BD179
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onsemi BD179

Manufacturer No:
BD179
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 3A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD179 is a Plastic Medium-Power NPN Silicon Transistor manufactured by onsemi. This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits. It is part of the BD179/BD180 complementary pair, making it suitable for a wide range of applications requiring high DC current gain and low saturation voltage.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 3.0 A
Base Current IB 1.0 A
Total Power Dissipation PD 30 W
Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 °C
Thermal Resistance, Junction-to-Case RJC 4.16 °C/W
DC Current Gain (hFE) hFE 40 (Min) @ IC = 0.15 A, VCE = 2.0 V -
Collector-Emitter Saturation Voltage VCE(sat) 0.8 Vdc
Transition Frequency (ft) ft 3 MHz -

Key Features

  • High DC Current Gain: The BD179 has a high DC current gain (hFE) with a minimum value of 40 at IC = 0.15 A and VCE = 2.0 V.
  • Complementary Device: It is complementary with the BD180, making it suitable for use in complementary or quasi-complementary circuits.
  • Pb-Free and RoHS Compliant: The BD179 is lead-free and compliant with the RoHS directive, ensuring environmental safety and regulatory compliance.
  • Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage of 0.8 V, which is beneficial for reducing power consumption and heat generation.
  • High-Speed Operation: The BD179 can operate at high speeds, making it suitable for applications requiring fast switching times.
  • Wide Operating Temperature Range: It operates within a temperature range of –65°C to +150°C, making it versatile for various environments.

Applications

  • Analog Signal Switching: The BD179 can be used to switch analog signals in applications such as audio amplifiers or data transmission systems.
  • Digital Signal Amplification: It can amplify digital signals in applications like logic gates or digital-to-analog converters.
  • Power Supply Regulation: The transistor can be used to regulate power supplies in various applications, such as DC-DC converters or voltage regulators.
  • General Purpose Switching: It is suitable for general-purpose switching applications due to its high current handling and low saturation voltage.

Q & A

  1. Q: What is the maximum collector-emitter voltage of the BD179?
    A: The maximum collector-emitter voltage (VCEO) of the BD179 is 80 Vdc.
  2. Q: What is the maximum collector current of the BD179?
    A: The maximum collector current (IC) of the BD179 is 3.0 A.
  3. Q: Is the BD179 RoHS compliant?
    A: Yes, the BD179 is Pb-Free and RoHS compliant.
  4. Q: What is the transition frequency (ft) of the BD179?
    A: The transition frequency (ft) of the BD179 is 3 MHz.
  5. Q: What is the maximum operating temperature of the BD179?
    A: The maximum operating temperature of the BD179 is 150°C.
  6. Q: Can the BD179 be used in high-frequency applications?
    A: Yes, the BD179 can operate at high frequencies and is suitable for applications requiring fast switching times).
  7. Q: What is the collector-emitter saturation voltage of the BD179?
    A: The collector-emitter saturation voltage (VCE(sat)) of the BD179 is 0.8 Vdc).
  8. Q: What is the thermal resistance, junction-to-case (RJC) of the BD179?
    A: The thermal resistance, junction-to-case (RJC) of the BD179 is 4.16 °C/W).
  9. Q: What package type is the BD179 available in?
    A: The BD179 is available in the TO-126 package type).
  10. Q: What is the minimum DC current gain (hFE) of the BD179?
    A: The minimum DC current gain (hFE) of the BD179 is 40 at IC = 0.15 A and VCE = 2.0 V).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:800mV @ 100mA, 1A
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:30 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
BD179
BD179
TRANS NPN 80V 3A TO126

Similar Products

Part Number BD179 BD179G BD139 BD159
Manufacturer onsemi onsemi STMicroelectronics onsemi
Product Status Obsolete Obsolete Active Obsolete
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A 1.5 A 500 mA
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 350 V
Vce Saturation (Max) @ Ib, Ic 800mV @ 100mA, 1A 800mV @ 100mA, 1A 500mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA (ICBO) 100nA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 40 @ 150mA, 2V 30 @ 50mA, 10V
Power - Max 30 W 30 W 1.25 W 20 W
Frequency - Transition 3MHz 3MHz - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 SOT-32-3 TO-126

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