BD135G
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onsemi BD135G

Manufacturer No:
BD135G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 45V 1.5A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD135G is a plastic, medium-power silicon NPN bipolar junction transistor produced by onsemi. This transistor is designed for use in audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits. It is part of a series that includes the BD135G, BD137G, and BD139G, which are complementary to the BD136, BD138, and BD140 series. The BD135G is known for its high DC current gain and is suitable for various power supply and amplifier applications.

Key Specifications

RatingSymbolValueUnit
Collector-Emitter VoltageVCEO45Vdc
Collector-Base VoltageVCBO45Vdc
Emitter-Base VoltageVEBO5.0Vdc
Collector CurrentIC1.5Adc
Base CurrentIB0.5Adc
Total Device Dissipation @ TA = 25°CPD1.25Watts
Total Device Dissipation @ TC = 25°CPD12.5Watts
Operating and Storage Junction Temperature RangeTJ, Tstg–55 to +150°C
Thermal Resistance, Junction-to-CaseRJC10°C/W
Thermal Resistance, Junction-to-AmbientRJA100°C/W
DC Current Gain (hFE) @ IC = 0.15 A, VCE = 2 VhFE40 - 250
Collector-Emitter Saturation Voltage @ IC = 0.5 A, IB = 0.05 AVCE(sat)0.5Vdc
Base-Emitter On Voltage @ IC = 0.5 A, VCE = 2.0 VVBE(on)1Vdc

Key Features

  • High DC current gain
  • Complementary with BD136, BD138, and BD140 series
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
  • Designed for use in audio amplifiers and drivers utilizing complementary or quasi-complementary circuits
  • Maximum collector current of 1.5 A and maximum collector-emitter voltage of 45 V
  • Thermal resistance of 10 °C/W (Junction-to-Case) and 100 °C/W (Junction-to-Ambient)

Applications

The BD135G transistor is primarily used in audio amplifiers and drivers. It is also suitable for various power supply applications and other general-purpose amplifier circuits. Its high DC current gain and robust thermal characteristics make it a reliable choice for medium-power electronic systems.

Q & A

  1. What is the maximum collector-emitter voltage of the BD135G transistor?
    The maximum collector-emitter voltage (VCEO) of the BD135G transistor is 45 Vdc.
  2. What is the maximum collector current of the BD135G transistor?
    The maximum collector current (IC) of the BD135G transistor is 1.5 Adc.
  3. Is the BD135G transistor RoHS compliant?
    Yes, the BD135G transistor is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  4. What is the operating temperature range of the BD135G transistor?
    The operating and storage junction temperature range of the BD135G transistor is –55 to +150 °C.
  5. What is the thermal resistance of the BD135G transistor?
    The thermal resistance of the BD135G transistor is 10 °C/W (Junction-to-Case) and 100 °C/W (Junction-to-Ambient).
  6. What are the typical applications of the BD135G transistor?
    The BD135G transistor is typically used in audio amplifiers, drivers, and various power supply applications.
  7. Is the BD135G transistor suitable for high-frequency applications?
    The BD135G is generally used for medium-power applications and may not be the best choice for high-frequency applications due to its characteristics as a general-purpose transistor.
  8. Can the BD135G transistor be used in life support systems or medical devices?
    No, the BD135G transistor is not designed or intended for use as a critical component in life support systems or any FDA Class 3 medical devices.
  9. What is the package type of the BD135G transistor?
    The BD135G transistor is packaged in a TO-225AA (TO-225) case.
  10. Is the BD135G transistor still in production?
    The BD135G transistor is active and available for purchase, although the BD135 (without the 'G' suffix) is listed as obsolete.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
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BD135
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BD137G
BD137G
TRANS NPN 60V 1.5A TO126
BD135G
BD135G
TRANS NPN 45V 1.5A TO126
BD13510STU
BD13510STU
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BD137
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Similar Products

Part Number BD135G BD139G BD138G BD135TG BD137G BD136G BD135
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Active Active Active Active Active
Transistor Type NPN NPN PNP NPN NPN PNP NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 45 V 80 V 60 V 45 V 60 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 1.25 W 12.5 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 SOT-32-3

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