Overview
The PBSS5140T,215 is a 40 V, 1 A PNP low VCEsat transistor manufactured by Nexperia USA Inc. This transistor is housed in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. It is designed for general-purpose switching and muting applications, offering high efficiency due to its low collector-emitter saturation voltage (VCEsat) and high collector current capability. The device is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | PNP | - |
| Collector-Emitter Breakdown Voltage (VCEO) | 40 | V |
| Collector-Emitter Saturation Voltage (VCEsat) | 500 mV @ 100 mA, 1 A | mV |
| Collector Current (IC) | 1 | A |
| DC Current Gain (hFE) | 300 - 800 @ 100 mA, 5 V | - |
| Power Dissipation (Pd) | 300 mW | mW |
| Transition Frequency (fT) | 150 MHz | MHz |
| Junction Temperature (TJ) | 150 °C | °C |
| Package | SOT23 (TO-236AB) | - |
Key Features
- Low collector-emitter saturation voltage (VCEsat) of 500 mV, ensuring high efficiency and less heat generation.
- High collector current capability of 1 A and high collector current gain (hFE) at high IC.
- AEC-Q101 qualified, making it suitable for automotive applications.
- Surface-mount SOT23 package, ideal for compact designs.
- Transition frequency of 150 MHz, suitable for high-frequency applications.
Applications
- General-purpose switching and muting.
- LCD backlighting.
- Supply line switching circuits.
- Battery-driven equipment such as mobile phones, video cameras, and handheld devices.
Q & A
- What is the collector-emitter breakdown voltage of the PBSS5140T,215 transistor?
The collector-emitter breakdown voltage (VCEO) is 40 V.
- What is the collector-emitter saturation voltage (VCEsat) of this transistor?
The VCEsat is 500 mV at 100 mA and 1 A.
- What is the maximum collector current (IC) of the PBSS5140T,215?
The maximum collector current is 1 A.
- What is the DC current gain (hFE) of this transistor?
The DC current gain (hFE) is between 300 and 800 at 100 mA and 5 V.
- What is the power dissipation (Pd) of the PBSS5140T,215?
The power dissipation is 300 mW.
- What is the transition frequency (fT) of this transistor?
The transition frequency is 150 MHz.
- What is the junction temperature (TJ) of the PBSS5140T,215?
The junction temperature is 150 °C.
- In what package is the PBSS5140T,215 available?
The transistor is available in a SOT23 (TO-236AB) package.
- Is the PBSS5140T,215 AEC-Q101 qualified?
Yes, the PBSS5140T,215 is AEC-Q101 qualified.
- What are some common applications of the PBSS5140T,215 transistor?
Common applications include general-purpose switching and muting, LCD backlighting, supply line switching circuits, and battery-driven equipment.
