1.5A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD139G is a general-purpose NPN silicon power transistor manufactured by ON Semiconductor. It is designed for use in audio output stages and other power switching circuits where medium power output and low-noise operation are desired. This transistor is part of a series that includes the BD135 and BD137, and it is complementary to the PNP types BD136, BD138, and BD140.

The BD139G features an integrated collector-emitter breakdown voltage of 80 volts and is capable of handling up to 1.5 amps of continuous collector current. It operates within a temperature range of -55°C to +150°C, making it suitable for a variety of applications.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 V
Collector-Base Voltage VCBO 80 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC 1.5 A
Base Current IB 0.5 A
Power Dissipation PD 12.5 W
Operating Junction Temperature TJ -55 to +150 °C
Transition Frequency ft 50 MHz
DC Current Gain (hFE) hFE 40 (Min) @ IC = 0.15 A
Package Type TO-225

Key Features

  • High current capability up to 1.5 A
  • Low voltage operation with a maximum collector-emitter voltage of 80 V
  • DC current gain (hFE) of 40 (Min) at IC = 0.15 A
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
  • Complementary to BD136, BD138, and BD140
  • Operating temperature range of -55°C to +150°C
  • Medium power dissipation of 12.5 W

Applications

The BD139G is designed for use in various applications, including:

  • Audio amplifiers and drivers utilizing complementary or quasi-complementary circuits
  • Driver stages in high-fidelity amplifiers and television circuits
  • Medium power linear and switching applications

Q & A

  1. What is the maximum collector-emitter voltage of the BD139G transistor?

    The maximum collector-emitter voltage (VCEO) of the BD139G transistor is 80 V.

  2. What is the maximum collector current of the BD139G transistor?

    The maximum collector current (IC) of the BD139G transistor is 1.5 A.

  3. What is the operating temperature range of the BD139G transistor?

    The operating temperature range of the BD139G transistor is -55°C to +150°C.

  4. What is the DC current gain (hFE) of the BD139G transistor?

    The DC current gain (hFE) of the BD139G transistor is 40 (Min) at IC = 0.15 A.

  5. Is the BD139G transistor Pb-Free and RoHS Compliant?

    Yes, the BD139G transistor is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

  6. What are the complementary PNP types for the BD139G transistor?

    The complementary PNP types for the BD139G transistor are BD136, BD138, and BD140.

  7. What is the package type of the BD139G transistor?

    The package type of the BD139G transistor is TO-225.

  8. What are the typical applications of the BD139G transistor?

    The BD139G transistor is typically used in audio amplifiers, driver stages in high-fidelity amplifiers, and medium power linear and switching applications.

  9. What is the transition frequency (ft) of the BD139G transistor?

    The transition frequency (ft) of the BD139G transistor is 50 MHz.

  10. What is the power dissipation of the BD139G transistor?

    The power dissipation (PD) of the BD139G transistor is 12.5 W.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:12.5 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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BD135G
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BD13510STU
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Similar Products

Part Number BD139G BD179G BD159G BD135G BD136G BD137G BD138G BD139
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Obsolete Obsolete Active Active Active Active Active
Transistor Type NPN NPN NPN NPN PNP NPN PNP NPN
Current - Collector (Ic) (Max) 1.5 A 3 A 500 mA 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 350 V 45 V 45 V 60 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 800mV @ 100mA, 1A - 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100µA (ICBO) 100µA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 63 @ 150mA, 2V 30 @ 50mA, 10V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 12.5 W 30 W 20 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - 3MHz - - - - - -
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 SOT-32-3

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