PBSS4160T,215
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Nexperia USA Inc. PBSS4160T,215

Manufacturer No:
PBSS4160T,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS4160T,215 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for a variety of applications, including switching and digital circuits, where low power losses and high efficiency are crucial. The device is part of Nexperia's extensive portfolio of discrete semiconductor products, known for their reliability and compliance with industry standards.

Key Specifications

Parameter Value
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 250 mV @ 100 mA, 1 A
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500 mA, 5 V
Power - Max 400 mW
Frequency - Transition 220 MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Key Features

  • Low Vce(sat) for reduced power losses and increased efficiency.
  • High collector current of up to 1 A and collector-emitter voltage of up to 60 V.
  • Compact SOT-23 package, suitable for surface mount applications.
  • High transition frequency of 220 MHz, making it suitable for high-speed switching applications.
  • RoHS compliant, ensuring environmental friendliness.
  • Automotive qualified, suitable for use in automotive electronics.

Applications

  • Switching and digital circuits where low power losses and high efficiency are required.
  • Automotive electronics, including e-mobility solutions and other vehicle systems.
  • Industrial applications such as motor drives, power supplies, and control circuits.
  • Consumer electronics requiring reliable and efficient transistor performance.

Q & A

  1. What is the maximum collector current of the PBSS4160T,215 transistor?

    The maximum collector current is 1 A.

  2. What is the maximum collector-emitter voltage of the PBSS4160T,215 transistor?

    The maximum collector-emitter voltage is 60 V.

  3. What is the typical Vce(sat) of the PBSS4160T,215 transistor?

    The typical Vce(sat) is 250 mV at 100 mA and 1 A.

  4. What is the operating temperature range of the PBSS4160T,215 transistor?

    The operating temperature range is up to 150°C (TJ).

  5. Is the PBSS4160T,215 transistor RoHS compliant?
  6. What are the common applications of the PBSS4160T,215 transistor?
  7. What is the package type of the PBSS4160T,215 transistor?

    The transistor is available in TO-236-3, SC-59, and SOT-23-3 packages.

  8. What is the transition frequency of the PBSS4160T,215 transistor?

    The transition frequency is 220 MHz.

  9. Is the PBSS4160T,215 transistor suitable for automotive use?
  10. Where can I find detailed specifications and datasheets for the PBSS4160T,215 transistor?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 5V
Power - Max:400 mW
Frequency - Transition:220MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Same Series
PBSS4160TVL
PBSS4160TVL
TRANS NPN 60V 1A TO236AB

Similar Products

Part Number PBSS4160T,215 PBSS5160T,215 PBSS4120T,215 PBSS4130T,215 PBSS4140T,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Transistor Type NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 20 V 30 V 40 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 100mA, 1A 330mV @ 100mA, 1A 250mV @ 50mA, 1A 270mV @ 50mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA 100nA 100nA (ICBO) 100nA (ICBO) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 5V 150 @ 500mA, 5V 300 @ 500mA, 2V 300 @ 500mA, 2V 300 @ 500mA, 5V
Power - Max 400 mW 400 mW 480 mW 480 mW 450 mW
Frequency - Transition 220MHz 220MHz 100MHz 100MHz 150MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB

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