Overview
The BCP53-10,115 is a single PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for various automotive and industrial applications, offering high reliability and robust performance.
It features a high power handling capability of up to 1 W and a high collector-emitter breakdown voltage of 80 V, making it suitable for demanding environments. The transistor is AEC-Q100 qualified, ensuring its suitability for automotive applications, and has a wide operating temperature range up to 150°C.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-Emitter Voltage) | Open base | - | - | 80 | V |
| IC (Collector Current) | - | - | - | 1 | A |
| ICM (Peak Collector Current) | Single pulse; tp ≤ 1 ms | - | - | 2 | A |
| Vce Saturation | IC = -500 mA; IB = -50 mA | - | - | 0.5 | V |
| DC Current Gain (hFE) | VCE = -2 V; IC = -150 mA | 63 | - | 160 | - |
| Frequency Transition (fT) | VCE = -5 V; IC = -50 mA; f = 100 MHz | - | - | 145 | MHz |
| Power Max | - | - | - | 1 | W |
| Operating Temperature | - | - | - | 150 | °C |
| Collector-Base Cut-off Current (ICBO) | VCB = -30 V; IE = 0 A | - | - | 100 nA | - |
| Transistor Type | - | - | - | PNP | - |
| Package | - | - | - | SOT223 (SC-73) | - |
Key Features
- High power handling up to 1 W
- High collector-emitter breakdown voltage of 80 V
- High collector current capability of 1 A
- Low collector-emitter saturation voltage of 500 mV @ 500 mA
- High DC current gain of 63 @ 150 mA, 2 V
- High transition frequency of 145 MHz
- AEC-Q100 qualified for automotive applications
- Wide operating temperature range up to 150°C
- Robust design for high-reliability applications
- Suitable for high-speed switching and amplification
Applications
- Linear voltage regulators
- High-side switches
- Battery-driven devices
- Power management
- MOSFET drivers
- Amplifiers
Q & A
- What is the maximum collector-emitter breakdown voltage of the BCP53-10,115 transistor?
The maximum collector-emitter breakdown voltage is 80 V.
- What is the maximum collector current of the BCP53-10,115 transistor?
The maximum collector current is 1 A.
- What is the DC current gain of the BCP53-10,115 transistor at 150 mA and 2 V?
The DC current gain (hFE) is 63 at 150 mA and 2 V.
- What is the transition frequency of the BCP53-10,115 transistor?
The transition frequency is 145 MHz.
- Is the BCP53-10,115 transistor AEC-Q100 qualified?
Yes, the BCP53-10,115 transistor is AEC-Q100 qualified for automotive applications.
- What is the maximum operating temperature of the BCP53-10,115 transistor?
The maximum operating temperature is 150°C.
- What package type is the BCP53-10,115 transistor available in?
The transistor is available in the SOT223 (SC-73) package.
- What are some common applications of the BCP53-10,115 transistor?
Common applications include linear voltage regulators, high-side switches, battery-driven devices, power management, MOSFET drivers, and amplifiers.
- Is the BCP53-10,115 transistor RoHS compliant?
Yes, the BCP53-10,115 transistor is RoHS compliant.
- What is the collector-emitter saturation voltage of the BCP53-10,115 transistor?
The collector-emitter saturation voltage is 500 mV @ 500 mA.
