Overview
The BD179 is a Plastic Medium-Power NPN Silicon Transistor manufactured by onsemi. This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits. It is part of the BD179/BD180 complementary pair, making it suitable for a wide range of applications requiring high DC current gain and low saturation voltage.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 80 | Vdc |
Collector-Base Voltage | VCBO | 80 | Vdc |
Emitter-Base Voltage | VEBO | 5.0 | Vdc |
Collector Current | IC | 3.0 | A |
Base Current | IB | 1.0 | A |
Total Power Dissipation | PD | 30 | W |
Operating and Storage Junction Temperature Range | TJ, Tstg | –65 to +150 | °C |
Thermal Resistance, Junction-to-Case | RJC | 4.16 | °C/W |
DC Current Gain (hFE) | hFE | 40 (Min) @ IC = 0.15 A, VCE = 2.0 V | - |
Collector-Emitter Saturation Voltage | VCE(sat) | 0.8 | Vdc |
Transition Frequency (ft) | ft | 3 MHz | - |
Key Features
- High DC Current Gain: The BD179 has a high DC current gain (hFE) with a minimum value of 40 at IC = 0.15 A and VCE = 2.0 V.
- Complementary Device: It is complementary with the BD180, making it suitable for use in complementary or quasi-complementary circuits.
- Pb-Free and RoHS Compliant: The BD179 is lead-free and compliant with the RoHS directive, ensuring environmental safety and regulatory compliance.
- Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage of 0.8 V, which is beneficial for reducing power consumption and heat generation.
- High-Speed Operation: The BD179 can operate at high speeds, making it suitable for applications requiring fast switching times.
- Wide Operating Temperature Range: It operates within a temperature range of –65°C to +150°C, making it versatile for various environments.
Applications
- Analog Signal Switching: The BD179 can be used to switch analog signals in applications such as audio amplifiers or data transmission systems.
- Digital Signal Amplification: It can amplify digital signals in applications like logic gates or digital-to-analog converters.
- Power Supply Regulation: The transistor can be used to regulate power supplies in various applications, such as DC-DC converters or voltage regulators.
- General Purpose Switching: It is suitable for general-purpose switching applications due to its high current handling and low saturation voltage.
Q & A
- Q: What is the maximum collector-emitter voltage of the BD179?
A: The maximum collector-emitter voltage (VCEO) of the BD179 is 80 Vdc. - Q: What is the maximum collector current of the BD179?
A: The maximum collector current (IC) of the BD179 is 3.0 A. - Q: Is the BD179 RoHS compliant?
A: Yes, the BD179 is Pb-Free and RoHS compliant. - Q: What is the transition frequency (ft) of the BD179?
A: The transition frequency (ft) of the BD179 is 3 MHz. - Q: What is the maximum operating temperature of the BD179?
A: The maximum operating temperature of the BD179 is 150°C. - Q: Can the BD179 be used in high-frequency applications?
A: Yes, the BD179 can operate at high frequencies and is suitable for applications requiring fast switching times). - Q: What is the collector-emitter saturation voltage of the BD179?
A: The collector-emitter saturation voltage (VCE(sat)) of the BD179 is 0.8 Vdc). - Q: What is the thermal resistance, junction-to-case (RJC) of the BD179?
A: The thermal resistance, junction-to-case (RJC) of the BD179 is 4.16 °C/W). - Q: What package type is the BD179 available in?
A: The BD179 is available in the TO-126 package type). - Q: What is the minimum DC current gain (hFE) of the BD179?
A: The minimum DC current gain (hFE) of the BD179 is 40 at IC = 0.15 A and VCE = 2.0 V).