BCP53-10T115
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NXP USA Inc. BCP53-10T115

Manufacturer No:
BCP53-10T115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
TRANS PNP 80V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP53-10T115 is a high-performance PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc., which is a successor to NXP Semiconductors. This transistor is part of the BCP53 series, known for its reliability and robust performance in various automotive and industrial applications.

It is designed to meet the stringent requirements of the automotive industry, complying with the AEC-Q101 standard. The BCP53-10T115 is packaged in a SOT-223 case, making it suitable for surface mount technology (SMT) and offering a compact solution for space-constrained designs.

Key Specifications

Product Attribute Attribute Value
Manufacturer Nexperia
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transistor Type PNP
Supplier Device Package SOT-223
Series Automotive, AEC-Q101
Power - Max 1.8 W
Package / Case TO-261-4, TO-261AA
Operating Temperature -65°C to 150°C (TJ)
Mounting Type Surface Mount
Frequency - Transition 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 1 A
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Key Features

  • High Collector-Emitter Voltage: Up to 80 V, making it suitable for high-voltage applications.
  • High Current Capability: Maximum collector current of 1 A and peak collector current of up to 3 A for short pulses.
  • Low Vce Saturation: 500 mV at 50 mA and 500 mA, ensuring efficient operation.
  • High Transition Frequency: 100 MHz, suitable for high-frequency applications.
  • AEC-Q101 Qualified: Meets the stringent requirements of the automotive industry.
  • Surface Mount Package: SOT-223 package for easy integration into SMT designs.
  • Wide Operating Temperature Range: From -65°C to 150°C, ensuring reliability in various environmental conditions.

Applications

  • Automotive Systems: Suitable for use in automotive electronics due to its AEC-Q101 qualification.
  • Industrial Control Systems: Used in various industrial control applications requiring high reliability and performance.
  • Power Management: Can be used in power management circuits due to its high current and voltage handling capabilities.
  • Audio and Signal Amplification: Suitable for audio and signal amplification applications requiring high fidelity and low distortion.

Q & A

  1. What is the maximum collector-emitter voltage of the BCP53-10T115 transistor?

    The maximum collector-emitter voltage is 80 V.

  2. What is the maximum collector current of the BCP53-10T115 transistor?

    The maximum collector current is 1 A.

  3. What is the transition frequency of the BCP53-10T115 transistor?

    The transition frequency is 100 MHz.

  4. Is the BCP53-10T115 transistor RoHS compliant?

    Yes, the BCP53-10T115 is ROHS3 compliant.

  5. What is the operating temperature range of the BCP53-10T115 transistor?

    The operating temperature range is from -65°C to 150°C.

  6. What type of package does the BCP53-10T115 transistor use?

    The transistor is packaged in a SOT-223 case.

  7. Is the BCP53-10T115 transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  8. What is the maximum power dissipation of the BCP53-10T115 transistor?

    The maximum power dissipation is 1.8 W.

  9. What is the DC current gain (hFE) of the BCP53-10T115 transistor?

    The DC current gain (hFE) is 63 at 150 mA and 2 V.

  10. What is the collector-emitter saturation voltage of the BCP53-10T115 transistor?

    The collector-emitter saturation voltage is 500 mV at 50 mA and 500 mA.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:600 mW
Frequency - Transition:140MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP53-10T115 BCP53-10,115 BCP53-10T,115
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 600 mW 1 W 600 mW
Frequency - Transition 140MHz 145MHz 140MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223

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