PBSS5140T,215
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Nexperia USA Inc. PBSS5140T,215

Manufacturer No:
PBSS5140T,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 40V 1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS5140T,215 is a 40 V, 1 A PNP low VCEsat transistor manufactured by Nexperia USA Inc. This transistor is housed in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. It is designed for general-purpose switching and muting applications, offering high efficiency due to its low collector-emitter saturation voltage (VCEsat) and high collector current capability. The device is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

Parameter Value Unit
Type PNP -
Collector-Emitter Breakdown Voltage (VCEO) 40 V
Collector-Emitter Saturation Voltage (VCEsat) 500 mV @ 100 mA, 1 A mV
Collector Current (IC) 1 A
DC Current Gain (hFE) 300 - 800 @ 100 mA, 5 V -
Power Dissipation (Pd) 300 mW mW
Transition Frequency (fT) 150 MHz MHz
Junction Temperature (TJ) 150 °C °C
Package SOT23 (TO-236AB) -

Key Features

  • Low collector-emitter saturation voltage (VCEsat) of 500 mV, ensuring high efficiency and less heat generation.
  • High collector current capability of 1 A and high collector current gain (hFE) at high IC.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Surface-mount SOT23 package, ideal for compact designs.
  • Transition frequency of 150 MHz, suitable for high-frequency applications.

Applications

  • General-purpose switching and muting.
  • LCD backlighting.
  • Supply line switching circuits.
  • Battery-driven equipment such as mobile phones, video cameras, and handheld devices.

Q & A

  1. What is the collector-emitter breakdown voltage of the PBSS5140T,215 transistor?

    The collector-emitter breakdown voltage (VCEO) is 40 V.

  2. What is the collector-emitter saturation voltage (VCEsat) of this transistor?

    The VCEsat is 500 mV at 100 mA and 1 A.

  3. What is the maximum collector current (IC) of the PBSS5140T,215?

    The maximum collector current is 1 A.

  4. What is the DC current gain (hFE) of this transistor?

    The DC current gain (hFE) is between 300 and 800 at 100 mA and 5 V.

  5. What is the power dissipation (Pd) of the PBSS5140T,215?

    The power dissipation is 300 mW.

  6. What is the transition frequency (fT) of this transistor?

    The transition frequency is 150 MHz.

  7. What is the junction temperature (TJ) of the PBSS5140T,215?

    The junction temperature is 150 °C.

  8. In what package is the PBSS5140T,215 available?

    The transistor is available in a SOT23 (TO-236AB) package.

  9. Is the PBSS5140T,215 AEC-Q101 qualified?

    Yes, the PBSS5140T,215 is AEC-Q101 qualified.

  10. What are some common applications of the PBSS5140T,215 transistor?

    Common applications include general-purpose switching and muting, LCD backlighting, supply line switching circuits, and battery-driven equipment.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 100mA, 5V
Power - Max:450 mW
Frequency - Transition:150MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Same Series
PBSS5140T/ZLR
PBSS5140T/ZLR
TRANS PNP 40V 1A TO236AB

Similar Products

Part Number PBSS5140T,215 PBSS5240T,215 PBSS5160T,215 PBSS4140T,215 PBSS5120T,215 PBSS5130T,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
Transistor Type PNP PNP PNP NPN PNP PNP
Current - Collector (Ic) (Max) 1 A 2 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 60 V 40 V 20 V 30 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 350mV @ 200mA, 2A 330mV @ 100mA, 1A 500mV @ 100mA, 1A 250mV @ 50mA, 1A 225mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA 100nA (ICBO) 100nA 100nA 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA, 5V 210 @ 1A, 2V 150 @ 500mA, 5V 300 @ 500mA, 5V 250 @ 500mA, 2V 260 @ 500mA, 2V
Power - Max 450 mW 480 mW 400 mW 450 mW 480 mW 480 mW
Frequency - Transition 150MHz 200MHz 220MHz 150MHz 100MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB

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