BD179G
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onsemi BD179G

Manufacturer No:
BD179G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 3A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD179G is a medium-power NPN epitaxial silicon transistor manufactured by ON Semiconductor. It is part of the BD175/177/179 series, which are designed for linear and switching applications. This transistor is known for its high current handling capabilities and is often used in various electronic circuits that require reliable and efficient performance.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 3 A
Collector Current (Pulse) ICP 7 A
Collector Dissipation PC 30 W
Junction Temperature TJ 150 °C
Storage Temperature TSTG -65 to 150 °C
DC Current Gain (hFE1) hFE1 100 ~ 250
Collector-Emitter Saturation Voltage VCE(sat) 0.8 V
Base-Emitter On Voltage VBE(on) 1.3 V
Current Gain Bandwidth Product fT 3 MHz

Key Features

  • High Current Handling: The BD179G can handle a maximum collector current of 3A (DC) and 7A (pulse), making it suitable for high-current applications.
  • Medium Power Capability: With a collector dissipation of 30W, this transistor is designed for medium-power linear and switching applications.
  • Wide Operating Temperature Range: It can operate within a junction temperature range of -65°C to 150°C, ensuring reliability in various environmental conditions.
  • Complementary Transistors: The BD179G is part of a series that includes complementary transistors (BD176/178/180), which can be used in push-pull amplifier configurations.
  • TO-126 Package: The transistor is packaged in a TO-126 case, which is widely used and recognized for its reliability and ease of mounting.

Applications

  • Linear Amplifiers: The BD179G is suitable for use in linear amplifier circuits where high current gain and medium power handling are required.
  • Switching Circuits: Its high current handling and fast switching times make it ideal for switching applications such as power supplies, motor control, and relay drivers.
  • Audio Amplifiers: It can be used in audio amplifier circuits due to its good current gain and low noise characteristics.
  • Industrial Control Systems: The transistor is often used in industrial control systems for driving high-current loads such as solenoids, relays, and small motors.

Q & A

  1. What is the maximum collector-emitter voltage of the BD179G?

    The maximum collector-emitter voltage (VCEO) of the BD179G is 80Vdc.

  2. What is the maximum collector current for the BD179G?

    The maximum collector current (IC) for the BD179G is 3A (DC) and 7A (pulse).

  3. What is the junction temperature range for the BD179G?

    The junction temperature range for the BD179G is -65°C to 150°C.

  4. What package type is the BD179G available in?

    The BD179G is available in the TO-126 package.

  5. What are some common applications of the BD179G?

    The BD179G is commonly used in linear amplifiers, switching circuits, audio amplifiers, and industrial control systems.

  6. Is the BD179G suitable for use in life support systems?

    No, the BD179G is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.

  7. What is the collector dissipation of the BD179G?

    The collector dissipation (PC) of the BD179G is 30W.

  8. What is the DC current gain (hFE) range for the BD179G?

    The DC current gain (hFE) range for the BD179G is 100 ~ 250.

  9. What is the base-emitter on voltage for the BD179G?

    The base-emitter on voltage (VBE(on)) for the BD179G is 1.3V.

  10. What is the current gain bandwidth product (fT) of the BD179G?

    The current gain bandwidth product (fT) of the BD179G is 3MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:800mV @ 100mA, 1A
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:30 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
BD179
BD179
TRANS NPN 80V 3A TO126

Similar Products

Part Number BD179G BD139G BD159G BD179
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 3 A 1.5 A 500 mA 3 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 350 V 80 V
Vce Saturation (Max) @ Ib, Ic 800mV @ 100mA, 1A 500mV @ 50mA, 500mA - 800mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100µA (ICBO) 100nA (ICBO) 100µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 40 @ 150mA, 2V 30 @ 50mA, 10V 63 @ 150mA, 2V
Power - Max 30 W 12.5 W 20 W 30 W
Frequency - Transition 3MHz - - 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126

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