PN2222AG
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onsemi PN2222AG

Manufacturer No:
PN2222AG
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 40V 0.6A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PN2222AG is an NPN epitaxial silicon transistor produced by onsemi. This general-purpose transistor is designed for use as a medium power amplifier and switch, capable of handling collector currents up to 500mA. It is available in various package types, including TO-92 and SOT-89, making it versatile for different application needs.

Key Specifications

Parameter Symbol Ratings Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA
Total Device Dissipation (TO-92) PC 625 mW
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
DC Current Gain (IC=150mA, VCE=10V) hFE 100
Collector-Emitter Saturation Voltage (IC=500mA, IB=50mA) VCE(SAT) 1.0 V
Base-Emitter Saturation Voltage (IC=500mA, IB=50mA) VBE(SAT) 2.0 V
Transition Frequency (fT) fT 300 MHz

Key Features

  • General Purpose Amplifier and Switch: Suitable for medium power amplifier and switching applications.
  • High Current Capability: Can handle collector currents up to 500mA.
  • Versatile Packaging: Available in TO-92 and SOT-89 packages.
  • High DC Current Gain: hFE ranges from 35 to 300 depending on the collector current.
  • Low Saturation Voltages: VCE(SAT) and VBE(SAT) are 1.0V and 2.0V respectively at high currents.
  • High Transition Frequency: fT of 300 MHz, suitable for high-frequency applications.

Applications

  • General Purpose Amplification: Used in various amplifier circuits requiring medium power handling.
  • Switching Circuits: Suitable for switching applications where high current and low saturation voltages are necessary.
  • Automotive Electronics: Can be used in automotive systems due to its robust specifications and temperature range.
  • Industrial Control Systems: Applicable in industrial control circuits requiring reliable and efficient switching and amplification.

Q & A

  1. What is the maximum collector current of the PN2222AG transistor?

    The maximum collector current (IC) of the PN2222AG transistor is 600 mA.

  2. What are the typical package types available for the PN2222AG?

    The PN2222AG is available in TO-92 and SOT-89 packages.

  3. What is the maximum junction temperature for the PN2222AG?

    The maximum junction temperature (TJ) is +150°C.

  4. What is the DC current gain (hFE) of the PN2222AG at IC=150mA?

    The DC current gain (hFE) at IC=150mA is typically 100.

  5. What is the collector-emitter saturation voltage (VCE(SAT)) at IC=500mA?

    The collector-emitter saturation voltage (VCE(SAT)) at IC=500mA is typically 1.0V.

  6. What is the transition frequency (fT) of the PN2222AG?

    The transition frequency (fT) is 300 MHz.

  7. Is the PN2222AG suitable for high-frequency applications?

    Yes, with a transition frequency of 300 MHz, it is suitable for high-frequency applications.

  8. Can the PN2222AG be used in automotive electronics?

    Yes, it can be used in automotive systems due to its robust specifications and temperature range.

  9. What is the storage temperature range for the PN2222AG?

    The storage temperature range (TSTG) is -55°C to +150°C.

  10. Is the PN2222AG lead-free and halogen-free?

    Yes, the PN2222AG is available in lead-free and halogen-free versions.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:625 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body
Supplier Device Package:TO-92 (TO-226)
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Similar Products

Part Number PN2222AG PN2222G PN2222A
Manufacturer onsemi onsemi NTE Electronics, Inc
Product Status Obsolete Obsolete Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 30 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1.6V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 625 mW 625 mW 500 mW
Frequency - Transition 300MHz 250MHz 270MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) TO-92-3

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