BD135TG
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onsemi BD135TG

Manufacturer No:
BD135TG
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 45V 1.5A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD135TG is a plastic, medium-power silicon NPN transistor produced by onsemi. This transistor is part of a series that includes the BD135G, BD137G, and BD139G, designed for use in audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The BD135TG is housed in a TO-225 package and is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 45 Vdc
Collector-Base Voltage VCBO 45 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 1.5 Adc
Base Current IB 0.5 Adc
Total Device Dissipation @ TA = 25°C PD 1.25 Watts
Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C
Thermal Resistance, Junction-to-Case RJC 10 °C/W
Thermal Resistance, Junction-to-Ambient RJA 100 °C/W
DC Current Gain (hFE) @ IC = 0.15 A, VCE = 2 V hFE 40
Collector-Emitter Saturation Voltage @ IC = 0.5 A, IB = 0.05 A VCE(sat) 0.5 Vdc
Base-Emitter On Voltage @ IC = 0.5 A, VCE = 2.0 V VBE(on) 1 Vdc

Key Features

  • High DC Current Gain
  • Complementary with BD136, BD138, BD140
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
  • Designed for use in audio amplifiers and drivers
  • Medium-power silicon NPN transistor
  • Low collector-emitter saturation voltage (VCE(sat))
  • High thermal stability

Applications

  • Audio amplifiers
  • Drivers utilizing complementary or quasi-complementary circuits
  • General-purpose amplifier applications
  • Power supplies

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BD135TG?

    The collector-emitter voltage (VCEO) of the BD135TG is 45 Vdc.

  2. What is the maximum collector current (IC) of the BD135TG?

    The maximum collector current (IC) of the BD135TG is 1.5 Adc.

  3. Is the BD135TG Pb-Free and RoHS Compliant?
  4. What is the thermal resistance, junction-to-case (RJC) of the BD135TG?

    The thermal resistance, junction-to-case (RJC) of the BD135TG is 10 °C/W.

  5. What is the DC current gain (hFE) of the BD135TG at IC = 0.15 A and VCE = 2 V?

    The DC current gain (hFE) of the BD135TG at IC = 0.15 A and VCE = 2 V is 40..

  6. What are the typical applications of the BD135TG?

    The BD135TG is typically used in audio amplifiers, drivers utilizing complementary or quasi-complementary circuits, and general-purpose amplifier applications.

  7. What is the collector-emitter saturation voltage (VCE(sat)) of the BD135TG?

    The collector-emitter saturation voltage (VCE(sat)) of the BD135TG is 0.5 Vdc at IC = 0.5 A and IB = 0.05 A..

  8. What is the base-emitter on voltage (VBE(on)) of the BD135TG?

    The base-emitter on voltage (VBE(on)) of the BD135TG is 1 Vdc at IC = 0.5 A and VCE = 2.0 V..

  9. What is the operating and storage junction temperature range of the BD135TG?

    The operating and storage junction temperature range of the BD135TG is –55 to +150 °C..

  10. Is the BD135TG still in production?

    The BD135TG is marked as having last shipments, indicating it is no longer in active production..

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
BD139G
BD139G
TRANS NPN 80V 1.5A TO126
BD135
BD135
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BD137G
BD137G
TRANS NPN 60V 1.5A TO126
BD135G
BD135G
TRANS NPN 45V 1.5A TO126
BD13510STU
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BD137
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Similar Products

Part Number BD135TG BD135G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 1.25 W 1.25 W
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126

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