Overview
The PBSS5160T,215 is a high-performance PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed to operate in a variety of applications requiring high efficiency and reliability. It is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for space-constrained designs. The PBSS5160T,215 is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 330 mV @ 100 mA, 1 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500 mA, 5 V |
| Power - Max | 400 mW |
| Frequency - Transition | 220 MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Key Features
- Low Collector-Emitter Saturation Voltage (VCEsat): The PBSS5160T,215 features a low VCEsat, which enhances efficiency by reducing heat generation.
- High Collector Current Capability: It has a high collector current capability (IC and ICM), making it suitable for applications requiring significant current handling.
- High Efficiency: The transistor is designed for high efficiency, which is beneficial in reducing heat and improving overall system performance.
- Cost-Effective Replacement: It serves as a cost-effective replacement for medium power transistors such as BCP52 and BCX52.
- AEC-Q101 Qualified: The PBSS5160T,215 is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.
Applications
- Automotive: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Telecom Infrastructure: Used in telecom infrastructure for its high reliability and performance.
- Industrial: Applicable in industrial settings for power management, DC-DC conversion, and supply line switching).
- Power Management: Ideal for power management applications, including DC-DC conversion and peripheral driver functions).
Q & A
- What is the maximum collector-emitter breakdown voltage of the PBSS5160T,215?
The maximum collector-emitter breakdown voltage is 60 V.
- What is the maximum collector current of the PBSS5160T,215?
The maximum collector current is 1 A).
- What is the typical VCEsat of the PBSS5160T,215?
The typical VCEsat is 330 mV @ 100 mA, 1 A).
- What is the operating temperature range of the PBSS5160T,215?
The operating temperature range is up to 150°C (TJ)).
- Is the PBSS5160T,215 AEC-Q101 qualified?
Yes, the PBSS5160T,215 is AEC-Q101 qualified).
- What package types are available for the PBSS5160T,215?
The transistor is available in TO-236-3, SC-59, and SOT-23-3 packages).
- What are some typical applications of the PBSS5160T,215?
Typical applications include automotive, telecom infrastructure, industrial, and power management).
- What is the transition frequency of the PBSS5160T,215?
The transition frequency is 220 MHz).
- Is the PBSS5160T,215 a surface-mount device?
Yes, it is a surface-mount device (SMD)).
- What is the power dissipation of the PBSS5160T,215?
The maximum power dissipation is 400 mW).
